Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

"Online First" included
Without submitted and only approved publications
Only approved publications

34123 Publications

The ELBE radiation source project at the Research Center Rossendorf

Brauer, G.; Wendler, W.; Büttig, H.; Gabriel, F.; Gippner, P.; Gläser, W.; Grosse, E.; Guratzsch, H.; Dönau, F.; Höhnel, G.; Janssen, D.; Nething, U.; Pobell, F.; Prade, H.; Pröhl, D.; Schilling, K.-D.; Schlenk, R.; Seidel, W.; Stephan, J.; vom Stein, P.; Wenzel, M.; Wustmann, B.; Zahn, R.

  • Lecture (Conference)
    11th Int. Conf. on Positron Annihilation (ICPA-11), Kansas City, USA, May 25-30, 1997
  • Mat. Sci. Forum 255-257 (1997) 732

Permalink: https://www.hzdr.de/publications/Publ-2378
Publ.-Id: 2378


Strong Blue Photo- and Electroluminescence from Ge implanted SiO2 films

von Borany, J.; Grötzschel, R.; Heinig, K.-H.; Markwitz, A.; Matz, W.; Möller, W.; Rebohle, L.; Schmidt, B.; Skorupa, W.

  • Lecture (Conference)
    Herbstschule Elektronenmikroskopie, Halle, Sept. 20 - 25, 1997

Permalink: https://www.hzdr.de/publications/Publ-2377
Publ.-Id: 2377


Schwingungsmodellierung zur Unterstützung der Diagnostik an Druckwasserreaktoren

Altstadt, E.

Überblicksvortrag zu den Arbeiten zur Schwingungsmodellierung und Diagnostik an Reaktoren des Typs WWER-440

Keywords: Finite-Elemente-Analyse; Schwingungsüberwachung

  • Lecture (others)
    Sächsisches Kolloquium Technische Diagnostik, TU Dresden, 29.01.1999

Permalink: https://www.hzdr.de/publications/Publ-2376
Publ.-Id: 2376


Finite element-based vibration analyses of WWER-440 type reactors

Altstadt, E.; Weiss, F.-P.

To support the early detection of mechanical component faults at WWER-440 reactors a finite-element-model describing the mechanical vibrations of the whole primary circuit was established. A special element was developed to describe the fluid-structure interaction in the downcomer. It is based on an approximated analytical 2D-solution of the coupled system of 3D fluid equations and the structural equations of motions.
The vibration modes up to 30 Hz were calculated. It is shown that the fluid-structure interaction strongly influences those modes with a relative displacement between reactor pressure vessel and core barrel.
Moreover, by means of the model the shift of eigenfrequencies due to the degradation or to the failure of internal clamping and spring elements was investigated. Comparing the frequency spectra of the normal and the faulty structure, one could prove that a recognition of such degradations and failures even inside the reactor pressure vessel is possible by pure excore vibration measurements. The results hint at the
opportunity to establish a monitoring procedure that is capable of distinguishing between guide lug and spring pipe failures, because these two types of failures are mapped in different and well separated frequency regions. Moreover, it seems that it is possible to detect these failures by pure excore vibration measurements, what is important since incore vibration measurements are difficultly to be implemented over longer time periods. When measuring the displacements for x and y-direction even the localization of the failed guide lug might become achievable.

Keywords: finite-element analysis; FSI; vibration monitoring

  • Nuclear Technology, Vol. 128 (1999) p. 46-57

Permalink: https://www.hzdr.de/publications/Publ-2375
Publ.-Id: 2375


Finite-element based vibration analyses of WWER-440 type reactors

Altstadt, E.; Weiss, F.-P.

