Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
2 PublicationsPoint defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon
Jäger, H.-U.
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Contribution to proceedings
Mat. Res. Soc. Symp., MRS Spring Meeting 1995, San Francisco -
Journal of Applied Physics 78 (1), 1 July 1995, 176-186
DOI: 10.1063/1.360649
Cited 23 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-346