Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationIn situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers
Rinderknecht, J.; Prinz, H.; Kammler, T.; Schell, N.; Zchech, E.; Wetzig, K.; Gessner, T.
Abstract
The formation of nickel silicides has been studied by X-ray diffraction experiments using synchrotron radiation (SR). A high temperature chamber was used to investigate the phase formation and transition processes under quasi-static conditions at temperatures from 200 to 650 °C. Samples with different dopants, several metal layer thicknesses as well as samples with and without a 150 A TiN capping layer on single-crystal (001) and polycrystalline silicon substrates were examined. While n-type dopants like P and As had no significant impact on the silicidation processes, boron decreased the range of thermal stability of the low-resistivity phase NiSi. A TiN capping layer shifts both these formation and transition temperatures to higher values.
Keywords: Nickel silicide; Phase formation; Transition temperatures; Dopants; Capping layer
- Microelectronic Engineering 70 (2003) 226-232
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