A finite-element-model describing the mechanical vibrations of the whole WWER-440 primary circuit was established to support the early detection of mechanical component faults. A special fluid-structure module was developed to consider the reaction forces of the fluid in the downcomer upon the moving core barrel and the rector pressure vessel. This fluid-structure interaction module is based on an approximated analytical 2D-solution of the coupled system of 3D fluid equations and the structural equations of motions. By means of the vibration model all igenfrequencies up to 30 Hz and the corresponding mode shapes were calculated. It is shown that the fluid-structure interaction strongly influences those modes that lead to a relative displacement between reactor pressure vessel and core barrel. Moreover, by means of the model the shift of eigenfrequencies due to the degradation or to the failure of internal clamping and spring elements was investigated. Comparing the frequency spectra of the normal and the faulty structure, it could be proved that a recognition of such degradations and failures even inside the reactor pressure vessel is possible by pure excore vibration measurements.

Keywords: finite-element-modelling; fluid-structure interactions; vibration monitoring

  • Annals of Nuclear Energy, Vol 26 (12), 1999, pp. 1037-1052

Permalink: https://www.hzdr.de/publications/Publ-2374
Publ.-Id: 2374


Finite element analysis of a BWR feed water distributor under extreme transient pressure load

Altstadt, E.; Ohlmeyer, H.; Otremba, F.; Weiss, F.-P.

During a hypothetical break of a BWR feed water line, the feed water distributor (FWD) inside the RPV is subjected to a high pressure load for a short time (10 ms). Because of the sudden coolant release from the inner volume of the FWD there is a pressure difference between the inner and outer surface. It is conservatively assumed that the pressure difference nearly can reach the operating pressure for a few milliseconds. The ring line of the feed water distributor is modelled with shell and volume elements capable of being used for large strain analyses with elastic-plastic material behaviour. It is demonstrated by non-linear static calculations (without consideration of the inertia of the material) that a buckling instability occurs at about 60% of the maximum pressure load. The arc-length method is used for the numerical solution to overcome this point of instability. To evaluate the influence of the dynamics of the process a non-linear transient analysis is done showing that the maximum strain occurs with a time delay to the pressure peak. The maximum plastic strain differs only nsignificantly between static and transient solution. Inspite of the large strains the mechanical integrity is maintained during the hypothetical event.

Keywords: BWR; Finite element analysis; Large strain; Plasticity; Transient analysis

  • Lecture (Conference)
    7th International Conference on Nuclear Engineering (ICONE-7), April 19-23, 1999, Tokyo, ICONE-7073
  • Contribution to proceedings
    7th International Conference on Nuclear Engineering (ICONE-7), April 19-23, 1999, Tokyo, ICONE-7073

Permalink: https://www.hzdr.de/publications/Publ-2373
Publ.-Id: 2373


Tritium depth profiling in carbon samples from fusion experiments

Friedrich, M.; Pilz, W.; Sun, G.; Behrisch, R.; Garcia-Rosales, C.; Bekris, N.; Penzhorn, R.-D.

Tritium depth profiling measurements by accelerator mass spectrometry have been performed at the facility installed at the Rossendorf 3 MV Tandetron. Hydrogen and deuterium profiles are measured with the Faraday cup between the injection magnet and the accelerator, while the tritium is counted after the accelerator with semiconductor detectors. Depth profiles have been measured for carbon samples which had been exposed to the D,D plasma at the first wall of the Garching fusion experiment ASDEX-Upgrade and from the European fusion experiment JET, Culham/UK, which had been operated part time with a D,T plasma. The tritium contents of the samples from JET were up to six orders higher compared to the samples from ASDEX-Upgrade. The problem of the detector overloading during measurements of samples with a medium tritium content has been solved by installation of a scanning system in the AMS beamline, which enables defined scanning of the tritium beam over an aperture in front of the detector. The tritium beam current from samples with high tritium content has been measured directly in the Faraday cup before the accelerator. A dedicated AMS facility with an air-insulated 100 kV tandem accelerator is under construction.

Keywords: Electrostatic Accelerators; Mass Spectrometry; Tritium; Fusion

  • Nuclear Instruments and Methods B 172 (2000) 655-658

Permalink: https://www.hzdr.de/publications/Publ-2372
Publ.-Id: 2372


Photo-and electroluminescence from Ge implanted SiO2 films

von Borany, J.; Grötzschel, R.; Heinig, K.-H.; Markwitz, A.; Möller, W.; Rebohle, L.; Schmidt, B.; Skorupa, W.

