Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationDefect Production and Evolution During and After Ion Implantation Studied by a Combination of Time-Ordered BCA and MD Simulations
Posselt, M.
Abstract
A novel method is applied to investigate the as-implanted defect structure formed during keV implantation into Si. It uses a combination of time-ordered computer simulations based on the binary collision approximation (BCA) and classical molecular dynamics (MD) simulations.The as-implanted damage created in 30 keV P+, 15 keV As+, and 15 keV B+ implants is analyzed and depth profiles of different defect species are given.
-
Lecture (Conference)
12th International Conference on Ion Implantation Technology, June 22-26, 1998, Kyoto/Japan
Permalink: https://www.hzdr.de/publications/Publ-1232