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2 PublicationsRecent results of slow positron implantation spectroscopy to characterize vacancy-type damage in ion-implanted 6H-SiC
Brauer, G.
Abstract
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Lecture (Conference)
Seminar an der University of Hong Kong, Physics Department, 13.01.2006, Hong Kong, China -
Lecture (Conference)
Seminar an der Chinese University of Hong Kong, Department of Electronic Engineering, 17.01.2006, Hong Kong, China
Permalink: https://www.hzdr.de/publications/Publ-8648