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1 PublicationElectroluminescence, charge trapping and quenching in Eu implantes SiO2-Si structures
Tyagulskiy, S.; Tyagulskyy, I.; Nazarov, A.; Lysenko, V.; Rebohle, L.; Lehmann, J.; Skorupa, W.
Abstract
This paper reports an analysis of the electroluminescence (EL) spectra changing, charge trapping and EL quenching during operation of the multicolor Eu implanted metal-oxide-silicon light-emitting devices (MOSLEDs). The nature of the changing of the light-emitting color in the MOSLED is discussed. It is shown that the EL life time of the Eu implanted MOSLED is considerably longer than that of high-efficiency MOSLEDs with Tb and Ge implanted oxide. It is demonstrated that a reduced EL intensity, enhanced negative charge trapping and a good EL stability are associated with enhanced clustering in the Eu implanted oxide during high-temperature furnace annealing. The comparison with the operation of the MOSLED fabricated by using the flash lamp annealing technique is performed.
Keywords: Silicon dioxide; Europium; Electroluminescence
- Microelectronic Engineering 86(2009)7-9, 1954-1956
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