Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationEpitaxial lateral overgrowth of amorphous CVD silicon films induced by ion irradiation
Voelskow, M.; Skorupa, W.; Wollschlaeger, K.; Matthaei, J.; Knothe, P.; Heinig, K.-H.
Abstract
Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates partly covered with silicon dioxide to produce SOl structures were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400 C after preamorphisation of the transition region layer/substrate. The implantation with a dose of 5E17 cm-2 into the wafers with SOl structure resulted in a 1.5 um wide overgrown crystalline layer.
Keywords: CVD; epitaxy; ion irradiation
- Applied Surface Science 43(1989)1-4, 196-199
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