Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

"Online First" included
Without submitted and only approved publications
Only approved publications

33168 Publications

Influence of surface roughness on measuring depth profiles and the total amount of implanted ions by RBS and ERDA

Behrisch, R.; Grigull, S.; Kreißig, U.; Grötzschel, R.;
  • Lecture (Conference)
    13th Int. Conf. on Ion Beam Analysis (IBA-13), Lisboa, Portugal, Aug. 1997

Permalink: https://www.hzdr.de/publications/Publ-2367
Publ.-Id: 2367


Process simulation of sub-µm pattern formation by local oxidation of CoSi2/Si heterostructures

Antons, A.; Heinig, K.-H.; Mantl, S.;
  • Lecture (Conference)
    Int. Workshop on Challenges in Predictive Process Simulation (ChiPPS '97), Wandlitz, Germany, Aug. 17 - 20, 1997

Permalink: https://www.hzdr.de/publications/Publ-2364
Publ.-Id: 2364


Atomic scale simulations based on classical molecular-dynamics and ab initio-methods: advantageous tools for understanding growth and properties of boron nitride

Albe, K.; Posselt, M.; Möller, W.;
  • Lecture (Conference)
    Int. Workshop on Challenges in Predictive Process Simulation (ChiPPS '97), Wandlitz, Germany, Aug. 17 - 20, 1997

Permalink: https://www.hzdr.de/publications/Publ-2363
Publ.-Id: 2363


Molecular-dynamics simulations on boron nitride thin film deposition

Albe, K.; Möller, W.;
  • Invited lecture (Conferences)
    10th Int. Conference on Surface Modification of Metals by Ion Beams, Gatlinburg, USA, September 22-26, 1997 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2362
Publ.-Id: 2362


Computersimulationen zur Schichtabscheidung von Bornitrid

Albe, K.; Möller, W.;
  • Lecture (Conference)
    Frühjahrstagung der DPG, AK: Festkörperphysik, FB: Dünne Schichten, Münster, Germany, March 17-21, 1997

Permalink: https://www.hzdr.de/publications/Publ-2361
Publ.-Id: 2361


High-spin states in 205Rn: A new shears band structure?

Novak, J. R.; Beausang, C. W.; Amzal, N.; Casten, R. F.; Cata Danil, G.; Cocks, J. F. C.; Cooper, J. R.; Greenlees, P. T.; Hannachi, F.; Helariutta, K.; Jones, P.; Julin, R.; Juutinen, S.; Kankaanpaä, H.; Kettunen, H.; Krücken, R.; Kuusiniemi, P.; Leino, M.; Benyuan, L.; Muikku, M.; Savelius, A.; Socci, T.; Thomas, J. T.; Zamfir, N. V.; Zhang, J.-Y.; Frauendorf, S.;
  • Physical Review C, Volume 59, Number 6, June 1999, R2989-R2992

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Permalink: https://www.hzdr.de/publications/Publ-2360
Publ.-Id: 2360


Magnetic rotational bands in 108Sb

Jenkins, D. G.; Wadsworth, R.; Cameron, J.; Clark, R. M.; Fossan, D. B.; Hibbert, I. M.; Janzen, V. P.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Parry, C. M.; Sears, J. M.; Smith, J. F.; Frauendorf, S.;
  • Physical Review C, Volume 58, Number 5, November 1998, 2703-2709

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Permalink: https://www.hzdr.de/publications/Publ-2359
Publ.-Id: 2359


In-situ TEM study of the evolution of CoSi2 precipitates during annealing and ion irradiation

Palard, M.; Ruault, M. O.; Bernas, H.; Strobel, M.; Heinig, K.-H.;
  • Contribution to external collection
    Proc. of the Royal Microscopical Society Conf. "Microscopy of Semiconducting Materials 1997"; Inst. Phys. Conf. Ser. 157 (1997) 501
  • Lecture (Conference)
    10th International Conference on Microscopy of Semiconducting Materials, Oxford, UK, April 7 - 10, 1997

Permalink: https://www.hzdr.de/publications/Publ-2358
Publ.-Id: 2358


TEM investigation of CxSi defects in C implanted silicon

Werner, P.; Eichler, S.; Mariani, G.; Kögler, R.; Skorupa, W.;
  • Appl. Phys. Lett. 70 (1997) 252

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Permalink: https://www.hzdr.de/publications/Publ-2357
Publ.-Id: 2357


Preparation, structure and properties of MoSx films

Weise, G.; Mattern, N.; Hermann, H.; Teresiak, A.; Bächer, I.; Brückner, W.; Bauer, H.-D.; Vinzelberg, H.; Reiss, G.; Kreißig, U.; Mäder, M.; Markschläger, P.;
  • Thin Solid Films 298 (1997) 98

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Permalink: https://www.hzdr.de/publications/Publ-2356
Publ.-Id: 2356


Generation of radiation defects in high resistivity silicon at cyclic irradiation and annealing

Verbitskaya, E. M.; Eremin, V. K.; Ivanov, A. M.; Li, Z.; Schmidt, B.;
  • Fisika i Tekhnika Poluprovodnikov 31 (1997) 235

Permalink: https://www.hzdr.de/publications/Publ-2355
Publ.-Id: 2355


Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing

Verbitskaya, E. M.; Eremin, V. K.; Ivanov, A. M.; Li, Z.; Schmidt, B.;
  • Semiconductors 31 (1997) 189

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Permalink: https://www.hzdr.de/publications/Publ-2354
Publ.-Id: 2354


Aluminium implantation of p-SiC for ohmic contacts

Spieß, L.; Nennewitz, O.; Weishart, H.; Lindner, J.; Skorupa, W.; Romanus, H.; Erler, F.; Petzoldt, J.;
  • Diamond and Rel. Mat. 6 (1997) 1414

