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1 PublicationAn Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functions
You, T.; Selvaraj, L. P.; Zeng, H.; Luo, W.; Du, N.; Buerger, D.; Skorupa, I.; Prucnal, S.; Lawerenz, A.; Mikolajick, T.; Schmidt, O. G.; Schmidt, H.
Abstract
A capacitive switching behavior is observed in a Si 3 N 4 /p-Si-based metal–insulator–semiconductor (MIS) structure due to the electron tunneling at the Si 3 N 4 /p-Si interface. A BiFeO 3 (BFO) layer is deposited on Si 3 N 4 /p-Si by pulsed laser deposition technique to obtain the memcapacitive effect as the distribution of positive charges in the Si 3 N 4 layer can be stabilized by the polarization charge of the ferroelectric BFO coating layer. The capacitive switching behavior of the Al/BFO/Si 3 N 4 /p-Si/Au MIS structure is also sensitive to both intensity and wavelength of the illumination, which offers the possibility to create a photodetector for both intensity and color detection. Thus, the presented device has the potential application for future information storage and visible light communications. As an example, a photocapacitive demodulator with capability of decoding both wavelength and intensity information of the incident light is demonstrated.
Keywords: analog resistive switch; flexible barrier height; BiFeO3; fast and energy-efficient resistive switching
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23089) publication
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Advanced Electronic Materials (2016), 1500352
DOI: 10.1002/aelm.201500352
Cited 19 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-23089