Ion-induced telecom single photon emitters in silicon

Astakhov, Georgy; Hollenbach, M.; Klingner, Nico; Jagtap, Nagesh; Bischoff, Lothar; Fowley, Ciaran; Kentsch, Ulrich; Hlawacek, Gregor; Erbe, Artur; Abrosimov, N. V.; Helm, Manfred; Berencen, Yonder

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Ion-induced telecom single photon emitters in silicon

Astakhov, G.; Hollenbach, M.; Klingner, N.; Jagtap, N.; Bischoff, L.; Fowley, C.; Kentsch, U.; Hlawacek, G.; Erbe, A.; Abrosimov, N. V.; Helm, M.; Berencen, Y.

Abstract

A review of single photon emitters in silicon based on ion-induced defects is provided. Fabrication methods and current state of the art are discussed.

Keywords: Telecom-wavelength single-photon sources; Color centers in silicon; Focused ion beam

Involved research facilities

Ion Beam Center DOI: 10.17815/jlsrf-3-159

Related publications

DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37551) publication

Invited lecture (Conferences)
Workshop on Spin-Photon Interfaces for Quantum Communication, 01.09.2023, Vienna, Austria

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