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1 PublicationFormation and characterization of shallow junctions in GaAs made by ion implantation and ms-range flash lamp annealing
Duan, J.; Wang, M.; Vines, L.; Böttger, R.; Helm, M.; Zeng, Y. J.; Zhou, S.; Prucnal, S.
Abstract
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III-V compound semiconductors, with complementary metal-oxide-semiconductor (CMOS) technology. In this study we present the formation of shallow n-p and p-n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond-range flash lamp annealing (FLA). The distribution of implanted elements obtained by Secondary Ion Mass Spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms-range annealing is sufficient to recrystallize implanted layer and to activate the dopants. Formation of p-n and n-p junctions is confirmed by current-voltage characteristics. The on/off-current ratio can reach up to 1.7×107 in the n-GaAs:Zn case.
Keywords: GaAs; shallow junction; ion implantation; flash lamp annealing
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 28096) publication
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Physica Status Solidi (A) 216(2019)8, 1800618
Online First (2018) DOI: 10.1002/pssa.201800618
Cited 3 times in Scopus
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