  • Lecture (Conference)
    Gordon Conference, New Hampshire, USA, August 1997

Permalink: https://www.hzdr.de/publications/Publ-2371
Publ.-Id: 2371


Mikro- und Nanostrukturierung mit Ionenfeinstrahlen

Bischoff, L.; Hausmann, S.; Teichert, J.; von Borany, J.

  • Lecture (Conference)
    Messe Technologie-Dialog Mikrosystemtechnik/Neue Materialien, Gera, April 9, 1997
  • Lecture (Conference)
    Hannover Messe, April 1997 & Forschungsforum '97, Leipzig, Sept. 20, 1997

Permalink: https://www.hzdr.de/publications/Publ-2370
Publ.-Id: 2370


Maskenlose schreibende Ionenimplantation mit massensepatiertem FIB

Bischoff, L.

  • Lecture (Conference)
    19. Deutsches Nutzertreffen Ionenimplanation, Robert-Bosch GmbH, Reutlingen, April 24 - 25, 1997

Permalink: https://www.hzdr.de/publications/Publ-2369
Publ.-Id: 2369


Positron mobility in semi-insulating 4H-SiC

Beling, C. D.; Fung, S.; Cheung, S. H.; Ling, C. C.; Brauer, G.

  • Lecture (Conference)
    11th Int. Conf. on Positron Annihilation (ICPA-11), Kansas City, USA, May 25-30, 1997

Permalink: https://www.hzdr.de/publications/Publ-2368
Publ.-Id: 2368


Influence of surface roughness on measuring depth profiles and the total amount of implanted ions by RBS and ERDA

Behrisch, R.; Grigull, S.; Kreißig, U.; Grötzschel, R.

  • Lecture (Conference)
    13th Int. Conf. on Ion Beam Analysis (IBA-13), Lisboa, Portugal, Aug. 1997

Permalink: https://www.hzdr.de/publications/Publ-2367
Publ.-Id: 2367


Process simulation of sub-µm pattern formation by local oxidation of CoSi2/Si heterostructures

Antons, A.; Heinig, K.-H.; Mantl, S.

  • Lecture (Conference)
    Int. Workshop on Challenges in Predictive Process Simulation (ChiPPS '97), Wandlitz, Germany, Aug. 17 - 20, 1997

Permalink: https://www.hzdr.de/publications/Publ-2364
Publ.-Id: 2364


Atomic scale simulations based on classical molecular-dynamics and ab initio-methods: advantageous tools for understanding growth and properties of boron nitride

Albe, K.; Posselt, M.; Möller, W.

  • Lecture (Conference)
    Int. Workshop on Challenges in Predictive Process Simulation (ChiPPS '97), Wandlitz, Germany, Aug. 17 - 20, 1997

Permalink: https://www.hzdr.de/publications/Publ-2363
Publ.-Id: 2363


Molecular-dynamics simulations on boron nitride thin film deposition

Albe, K.; Möller, W.

  • Invited lecture (Conferences)
    10th Int. Conference on Surface Modification of Metals by Ion Beams, Gatlinburg, USA, September 22-26, 1997 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2362
Publ.-Id: 2362


Computersimulationen zur Schichtabscheidung von Bornitrid

Albe, K.; Möller, W.

  • Lecture (Conference)
    Frühjahrstagung der DPG, AK: Festkörperphysik, FB: Dünne Schichten, Münster, Germany, March 17-21, 1997

Permalink: https://www.hzdr.de/publications/Publ-2361
Publ.-Id: 2361


High-spin states in 205Rn: A new shears band structure?

Novak, J. R.; Beausang, C. W.; Amzal, N.; Casten, R. F.; Cata Danil, G.; Cocks, J. F. C.; Cooper, J. R.; Greenlees, P. T.; Hannachi, F.; Helariutta, K.; Jones, P.; Julin, R.; Juutinen, S.; Kankaanpaä, H.; Kettunen, H.; Krücken, R.; Kuusiniemi, P.; Leino, M.; Benyuan, L.; Muikku, M.; Savelius, A.; Socci, T.; Thomas, J. T.; Zamfir, N. V.; Zhang, J.-Y.; Frauendorf, S.