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Permalink: https://www.hzdr.de/publications/Publ-2353
Publ.-Id: 2353


Confirmation of the Shears Mechanism in Near-Spherical Tin Nuclei

Jenkins, D. G.; Wadsworth, R.; Cameron, J. A.; Clark, R. M.; Fossan, D. B.; Hibbert, I. M.; Janzen, V. P.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Parry, C. M.; Sears, J. M.; Smith, J. F.; Frauendorf, S.;
  • Physical Review Letters, Volume 83, Number 3, 19 July 1999, 500-503

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Permalink: https://www.hzdr.de/publications/Publ-2352
Publ.-Id: 2352


Preparation of CNx films by ion beam assisted filtered cathodic arc deposition

Spaeth, M.; Kühn, M.; Kreißig, U.; Richter, F.;
  • Diamond and Rel. Mat. 6 (1997) 626

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Permalink: https://www.hzdr.de/publications/Publ-2351
Publ.-Id: 2351


Fernüberwachung ukrainischer Kernkraftwerke (in Russisch)

in Russian
Beyer, M.; Carl, H.; Schumann, P.; Seidel, A.;
Die zu Beginn der neunziger Jahre in der Ukraine praktizierte Überwachung der Kernkraftwerke ermöglichte der Genehmigungs- und Aufsichtsbehörde nur einen unzureichenden Zugang zu Informationen über den jeweils aktuellen betrieblichen Sicherheitszustand.
Deshalb wurde für den 5. Block des KKW Saporoshje (WWER-1000/W-320) ein modernes betriebliches Überwachungssystem als Pilotprojekt konzipiert, eingerichtet und Ende 1995 in den Probebetrieb überführt. Es ergänzt die vorhandenen betrieblichen Kontroll- und Überwachungseinrichtungen durch Einbeziehung moderner informationstechnischer Mittel. Das System ermöglicht schwerpunktmäßig eine kontinuierliche Beobachtung des Zustandes vom Block 5 bei Normalbetrieb und bei Betriebsstörungen bzw. Störfällen, so daß bei erkennbaren Abweichungen vom bestimmungsgemäßen Anlagenbetrieb frühzeitig durch Nachfrage und Anordnung darauf reagiert werden kann.
Ein ähnliches Überwachungssystem konnte 1998 für den ersten und zweiten Block des KKW Rovno (WWER-440/W-213) eingerichtet und an das Informations- und Krisenzentrum in Kiew angeschlossen werden.

Keywords: ukrainische Kernkraftwerke, KKW, Fernüberwachung
  • Atomnaja Technika sa rubeshom, Nr.8 (1999), page 3-8

Permalink: https://www.hzdr.de/publications/Publ-2350
Publ.-Id: 2350


Proton irradiation effects in silicon junction diodes and charge-coupled devices

Simoen, E.; Vanhellemont, J.; Alaerts, A.; Claeys, C.; Gaubas, E.; Kaniava, A.; Ohyama, H.; Sunaga, H.; Nashiyama, I.; Skorupa, W.;
  • Radiation Phys.Chem. 50 (1997) 417

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Permalink: https://www.hzdr.de/publications/Publ-2349
Publ.-Id: 2349


Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch stop properties

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Calvo-Barrio, L.; Morante, J. R.; Esteve, J.; Acero, M. C.; Skorupa, W.; Kögler, R.;
  • J. Electrochem. Soc. 144 (1997) 2211

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Permalink: https://www.hzdr.de/publications/Publ-2348
Publ.-Id: 2348


Growth of buried oxide layers of SOI-structures by thermal oxidation of the top silicon layer

Schroer, E.; Hopfe, S.; Tong, Q.-Y.; Gösele, U.; Skorupa, W.;
  • J. Electrochem. Soc. 144 (1997) 2205

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Permalink: https://www.hzdr.de/publications/Publ-2347
Publ.-Id: 2347


SANS investigation of plasma-sprayed materials using double-crystal diffractometer

ŠAroun, J.; Eichhorn, F.; Hempel, A.; Lukas, P.; Kolman, B.; Neufuss, K.; Mikula, P.; Strunz, P.;
  • Physica B234-236 (1997) 1011

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Permalink: https://www.hzdr.de/publications/Publ-2346
Publ.-Id: 2346


Astatine-211 production at the Rossendorf cyclotron

Guratzsch, H.;
The production of Astatine-211 with the 120 cm Rossendorf cyclotron U-120 has been going on for two decades. Natural Bismuth evaporated on an Aluminium backing, a specially constructed water cooled target-block, is irradiated by 28 MeV Alpha-particles: 209Bi(Alpha, 2n)211At. For safety reasons the beam current is limited to 10 µA. The irradiated target is transported to the user who extracts the Astatine by himself. He also prepares the target with Bismuth for the next irradiation.
Keywords: Isotope production, Astatine-211, cyclotron, target construction
  • Lecture (Conference)
    Meeting on 211-At in anti-cancer therapy, Ispra, June 7th / 8th, 1999

Permalink: https://www.hzdr.de/publications/Publ-2345
Publ.-Id: 2345


Shears Mechanism in the A ~ 110 Region

Clark, R. M.; Asztalos, S. J.; Busse, B.; Chiara, C. J.; Cromaz, M.; Deleplanque, M. A.; Diamond, R. M.; Fallon, P.; Fossan, D. B.; Jenkins, D. G.; Juutinen, S.; Kelsall, N.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Macleod, R. W.; Schmid, G.; Sears, J. M.; Smith, J. F.; Stephens, F. S.; Vetter, K.; Wadsworth, R.; Frauendorf, S.;
  • Physical Review Letters, Volume 82, Number 16, 19 April 1999, 3220-3223

