Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
2 PublicationsIon beam synthesis of narrow Ge nanocluster bands in thin SiO2 films
von Borany, J.; Heinig, K.-H.; Grötzschel, R.; Klimenkov, M.; Strobel, M.; Stegemann, K.-H.; Thees, H.-J.
Abstract
This paper reports on self-organization of narrow bands of Ge nanoclusters in thin thermally grown SiO2 layers by means of ion beam synthesis. Although the implanted Ge profile is distributed over almost the whole SiO2, a delta-like nanocluster band very close to, but well separated from the Si/SiO2 interface is formed under specific implantation and annealing conditions. The evolution of this band can be explained by a model taking into account collisional ion beam mixing and reactions near the Si/SiO2 interface, which describes in good agreement the experimental results. The reliable fabrication of such cluster bands are the basis for new memory applications.
Keywords: ion beam synthesis; thin SiO2 films; nanocluster; self-organisation; non-volatile memories
- Microelectronic Engineering 48 (1999) 231-234
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Lecture (Conference)
Insulating Films on Semiconductors,INFOS'99, Kloster Ban7, Germany, June 16-19,1999
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