  • Physical Review C, Volume 59, Number 6, June 1999, R2989-R2992

Permalink: https://www.hzdr.de/publications/Publ-2360
Publ.-Id: 2360


Magnetic rotational bands in 108Sb

Jenkins, D. G.; Wadsworth, R.; Cameron, J.; Clark, R. M.; Fossan, D. B.; Hibbert, I. M.; Janzen, V. P.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Parry, C. M.; Sears, J. M.; Smith, J. F.; Frauendorf, S.

  • Physical Review C, Volume 58, Number 5, November 1998, 2703-2709

Permalink: https://www.hzdr.de/publications/Publ-2359
Publ.-Id: 2359


In-situ TEM study of the evolution of CoSi2 precipitates during annealing and ion irradiation

Palard, M.; Ruault, M. O.; Bernas, H.; Strobel, M.; Heinig, K.-H.

  • Contribution to external collection
    Proc. of the Royal Microscopical Society Conf. "Microscopy of Semiconducting Materials 1997"; Inst. Phys. Conf. Ser. 157 (1997) 501
  • Lecture (Conference)
    10th International Conference on Microscopy of Semiconducting Materials, Oxford, UK, April 7 - 10, 1997

Permalink: https://www.hzdr.de/publications/Publ-2358
Publ.-Id: 2358


TEM investigation of CxSi defects in C implanted silicon

Werner, P.; Eichler, S.; Mariani, G.; Kögler, R.; Skorupa, W.

  • Appl. Phys. Lett. 70 (1997) 252

Permalink: https://www.hzdr.de/publications/Publ-2357
Publ.-Id: 2357


Preparation, structure and properties of MoSx films

Weise, G.; Mattern, N.; Hermann, H.; Teresiak, A.; Bächer, I.; Brückner, W.; Bauer, H.-D.; Vinzelberg, H.; Reiss, G.; Kreißig, U.; Mäder, M.; Markschläger, P.

  • Thin Solid Films 298 (1997) 98

Permalink: https://www.hzdr.de/publications/Publ-2356
Publ.-Id: 2356


Generation of radiation defects in high resistivity silicon at cyclic irradiation and annealing

Verbitskaya, E. M.; Eremin, V. K.; Ivanov, A. M.; Li, Z.; Schmidt, B.

  • Fisika i Tekhnika Poluprovodnikov 31 (1997) 235

Permalink: https://www.hzdr.de/publications/Publ-2355
Publ.-Id: 2355


Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing

Verbitskaya, E. M.; Eremin, V. K.; Ivanov, A. M.; Li, Z.; Schmidt, B.

  • Semiconductors 31 (1997) 189

Permalink: https://www.hzdr.de/publications/Publ-2354
Publ.-Id: 2354


Aluminium implantation of p-SiC for ohmic contacts

Spieß, L.; Nennewitz, O.; Weishart, H.; Lindner, J.; Skorupa, W.; Romanus, H.; Erler, F.; Petzoldt, J.

  • Diamond and Rel. Mat. 6 (1997) 1414

Permalink: https://www.hzdr.de/publications/Publ-2353
Publ.-Id: 2353


Confirmation of the Shears Mechanism in Near-Spherical Tin Nuclei

Jenkins, D. G.; Wadsworth, R.; Cameron, J. A.; Clark, R. M.; Fossan, D. B.; Hibbert, I. M.; Janzen, V. P.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Parry, C. M.; Sears, J. M.; Smith, J. F.; Frauendorf, S.

  • Physical Review Letters, Volume 83, Number 3, 19 July 1999, 500-503

Permalink: https://www.hzdr.de/publications/Publ-2352
Publ.-Id: 2352


Preparation of CNx films by ion beam assisted filtered cathodic arc deposition

Spaeth, M.; Kühn, M.; Kreißig, U.; Richter, F.