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Permalink: https://www.hzdr.de/publications/Publ-2344
Publ.-Id: 2344


TEM characterization of carbon ion implantation into epitaxial Si1-xGex

Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; Calvo-Barrio, L.; Bachrouri, A.; Gonzalez-Varona, O.; Morante, J. R.; Kögler, R.; Skorupa, W.;
  • Contribution to external collection
    Inst. Phys. Conf. Ser. 157 (1997) 419
  • Lecture (Conference)
    Int. Conf. on Microscopy of Semiconducting Materials, Oxford, England, April 1997

Permalink: https://www.hzdr.de/publications/Publ-2343
Publ.-Id: 2343


Härten von Edelstahl durch Stickstoff-Plasma-Immersions-Ionenimplantation

Richter, E.; Günzel, R.;
  • Ingenieur-Werkstoffe 6 (1997) 44

Permalink: https://www.hzdr.de/publications/Publ-2342
Publ.-Id: 2342


Rotational alignment near N=Z and proton-neutron correlations

Frauendorf, S.; Sheikh, J. A.;
  • Physical Review C, Volume 59, Number 3, March 1999, 1400-1404

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Permalink: https://www.hzdr.de/publications/Publ-2341
Publ.-Id: 2341


Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behaviour of nitrogen implanted $-SiC films

Reichert, W.; Lossy, R.; Gonzalez Sirgo, M.; Obermeier, E.; Skorupa, W.;
  • Diam. Relat. Mater. 6 (1997) 1445

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Permalink: https://www.hzdr.de/publications/Publ-2340
Publ.-Id: 2340


Gas-sensor properties of SnO2 films implanted with gold and iron ions

Nomura, N.; Shiozawa, H.; Takada, T.; Reuther, H.; Richter, E.;
  • J. Mat. Sci.: Materials in Electronics 8 (1997) 301

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Permalink: https://www.hzdr.de/publications/Publ-2339
Publ.-Id: 2339


Fluorine profiles in achondrites and chondrites from antarctica by nuclear reaction analysis (NRA)

Noll, K.; Döbeli, M.; Tobler, L.; Grambole, D.; Krähenbühl, U.;
  • Meteorites and Planet Sci. 32 (1997) A101

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Permalink: https://www.hzdr.de/publications/Publ-2338
Publ.-Id: 2338


Electrical resistivity and positron lifetime studies of the Cu-Mn system

Nicht, E.-M.; Brauer, G.; Vostry, P.; Cieslar, M.; Blazek, P.;
  • Nukleonika 42 (1997) 175

Permalink: https://www.hzdr.de/publications/Publ-2337
Publ.-Id: 2337


Positron annihilation spectroscopy, electrical resistivity, and microstructural transmission electron microscopy studies of the CuMn system

Nicht, E.-M.; Brauer, G.; Cieslar, M.; Vostry, P.;
  • Mat. Sci. Forum 255-257 (1997) 572

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Permalink: https://www.hzdr.de/publications/Publ-2336
Publ.-Id: 2336


Layered artefacts: Non-destructive characterization by PIXE and RBS

Neelmeijer, C.; Mäder, M.; Wagner, W.; Schramm, H.-P.;
To identify paint layer arrangements and their elemental composition without sampling, the ion beam techniques PIXE/RBS are successfully applied on air.
Keywords: PIXE, RBS, proton beam on air, non-destructive analysis, paint layers
  • Optical Technologies in the Humanities, OWLS IV, ed. by D. Dirksen, G. von Bally, Springer, (1997) 105

Permalink: https://www.hzdr.de/publications/Publ-2335
Publ.-Id: 2335


Experimental determination of positron related surface characteristics of 6H-SiC

Nangia, A.; Kim, J. H.; Weiß, A. H.; Brauer, G.;
  • Mat. Sci. Forum 255-257 (1997) 711
  • Lecture (others)
    American Physical Society Meeting, Kansas City, USA, March 1997
  • Lecture (Conference)
    11th Int. Conf. on Positron Annihilation (ICPA-11), Kansas City, USA, May 25-30,1997
  • Lecture (Conference)
    American Vacuum Society - Texas Chapter (Symp. on Electronic Materials, Processing and Characteri-zation), Austin, TX, USA, June 3 - 4, 1997

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Permalink: https://www.hzdr.de/publications/Publ-2334
Publ.-Id: 2334


Plasma-Immersions-Ionenimplantation für große Oberflächen

Möller, W.; Günzel, R.; Mändl, S.; Richter, E.;
  • JOT 37 (1997) II-IV

Permalink: https://www.hzdr.de/publications/Publ-2333
Publ.-Id: 2333


Sensitization of silicon nitride surfaces for Ag+ ions by ion implantation

Möller, D.; Pham, M. T.; Hüller, J.;
  • Sensors and Actuators B43 (1997) 110

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Permalink: https://www.hzdr.de/publications/Publ-2332
Publ.-Id: 2332


X-ray diffraction investigations of NdGaO3 single crystals

Mazur, K.; Sass, J.; Giersz, W.; Schell, N.;
  • Acta Physica Polonica A92 (1997) 226

Permalink: https://www.hzdr.de/publications/Publ-2331
Publ.-Id: 2331


Defects in detwinned LaGaO3 substrates

Mazur, K.; Fink-Finowicki, J.; Berkowski, M.; Schell, N.;
  • Acta Physica Polonica A92 (1997) 205

