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Secondary Electron Emission from Surfaces during Focused Ion Beam Irradiation

Bischoff, L.; Böttger, R.

Abstract

Scanning ion microscopy (SIM) based on secondary electron (SE) imaging initiated by focused ion beam (FIB) irradiation of surfaces can yield important information about the topography, the material changes or crystallographic orientations of a specimen. Compared to a scanning electron microscope (SEM) based on a similar principle the information comes from a very near surface region due to the small penetration depth of the ions. A disadvantage of the SIM is the lower spatial resolution and the fact that energetic ions damage the surface during imaging by implantation and sputtering processes.
The aim of this work is to investigate the behavior of a mass-separated FIB working with a bismuth liquid metal ion source which emits a broad spectrum of single and double charged monomers as well as cluster ions in the frame of the examination of the self-organization of nano-pattern on surfaces under heavy ion erosion [3]. The study of all interactions of the primary beam within the surface and the knowledge of the fundamental parameters leads to a more correct interpretation of the secondary electron images.

Keywords: FIB; secondary electron emission; work function

Involved research facilities

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  • Lecture (Conference)
    Nanoscale pattern formation at surfaces, 18.-22.09.2011, El Escorial, Spain

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