  • Diamond and Rel. Mat. 6 (1997) 626

Permalink: https://www.hzdr.de/publications/Publ-2351
Publ.-Id: 2351


Fernüberwachung ukrainischer Kernkraftwerke (in Russisch)

in Russian

Beyer, M.; Carl, H.; Schumann, P.; Seidel, A.

Die zu Beginn der neunziger Jahre in der Ukraine praktizierte Überwachung der Kernkraftwerke ermöglichte der Genehmigungs- und Aufsichtsbehörde nur einen unzureichenden Zugang zu Informationen über den jeweils aktuellen betrieblichen Sicherheitszustand.
Deshalb wurde für den 5. Block des KKW Saporoshje (WWER-1000/W-320) ein modernes betriebliches Überwachungssystem als Pilotprojekt konzipiert, eingerichtet und Ende 1995 in den Probebetrieb überführt. Es ergänzt die vorhandenen betrieblichen Kontroll- und Überwachungseinrichtungen durch Einbeziehung moderner informationstechnischer Mittel. Das System ermöglicht schwerpunktmäßig eine kontinuierliche Beobachtung des Zustandes vom Block 5 bei Normalbetrieb und bei Betriebsstörungen bzw. Störfällen, so daß bei erkennbaren Abweichungen vom bestimmungsgemäßen Anlagenbetrieb frühzeitig durch Nachfrage und Anordnung darauf reagiert werden kann.
Ein ähnliches Überwachungssystem konnte 1998 für den ersten und zweiten Block des KKW Rovno (WWER-440/W-213) eingerichtet und an das Informations- und Krisenzentrum in Kiew angeschlossen werden.

Keywords: ukrainische Kernkraftwerke; KKW; Fernüberwachung

  • Atomnaja Technika sa rubeshom, Nr.8 (1999), page 3-8

Permalink: https://www.hzdr.de/publications/Publ-2350
Publ.-Id: 2350


Proton irradiation effects in silicon junction diodes and charge-coupled devices

Simoen, E.; Vanhellemont, J.; Alaerts, A.; Claeys, C.; Gaubas, E.; Kaniava, A.; Ohyama, H.; Sunaga, H.; Nashiyama, I.; Skorupa, W.

  • Radiation Phys.Chem. 50 (1997) 417

Permalink: https://www.hzdr.de/publications/Publ-2349
Publ.-Id: 2349


Synthesis of SiC microstructures in Si technology by high dose carbon implantation: Etch stop properties

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Calvo-Barrio, L.; Morante, J. R.; Esteve, J.; Acero, M. C.; Skorupa, W.; Kögler, R.

  • J. Electrochem. Soc. 144 (1997) 2211

Permalink: https://www.hzdr.de/publications/Publ-2348
Publ.-Id: 2348


Growth of buried oxide layers of SOI-structures by thermal oxidation of the top silicon layer

Schroer, E.; Hopfe, S.; Tong, Q.-Y.; Gösele, U.; Skorupa, W.

  • J. Electrochem. Soc. 144 (1997) 2205

Permalink: https://www.hzdr.de/publications/Publ-2347
Publ.-Id: 2347


SANS investigation of plasma-sprayed materials using double-crystal diffractometer

ŠAroun, J.; Eichhorn, F.; Hempel, A.; Lukas, P.; Kolman, B.; Neufuss, K.; Mikula, P.; Strunz, P.

  • Physica B234-236 (1997) 1011

Permalink: https://www.hzdr.de/publications/Publ-2346
Publ.-Id: 2346


Astatine-211 production at the Rossendorf cyclotron

Guratzsch, H.

The production of Astatine-211 with the 120 cm Rossendorf cyclotron U-120 has been going on for two decades. Natural Bismuth evaporated on an Aluminium backing, a specially constructed water cooled target-block, is irradiated by 28 MeV Alpha-particles: 209Bi(Alpha, 2n)211At. For safety reasons the beam current is limited to 10 µA. The irradiated target is transported to the user who extracts the Astatine by himself. He also prepares the target with Bismuth for the next irradiation.

