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1 PublicationElectrical conduction and negative magnetoresistance in tellurium-hyperdoped silicon
Wang, M.; Liu, F.; Yuan, Y.; Prucnal, S.; Berencen, Y.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, S.
Abstract
Hyperdoping silicon with chalcogen atoms is a topic of increasing interest due to the strong sub-band gap absorption, which can be exploited to develop infrared photodectectors and intermediate band solar cells [1-3]. In our work, tellurium-hyperdoped Si layers have been fabricated by ion implantation followed by either millisecond flash lamp annealing (FLA) or nanosecond pulsed-laser melting (PLM). The electrical conduction and magnetoresistance of Te-hyperdoped Si are investigated at magnetic fields up to 5 T and temperatures ranging from 2 K to 300 K. With increasing Te concentration, an insulator-to-metal transition is observed although Te introduces a deep donor level (around 300–400 meV) below the Si conduction band. Moreover, the temperature-dependent conductivity measured at zero magnetic field shows that the charge transport is associated with variable-range hopping (VRH) at low temperatures, which scales as δ(T)=δ0 exp[-(T0/T)s] (S=1/4 or 1/2). In addition negative magnetoresistance is observed at low magnetic field, turning positive at B around 0.9 T.
Keywords: hyperdoped silicon; Tellurium; hopping conductivity; negative magnetoresistance
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 24326) publication
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Poster
33rd International Conference on the Physics of Semiconductors, 31.07.-05.08.2016, Beijing, China
Permalink: https://www.hzdr.de/publications/Publ-24326