Permalink: https://www.hzdr.de/publications/Publ-2330
Publ.-Id: 2330


Doping of 3C-SiC by implantation of nitrogen at high temperatures

Lossy, R.; Reichert, W.; Obermeier, E.; Skorupa, W.;
  • J. Electronic Materials 26 (1997) 123

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Permalink: https://www.hzdr.de/publications/Publ-2329
Publ.-Id: 2329


Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy

Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.;
  • Appl. Phys. Lett. 70 (1997) 2696

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Permalink: https://www.hzdr.de/publications/Publ-2328
Publ.-Id: 2328


Application of the ECR slot antenna plasma source for ion implantation

Korzec, D.; Raiko, V.; Engemann, J.; Günzel, R.; Brutscher, J.; Möller, W.;
  • Surf. Coat. Technol. 93 (1997) 217

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Permalink: https://www.hzdr.de/publications/Publ-2327
Publ.-Id: 2327


Metal gettering by defective regions in carbon-implanted silicon

Kögler, R.; Kaschny, J. R.; Yankov, R. A.; Werner, P.; Danilin, A. B.; Skorupa, W.;
  • Solid State Phenomena 57/58 (1997) 63

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Permalink: https://www.hzdr.de/publications/Publ-2326
Publ.-Id: 2326


Observation of a (nü7/2-[514])2 crossing 180Os

Lieder, R. M.; Venkova, T.; Utzelmann, S.; Gast, W.; Schnare, H.; Spohr, K.; Hoernes, P.; Georgiev, A.; Bazzacco, D.; Menegazzo, R.; Rossi-Alvarez, C.; de Angelis, G.; Kaczarowski, R.; Rzaca-Urban, T.; Morek, T.; Marti, G. V.; Maier, K. H.; Frauendorf, S.;
  • Nuclear Physics A 645 (1999) 465-491

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Permalink: https://www.hzdr.de/publications/Publ-2325
Publ.-Id: 2325


Amorphization and crystallization effects in high-dose zinc-implanted silicon

Kalitzova, M.; Simov, S.; Yankov, R. A.; Angelov, C.; Vitali, G.; Rossi, M.; Pizzuto, C.; Zollo, G.; Fauré, J.; Killian, K.; Bonhomme, P.; Voelskow, M.;
  • J. Appl. Phys. 81 (1997) 1143

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Permalink: https://www.hzdr.de/publications/Publ-2323
Publ.-Id: 2323


Annealing effects in light emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

Kachurin, G. A.; Zhuravlev, K. S.; Pazdnikov, N. A.; Leyer, A. F.; Tyschenko, I. E.; Volodin, V. A.; Skorupa, W.; Yankov, R. A.;
  • Nucl. Instr. Meth. B127/128 (1997) 583

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Permalink: https://www.hzdr.de/publications/Publ-2322
Publ.-Id: 2322


Visible and near-infrared luminescence from Si nanostructures formed by ion implantation and pulse annealing

Kachurin, G. A.; Tyschenko, I. E.; Zhuravlev, K. S.; Pazdnikov, N. A.; Volodin, V. A.; Gutakovsky, A. K.; Leier, A. F.; Skorupa, W.; Yankov, R. A.;
  • Nucl. Instr. Meth. B122 (1997) 571

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Permalink: https://www.hzdr.de/publications/Publ-2321
Publ.-Id: 2321


Crystal-GRID investigations of atomic collision cascades in ionic compounds

Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Doll, C.;
  • Mat. Sci. Forum 248-249 (1997) 49

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Permalink: https://www.hzdr.de/publications/Publ-2320
Publ.-Id: 2320


Void formation in Ge induced by high energy heavy ion irradiation

Huber, H.; Assmann, W.; Karamian, S. A.; Mücklich, A.; Prusseit, W.; Gazis, E.; Grötzschel, R.; Kokkoris, M.; Kossionidis, E.; Mieskes, H. D.; Vlastou, R.;
  • Nucl. Instr. Meth. B122 (1997) 542

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Permalink: https://www.hzdr.de/publications/Publ-2319
Publ.-Id: 2319


Void formation and surface rippling in Ge induced by high energetic Au irradiation

Huber, H.; Assmann, W.; Grötzschel, R.; Mieskes, H. D.; Mücklich, A.; Nolte, H.; Prusseit, W.;
  • Mat. Sci. Forum 248/249 (1997) 301

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Permalink: https://www.hzdr.de/publications/Publ-2318
Publ.-Id: 2318


Pressure/composition isotherms of proton conducting SrYb0.05Zr0.95O2.975/H2O by means of nuclear resonance reaction analysis

Hempelmann, R.; Eschenbaum, J.; Altmayer, M.; Groß, B.; Grambole, D.; Herrmann, F.; Nagengast, D.; Krauser, J.; Weidinger, A.;
Films of SrYb0.05Zr0.095O2.975 were prepared by sol-gel processing. Water vapour pressure/hydrogen composition isotherms were recorded ex-situ comprising
pressures between 0 and 84.5 kPa and temperatures between 873 and 1073 K. Nuclear Resonance Reaction Analysis (NRRA) was used to determine the
hydrogen concentration and, in addition, depth profiles of hydrogen concentration. The chemical potential of interstitial hydrogen in oxides could be determined; from
its temperature dependence thermodynamical constants were calculated. We observe two hydrogen fractions with a site energy difference of 20 kJ/mol. A size effect
of the thermodynamic properties is observed below a thickness of 350 nm: nanofilms exhibit higher solubility than bulk material.
Keywords: absorption, materials properties, thermodynamics, solid proton conductor
  • Ber. Bunsenges. Phys. Chemie 101 (1997) 985 No. 7

