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2 PublicationsAnisotropic spin-acoustic resonance in silicon carbide at room temperature
Hernandez-Minguez, A.; Poshakinskiy, A. V.; Hollenbach, M.; Santos, P. V.; Astakhov, G.
Abstract
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of 1 and 2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a nontrivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance that changes upon magnetic field inversion. These results establish silicon carbide as a highly promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
Keywords: Spin qubits; surface acoustic waves; quantum technology; SiC
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 31445) publication
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Physical Review Letters 125(2020), 107702
DOI: 10.1103/PhysRevLett.125.107702
Cited 16 times in Scopus -
Contribution to WWW
arXiv:2005.00787 [cond-mat.mes-hall]: https://arxiv.org/abs/2005.00787
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