Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Self-organized dot patterns have been fabricated on GaSb and Si surfaces by sputtering from an inductively coupled plasma. The dependence of the patterns on the ion energy has been investigated. In agreement with previous studies using plasmas or Kaufman sources, the dot wavelength on GaSb increases with energy. On Si surfaces, however, the dot wavelength increases with energy only in the range E < 800 eV. For 800 eV < E < 1500 eV, the dot wavelength is constant.