Permalink: https://www.hzdr.de/publications/Publ-2317
Publ.-Id: 2317


Range and damage distribution in ultra low energy boron ion implantation

Hatzopoulos, N.; Suder, S.; van den Berg, J. A.; Donelly, S. E.; Armour, D. G.; Panknin, D.; Fukarek, W.; Frey, L.; Foad, M. A.; Moffat, S.; Bailey, P.; Naakes, C. T. Q.;
  • Contribution to external collection
    Proc. 11th Int. Conf. Ion Implantation Technology; The Institute of Electrical and Electronics Engineers, Piscataway, USA, 1997, p. 527

Permalink: https://www.hzdr.de/publications/Publ-2316
Publ.-Id: 2316


Formation and characterisation of Si/SiO2 multilayer structures by oxygen implantation into silicon

Hatzopoulos, N.; Siapkas, D. I.; Hemment, P. L. F.; Skorupa, W.;
  • J. Appl. Phys. 80 (1996) 4960

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Permalink: https://www.hzdr.de/publications/Publ-2315
Publ.-Id: 2315


On the presence of molecular nitrogen in nitrogen-implanted amorphous carbon

Grigull, S.; Jacob, W.; Henke, D.; Mücklich, A.; Späth, C.; Sümmchen, L.;
  • Appl. Phys. Lett. 70 (1997) 1387

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Permalink: https://www.hzdr.de/publications/Publ-2314
Publ.-Id: 2314


Overpressurized bubbles versus voids in helium implanted and annealed silicon

Fichtner, P. F. P.; Kaschny, J. R.; Yankov, R. A.; Mücklich, A.; Kreißig, U.; Skorupa, W.;
  • Appl.Phys.Lett. 70 (1997) 732

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Permalink: https://www.hzdr.de/publications/Publ-2312
Publ.-Id: 2312


Long term instabilities in the defect assembly in irradiated high resistivity silicon detectors

Eremin, V.; Ivanov, A.; Verbitskaya, E.; Li, Z.; Schmidt, B.;
  • IEEE Trans. Nucl. Sci. 44 (1997) 819

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Permalink: https://www.hzdr.de/publications/Publ-2311
Publ.-Id: 2311


Effects of pulse-irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam

Dvurechenskii, A. V.; Zinovyev, A.; Makarov, V. V.; Grötzschel, R.; Heinig, K.-H.;
  • JETP Letter 64 (1996) 242

Permalink: https://www.hzdr.de/publications/Publ-2310
Publ.-Id: 2310


Wear improvement of silicate glass surfaces by ion implantation

Deshkovskaya, A. A.; Richter, E.;
  • Surf. Coat. Technol. 93 (1997) 150

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Permalink: https://www.hzdr.de/publications/Publ-2309
Publ.-Id: 2309


Modifizierung von Polymeroberflächen durch Ionenimplantation

Chudoba, T.; Zschiesche, R.; Uhlmann, K.;
  • JOT 37 (1997) VI-VIII

Permalink: https://www.hzdr.de/publications/Publ-2308
Publ.-Id: 2308


Experimental determination of positronic and electronic characteristics of 3C-SiC

Brauer, G.; Anwand, W.; Nicht, E.-M.; Coleman, P. G.; Wagner, N.; Wirth, H.; Skorupa, W.;
  • Appl. Surf. Sci. 116 (1997) 19

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Permalink: https://www.hzdr.de/publications/Publ-2306
Publ.-Id: 2306


Positron mobility in semi-insulating 4H-SiC

Beling, C. D.; Fung, S.; Cheung, S. H.; Gong, M.; Ling, C. C.; Hu, Y. F.; Brauer, G.;
  • Mat. Sci. Forum 255-257 (1997) 260

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Permalink: https://www.hzdr.de/publications/Publ-2304
Publ.-Id: 2304


An EPR study of defects induced in 6H-SiC by ion implantation

Barklie, R. C.; Collins, M.; Holm, B.; Pacaud, Y.; Skorupa, W.;
  • J. Electronic Materials 26 (1997) 137

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Permalink: https://www.hzdr.de/publications/Publ-2303
Publ.-Id: 2303


Heavy-Ion induced effects in Ge crystal damage at the 100 MeV energy range

Assmann, W.; Huber, H.; Mieskes, H. D.; Nolte, H.; Gazis, E.; Kokkoris, M.; Kossionides, S.; Vlastou, R.; Grötzschel, R.; Mücklich, A.; Prusseit, W.; Karamian, S. A.;
  • Nucl. Instr. Meth. B 122 (1997) 250

Permalink: https://www.hzdr.de/publications/Publ-2302
Publ.-Id: 2302


Investigations of the transition region between Si and thermally grown SiO2 layers

Anwand, W.; Brauer, G.; Coleman, P. G.; Goodyear, A.; Reuther, H.; Maser, K.;
  • J. Phys.: Condens. Matter 9 (1997) 2947

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Permalink: https://www.hzdr.de/publications/Publ-2301
Publ.-Id: 2301


Nanostructured arrays formed by finely focused ion beams

Zuhr, R. A.; Budai, J. D.; Datskos, P. G.; Meldrum, A.; Thomas, K. A.; Warmack, R. J.; White, C. W.; Feldman, L. C.; Strobel, M.; Heinig, K.-H.;
  • Lecture (Conference)
    MRS Fall Meeting, Boston, USA, Nov. 30 - Dec. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2300
Publ.-Id: 2300


Stabilisation of the 3C-SiC/SOI system by an intermediate Si3N4 layer

Zappe, S.; Obermeier, E.; Stoemenos, J.; Möller, H.; Krötz, G.; Wirth, H.; Skorupa, W.;
  • Lecture (Conference)
    ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2299
Publ.-Id: 2299