Keywords: Isotope production; Astatine-211; cyclotron; target construction

  • Lecture (Conference)
    Meeting on 211-At in anti-cancer therapy, Ispra, June 7th / 8th, 1999

Permalink: https://www.hzdr.de/publications/Publ-2345
Publ.-Id: 2345


Shears Mechanism in the A ~ 110 Region

Clark, R. M.; Asztalos, S. J.; Busse, B.; Chiara, C. J.; Cromaz, M.; Deleplanque, M. A.; Diamond, R. M.; Fallon, P.; Fossan, D. B.; Jenkins, D. G.; Juutinen, S.; Kelsall, N.; Krücken, R.; Lane, G. J.; Lee, I. Y.; Macchiavelli, A. O.; Macleod, R. W.; Schmid, G.; Sears, J. M.; Smith, J. F.; Stephens, F. S.; Vetter, K.; Wadsworth, R.; Frauendorf, S.

  • Physical Review Letters, Volume 82, Number 16, 19 April 1999, 3220-3223

Permalink: https://www.hzdr.de/publications/Publ-2344
Publ.-Id: 2344


TEM characterization of carbon ion implantation into epitaxial Si1-xGex

Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; Calvo-Barrio, L.; Bachrouri, A.; Gonzalez-Varona, O.; Morante, J. R.; Kögler, R.; Skorupa, W.

  • Contribution to external collection
    Inst. Phys. Conf. Ser. 157 (1997) 419
  • Lecture (Conference)
    Int. Conf. on Microscopy of Semiconducting Materials, Oxford, England, April 1997

Permalink: https://www.hzdr.de/publications/Publ-2343
Publ.-Id: 2343


Härten von Edelstahl durch Stickstoff-Plasma-Immersions-Ionenimplantation

Richter, E.; Günzel, R.

  • Ingenieur-Werkstoffe 6 (1997) 44

Permalink: https://www.hzdr.de/publications/Publ-2342
Publ.-Id: 2342


Rotational alignment near N=Z and proton-neutron correlations

Frauendorf, S.; Sheikh, J. A.

  • Physical Review C, Volume 59, Number 3, March 1999, 1400-1404

Permalink: https://www.hzdr.de/publications/Publ-2341
Publ.-Id: 2341


Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behaviour of nitrogen implanted $-SiC films

Reichert, W.; Lossy, R.; Gonzalez Sirgo, M.; Obermeier, E.; Skorupa, W.

  • Diam. Relat. Mater. 6 (1997) 1445

Permalink: https://www.hzdr.de/publications/Publ-2340
Publ.-Id: 2340


Gas-sensor properties of SnO2 films implanted with gold and iron ions

Nomura, N.; Shiozawa, H.; Takada, T.; Reuther, H.; Richter, E.

  • J. Mat. Sci.: Materials in Electronics 8 (1997) 301

Permalink: https://www.hzdr.de/publications/Publ-2339
Publ.-Id: 2339


Fluorine profiles in achondrites and chondrites from antarctica by nuclear reaction analysis (NRA)

Noll, K.; Döbeli, M.; Tobler, L.; Grambole, D.; Krähenbühl, U.

  • Meteorites and Planet Sci. 32 (1997) A101

Downloads:

Permalink: https://www.hzdr.de/publications/Publ-2338
Publ.-Id: 2338


Electrical resistivity and positron lifetime studies of the Cu-Mn system

Nicht, E.-M.; Brauer, G.; Vostry, P.; Cieslar, M.; Blazek, P.

  • Nukleonika 42 (1997) 175

Permalink: https://www.hzdr.de/publications/Publ-2337
Publ.-Id: 2337


Positron annihilation spectroscopy, electrical resistivity, and microstructural transmission electron microscopy studies of the CuMn system

Nicht, E.-M.; Brauer, G.; Cieslar, M.; Vostry, P.

  • Mat. Sci. Forum 255-257 (1997) 572

Permalink: https://www.hzdr.de/publications/Publ-2336
Publ.-Id: 2336


Layered artefacts: Non-destructive characterization by PIXE and RBS

Neelmeijer, C.; Mäder, M.; Wagner, W.; Schramm, H.-P.

