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2 PublicationsIon implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas
Pécz, B.; Stoemenos, J.; Voelskow, M.; Skorupa, W.; Dobos, L.; Pongrácz, A.; Battistig, G.
Abstract
Silicon carbide with its hexagonal and cubic polytypes is one of the wide band-gap semiconductors used for high temperature applications. Obviously the growth of cubic SiC on Si would be very advantageous, because very large, high quality substrates would then be available at relatively low cost.
Keywords: 3C-SiC formation of carbide; ion implantation; annealing in CO
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Contribution to proceedings
16th International Conference on Microscopy of Semiconducting Materials, 17.03.2009, Oxford, United Kingdom
Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas -
Journal of Physics: Conference Series 209(2010), 012045-1-012045-2
DOI: 10.1088/1742-6596/209/1/012045
Cited 1 times in Scopus
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