Ion-implantation induced damage In 6H-SiC: the influence of substrate temperature

Wirth, H.; Anwand, W.; Mücklich, A.; Panknin, D.; Voelskow, M.; Brauer, G.; Skorupa, W.; Gonzalez-Varona, O.; Perez-Rodriguez, A.;
  • Lecture (Conference)
    40th Electronic Materials Conference (EMC'98), Charlottesville, Virginia, USA, June 24-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2298
Publ.-Id: 2298


Similarity of energetic depositions of cubic boron nitride and titanium nitride thin films

Wang, X.; Kolitsch, A.; Zhao, J. P.; Möller, W.;
  • Lecture (Conference)
    MRS Fall Meeting 1998, Boston, USA, Nov. 30 - Dec.4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2297
Publ.-Id: 2297


Study of Interatomic Potentials in ZnS - Crystal-GRID Experiments versus ab initio Calculations

Koch, T.; Heinig, K.-H.; Jentschel, M.; Börner, H. G.;
Crystal-GRID measurements have been performed with ZnS single crystals. For the first time, an asymmetric Crystal-GRID line shape could be observed. The preliminary data evaluation indicates that the reported lifetime of the 3221 keV level in 33 is too short. A value of about 60 fs has been found. Due to this ``long'' lifetime the line shape is much less structured than calculated with the reported lifetime.
Keywords: atomic collisions; Crystal-GRID; gamma ray spectroscopy; interatomic potentials; Molecular Dynamics simulations; nuclear lifetimes; ZnS
  • Lecture (Conference)
    Applications of high-precision gamma-spectroscopy, Notre Dame, USA, July 1-3, 1998
  • J. Res. Natl. Inst. Stand. Technol. 105 (2000) 81-87

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Permalink: https://www.hzdr.de/publications/Publ-2296
Publ.-Id: 2296


Tiefenselektive Phasenanalyse Si-ionenimplantierter "-Fe-Oberflächen mittels DCEMS

Walterfang, M.; Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.;
  • Lecture (Conference)
    DPG-Frühjahrstagung, Regensburg, March 23-27,1998

Permalink: https://www.hzdr.de/publications/Publ-2295
Publ.-Id: 2295


Potential investigation for ZnS using Crystal-GRID high-precision gamma spectroscopy and MD computer simulations

Hauschild, T.; Heinig, K.-H.; Jentschel, M.; Börner, H. G.;
Crystal-GRID is a new and complementary method for studying interatomic potentials in crystals at intermediate energies between 1 eV and 1 keV. After a neutron capture reaction a first photon emission leads to a recoil of the still excited nucleus. While moving through the crystal a second photon is emitted. When observing many recoil events a structured and Doppler broadened gamma line shape is obtained due to the anisotropic slowing down in the crystal. Experimental findings from the high-precision gamma spectrometers GAMS 4 and GAMS 5 at the ILL are compared to predictions from molecular dynamics (MD) simulations. Thereby information about the interatomic potential can be obtained. Results will be presented for ZnS single crystals, showing that the universal screened Coulomb potentials (ZBL, KrC) are not appropriate in the examined energy region. A new potential for that region will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS
  • Lecture (Conference)
    DPG Frühjahrstagung, Münster, Germany, March 22-26, 1999

Permalink: https://www.hzdr.de/publications/Publ-2294
Publ.-Id: 2294


Electron energy-loss spectroscopy in transmission of undoped and doped diamond films

Waidmann, S.; Bartsch, K.; Endler, I.; Fontaine, F.; Arnold, B.; Knupfer, M.; Leonhardt, A.; Fink, J.;
  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2293
Publ.-Id: 2293


Surface modification of AISI M2 steel by nitrogen plasma immersion ion implantation

Uglov, V. V.; Rusalsky, D. P.; Kholmetskii, A. L.; Khodasevich, V. V.; Ruebenbauer, K.; Günzel, R.; Richter, E.; Wilbur, P.; Wei, R.;
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2292
Publ.-Id: 2292


Effect of hydrostatic pressure annealing on visible photoluminescence from Si+- and Ge+-implanted SiO2 films

Tyschenko, I. E.; Kachurin, G. A.; Zhuravlev, K. S.; Rebohle, L.; Skorupa, W.;
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2291
Publ.-Id: 2291


Room temperature visible photoluminescence from Ar+- and Ge+-implanted Si3N4- and SiOxNy-films

Tyschenko, I. E.; Kachurin, G. A.; Rebohle, L.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2290
Publ.-Id: 2290


Ion Beam Mixing of the ZrO2/Fe System

Turos, A.; Gawlik, D.; Jagielski, J.; Stonert, A.; Matz, W.; Grötzschel, R.;
  • Lecture (Conference)
    11Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2289
Publ.-Id: 2289


Thermal wave analysis: a tool for non-invasive testing ion beam synthesis of wide band gap materials

Teichert, G.; Schleicher, L.; Knedlik, C.; Voelskow, M.; Skorupa, W.; Yankov, R. A.; Pezoldt, J.;
  • Lecture (Conference)
    MRS Fall Meeting., Boston, USA, Nov. 30 - Dec. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2288
Publ.-Id: 2288


Computer simulation studies of the competition between nucleation and ion mixing in ion beam synthesis of nanoclusters

Strobel, M.; Heinig, K.-H.; Möller, W.;
  • Lecture (Conference)
    4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan, Sept. 15-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2287
Publ.-Id: 2287


In vitro Charakterisierung modifizierter ionenimplantierter Titanoberflächen

Stölzel, M.; Born, R.; Scharnweber, D.; Worch, H.; Pham, M. T.; Wieser, E.;
  • Lecture (Conference)
    Werkstoffwoche, München, Germany, Oct. 12-15, 1998

