Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

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High electrical activation of aluminium and nitrogen implanted in 6H-SiC at room temperature by RF annealing

Lazar, M.; Ottaviani, L.; Locatelli, M. L.; Raynaud, D.; Planson, D.; Morvan, E.; Godignon, P.; Skorupa, W.; Chante, J. P.

  • Materials Science Forum 353-356 (2001) 571

Permalink: https://www.hzdr.de/publications/Publ-5035


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