Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationTerahertz-induced inter-sublevel dynamics of single InAs/GaAs quantum dots studied by micro-photoluminescence
Stephan, D.; Bhattacharyya, J.; Huo, Y. H.; Schmidt, O. G.; Rastelli, A.; Helm, M.; Schneider, H.
Abstract
We explore the transient response of single self-assembled InAs/GaAs quantum dots (QD) to narrow-band terahertz (THz) pulses produced by the free-electron laser FELBE at HZDR. The THz excitation is tuned to the electron inter-sublevel s-to-p transition. For the QDs under study, this transition occurs in the range 13-20 meV because of in-situ intermixing. The THz pulse is applied at a time delay of about 0.7 ns after interband excitation. The dynamics of electron excitation and relaxation between QD sublevels is revealed by time-resolved micro-photoluminescence (PL) measurements performed on individual QDs.
Keywords: quantum dot; photoluminescence; terahertz; free-electron laser
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 24397) publication
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Lecture (Conference)
33rd International Conference on the Physics of Semiconductors (ICPS 2016), 31.07.-05.08.2016, Beijing, China
Permalink: https://www.hzdr.de/publications/Publ-24397