Permalink: https://www.hzdr.de/publications/Publ-2286
Publ.-Id: 2286


The behaviour of hydrogen in titanium after ion implantation

Soltani-Farshi, M.; Baumann, H.; Richter, E.; Kreißig, U.; Bethge, K.;
  • Lecture (Conference)
    CAARI´98, Denton, USA, December 1998

Permalink: https://www.hzdr.de/publications/Publ-2285
Publ.-Id: 2285


Positron studies of defects in nitrogen and carbon implanted titanium

Soltani-Farshi, M.; Baumann, H.; Anwand, W.; Brauer, G.; Coleman, P. G.; Richter, E.; Kreißig, U.; Bethge, K.;
  • Lecture (Conference)
    1998 Spring Meeting, San Francisco/CA, April 13-17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2284
Publ.-Id: 2284


Wave-ordered nanostructures formed on silicon-on-insulator wafers by means of reactive ion beams

Smirnov, V. K.; Kibalov, D. S.; Krivlevich, S. A.; Lepshin, P. A.; Potapov, E. V.; Ynakov, R. A.; Skorupa, W.; Danilin, A. B.; Makarov, V. V.;
  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2283
Publ.-Id: 2283


Crystal-GRID: Current status and prospects for experimental studies of atomic collisions in solids.

Jentschel, M.; Hauschild, T.; Börner, H. G.; Heinig, K.-H.;
The Doppler effect of electromagnetic radiation represents a very direct indicator to study the motion of emitting particles. In the Crystal-GRID technique one uses the ultra high resolution power of the crystal spectrometers GAMS4 and GAMS5 to measure the Doppler broadening of $\gamma$ radiation emitted from excited nuclei. Thus it represents a new nuclear probe for the direct study of atomic motion in solids at kinetic energies of several hundreds of eV.

A detailed description of the experimental technique will be given together with an overview on already performed experiments using massive single crystals
of TiO2, NaCl, Ni and Cr. In these experiments the comparison of experimental data to predictions deduced from Molecular Dynamics simulations has allowed to obtain new repulsive interatomic potentials.

The currently used double flat crystal geometry of the spectrometers has allowed to use only massive targets. Recent technical improvements of the GAMS5 spectrometer towards a double bent crystal geometry
will allow to extend the technique to studies of crystalline layers as they may result from ion implantation. The current status of the spectrometer and the expected capabilities will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; TiO2, NaCl, Ni, Cr
  • Poster
    ICACS-18, Odense, Denmark, August 3-8, 1999

Permalink: https://www.hzdr.de/publications/Publ-2281
Publ.-Id: 2281


Study of Interatomic Potentials in ZnS using Crystal-GRID high-precision gamma spectroscopy and MD simulations

Hauschild, T.; Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Möller, W.;
Crystal-GRID measurements have been performed with ZnS single crystals. A new Crystal-GRID potential could be determined by splining a Stillinger-Weber like equilibrium potential to screened Coulomb potentials. The new potential is fitted to experimental data containing information about the energy range of about 10 to 500 eV and differs significantly from the screened Coulomb potentials. The nuclear level life time of the 3221 keV level in 33S has been determined to be (48.8 +/- 0.7) fs. Furthermore the predicted asymmetry of a Crystal-GRID line shape could be observed for the first time.
Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS
  • Lecture (Conference)
    ICACS-18, Odense, Denmark, August 3-8, 1999

Permalink: https://www.hzdr.de/publications/Publ-2280
Publ.-Id: 2280


Ion beam processing for silicon-based light emission

Skorupa, W.;
  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2279
Publ.-Id: 2279


Beta-SiC on SiO2 formed by ion implantation and bonding for micromechanical applications

Serre, C.; Romano-Rodriguez, A.; Perez-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Kögler, R.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2278
Publ.-Id: 2278


Bonding and etch-back of ion beam synthesized beta-SiC for SiCOI formation

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Esteve, J.; Kögler, R.; Skorupa, W.;
  • Lecture (Conference)
    NATO Advanced Workshop "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", Kiev, Ukraine, Oct. 1998

Permalink: https://www.hzdr.de/publications/Publ-2277
Publ.-Id: 2277


Characterisation of Al-implanted LiF by a monoenergetic positron beam

Sendezera, E. J.; Davidson, A. T.; Fischer, C. G.; Connell, S. H.; Sellschop, J. P. F.; Anwand, W.; Brauer, G.; Nicht, E.-M.;
  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998

Permalink: https://www.hzdr.de/publications/Publ-2276
Publ.-Id: 2276


Non-destructive analysis of elements with low atomic numbers (Na – K) in artifacts using X-ray fluorescence analysis

Schreiner, M.; Mantler, M.; Neelmeijer, C.; Mäder, M.;
  • Lecture (Conference)
    31th Int. Symp. on Archaeometry, Budapest, Hungary, April 27 - May 1, 1998

Permalink: https://www.hzdr.de/publications/Publ-2275
Publ.-Id: 2275


Temperaturverhalten von durch Hochdosisimplantation hergestellten Al-Fe-Legierungen

Reuther, H.;
  • Lecture (Conference)
    IX. Mößbauerkolloquium, Freiberg, Sept. 28-30, 1998

Permalink: https://www.hzdr.de/publications/Publ-2274
Publ.-Id: 2274


Charakterisierung von durch Ionenimplantation hergestellten Fe-Al-Schichten mittels Augerelektronen- und Mößbauerspektroskopie

Reuther, H.;
  • Lecture (Conference)
    10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998

Permalink: https://www.hzdr.de/publications/Publ-2273
Publ.-Id: 2273


Strong blue electroluminescence from Ge-rich silicondioxide-on-silicon formed by ion beam synthesis

Rebohle, L.; von Borany, J.; Tyschenko, I. E.; Skorupa, W.;
  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2272
Publ.-Id: 2272


Is there still any hope for blue luminescence from silicon?

