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1 PublicationThe importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
Zhou, S.; Bürger, D.; Skorupa, W.; Oesterlin, P.; Helm, M.; Schmidt, H.
Abstract
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 1018 to 2.1$\times$1020 cm-3, the latter being the highest reported so far. Based on the magneto-transport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.
Keywords: Diluted magnetic semiconductor; Ge; ion implantation
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Applied Physics Letters 96(2010), 202105
DOI: 10.1063/1.3428770
Cited 19 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-14023