Rebohle, L.; von Borany, J.; Markwitz, A.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2271
Publ.-Id: 2271


The Installations for Materials Research on ROBL at the ESRF

Prokert, F.; Betzl, M.; Eichhorn, F.; Matz, W.; Schell, N.;
  • Lecture (Conference)
    Jahrestagung DGK, Karlsruhe, März 1998

Permalink: https://www.hzdr.de/publications/Publ-2270
Publ.-Id: 2270


Microscopic processes of damage production during ion implantation studied by combining time-ordered BCA with MD simulations

Posselt, M.;
  • Lecture (Conference)
    MRS Spring Meeting, San Francisco, CA, USA, April 13-17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2269
Publ.-Id: 2269


Pulsed plasma beam mixing of Ti and Mo on Al2O3 substrates

Piekoszewski, J.; Wieser, E.; Grötzschel, R.; Reuther, H.; Werner, Z.; Langner, A.;
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2268
Publ.-Id: 2268


Formation of surface Pd-Ti alloys using pulsed plasma beams

Piekoszewski, J.; Werner, Z.; Wieser, E.; Langner, J.; Grötzschel, R.; Reuther, H.; Jagielski, J.;
  • Lecture (Conference)
    ION'98, Kazimierz Dolny, Poland, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2267
Publ.-Id: 2267


Structural and compositional characterisation of N+ and Al+ co-implanted 6H-SiC using optical methods

Pezoldt, J.; Yankov, R. A.; Fukarek, W.; Mücklich, A.; Fontaine, F.; Skorupa, W.; Werninghaus, T.; Zahn, D.;
  • Lecture (Conference)
    9th Europ. Conf. on Diamond, Diamond-like Materials, Nitrides, and Silicon Carbide, Crete, Greece, Sept. 13-18, 1998

Permalink: https://www.hzdr.de/publications/Publ-2266
Publ.-Id: 2266


A novel (SiC)1-x(AIN)x compound synthesized using ion beams

Pezoldt, J.; Yankov, R. A.; Mücklich, A.; Fukarek, W.; Reuther, H.; Skorupa, W.;
  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2265
Publ.-Id: 2265


Nitriding of stainless steel by low energy ion implantation - the nitriding kinetics

Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.;
Stainless steels are known for their excellent corrosion resistance based on a native surface oxide layer and a moderate hardness leading to short life times in applications with intensive wear. Hence, surface hardening could greatly enlarge their range of applications. However, stainless steels are considered as difficult candidates for surface hardening. Nitriding by low-energy ion implantation is a promising technique. At target temperatures of about 400°C the formation of a highly nitrogen enriched layer has been observed. This layer exhibits an increased surface hardness and a reduced wear without adversely affecting the excellent corrosion resistance.
This work focuses on the nitriding kinetics which are not well understood. Experimental data has been obtained by time and depth resolved elemental analyses using elastic recoil detection (ERD) during the nitriding process. The ERD technique has been optimised for time resolved in-situ data acquisition. Fast nitrogen diffusion, an energy and current density dependence of the thickness of the nitrogen enriched layer and an influence of the surface oxide layer have been observed. The physical origin of these phenomena will be revealed and a simple model of the nitriding process taking into account the governing physical processes, i. e. sputtering, recovering of the surface from the residual gas and diffusion in the solid, will be presented.
  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2264
Publ.-Id: 2264


Nitrogen transport during plasma ion nitriding of austenitic stainless steel - the role of the native surface oxide layer

Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.;
Austenitic stainless steels are widely used due to their advantageous combination of properties as ductility, strength and excellent corrosion resistance. However, due to their moderate hardness they are not suited for abrasively stressed parts. Hence, the market potential of austenitic stainless steels could be greatly enhanced by a process that allows surface hardening without negatively affecting the other properties. Standard techniques as heat treatment, carburizing and conventional nitriding fail. Recently it has been shown that ion nitriding at moderate temperature is a promising candidate for surface hardening austenitic stainless steels. Surface hardness increased by factors of 4 to 5 leading to wear resistance increases by more than two orders of magnitude have been achieved without compromising the excellent corrosion resistance. It has been reported that the nitriding velocity depends on the ion energy and on the current density and that the passivating surface oxide layer of the austenitic stainless steels may play an important role. In a systematic study the influence of the surface oxide layer on the nitriding efficiency of ion nitriding austenitic stainless steel at moderate temperatures is analyzed by determining the retained nitrogen dose for fixed process times and temperatures but different oxygen partial pressures, ion current densities and ion energies. Additionally, for some selected process parameters during processing, the composition of the near surface region (down to 150nm) regarding the nitrogen, the carbon and the oxygen content is obtained by an in situ experiment.
  • Lecture (Conference)
    Int. Conf. on Metallurgical Coatings and Thin Films, San Diego, April 27 - May 1, 1998

Permalink: https://www.hzdr.de/publications/Publ-2263
Publ.-Id: 2263


Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC

Panknin, D.; Wirth, H.; Mücklich, A.; Skorupa, W.;
  • Lecture (Conference)
    ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2262
Publ.-Id: 2262


Positron affinities and deformation potentials in cubic semiconductors

Panda, B. K.; Brauer, G.;
  • Lecture (Conference)
    30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998
  • Acta Physica Polonica, No. 4, Vol. 95 (1999), 641-646

Permalink: https://www.hzdr.de/publications/Publ-2261
Publ.-Id: 2261


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