To identify paint layer arrangements and their elemental composition without sampling, the ion beam techniques PIXE/RBS are successfully applied on air.

Keywords: PIXE; RBS; proton beam on air; non-destructive analysis; paint layers

  • Optical Technologies in the Humanities, OWLS IV, ed. by D. Dirksen, G. von Bally, Springer, (1997) 105

Permalink: https://www.hzdr.de/publications/Publ-2335
Publ.-Id: 2335


Experimental determination of positron related surface characteristics of 6H-SiC

Nangia, A.; Kim, J. H.; Weiß, A. H.; Brauer, G.

  • Mat. Sci. Forum 255-257 (1997) 711
  • Lecture (others)
    American Physical Society Meeting, Kansas City, USA, March 1997
  • Lecture (Conference)
    11th Int. Conf. on Positron Annihilation (ICPA-11), Kansas City, USA, May 25-30,1997
  • Lecture (Conference)
    American Vacuum Society - Texas Chapter (Symp. on Electronic Materials, Processing and Characteri-zation), Austin, TX, USA, June 3 - 4, 1997

Permalink: https://www.hzdr.de/publications/Publ-2334
Publ.-Id: 2334


Plasma-Immersions-Ionenimplantation für große Oberflächen

Möller, W.; Günzel, R.; Mändl, S.; Richter, E.

  • JOT 37 (1997) II-IV

Permalink: https://www.hzdr.de/publications/Publ-2333
Publ.-Id: 2333


Sensitization of silicon nitride surfaces for Ag+ ions by ion implantation

Möller, D.; Pham, M. T.; Hüller, J.

  • Sensors and Actuators B43 (1997) 110

Permalink: https://www.hzdr.de/publications/Publ-2332
Publ.-Id: 2332


X-ray diffraction investigations of NdGaO3 single crystals

Mazur, K.; Sass, J.; Giersz, W.; Schell, N.

  • Acta Physica Polonica A92 (1997) 226

Permalink: https://www.hzdr.de/publications/Publ-2331
Publ.-Id: 2331


Defects in detwinned LaGaO3 substrates

Mazur, K.; Fink-Finowicki, J.; Berkowski, M.; Schell, N.

  • Acta Physica Polonica A92 (1997) 205

Permalink: https://www.hzdr.de/publications/Publ-2330
Publ.-Id: 2330


Doping of 3C-SiC by implantation of nitrogen at high temperatures

Lossy, R.; Reichert, W.; Obermeier, E.; Skorupa, W.

  • J. Electronic Materials 26 (1997) 123

Permalink: https://www.hzdr.de/publications/Publ-2329
Publ.-Id: 2329


Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy

Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.

  • Appl. Phys. Lett. 70 (1997) 2696

Permalink: https://www.hzdr.de/publications/Publ-2328
Publ.-Id: 2328


Application of the ECR slot antenna plasma source for ion implantation

Korzec, D.; Raiko, V.; Engemann, J.; Günzel, R.; Brutscher, J.; Möller, W.

  • Surf. Coat. Technol. 93 (1997) 217

Permalink: https://www.hzdr.de/publications/Publ-2327
Publ.-Id: 2327


Metal gettering by defective regions in carbon-implanted silicon

Kögler, R.; Kaschny, J. R.; Yankov, R. A.; Werner, P.; Danilin, A. B.; Skorupa, W.

  • Solid State Phenomena 57/58 (1997) 63

Permalink: https://www.hzdr.de/publications/Publ-2326
Publ.-Id: 2326


Observation of a (nü7/2-[514])2 crossing 180Os

Lieder, R. M.; Venkova, T.; Utzelmann, S.; Gast, W.; Schnare, H.; Spohr, K.; Hoernes, P.; Georgiev, A.; Bazzacco, D.; Menegazzo, R.; Rossi-Alvarez, C.; de Angelis, G.; Kaczarowski, R.; Rzaca-Urban, T.; Morek, T.; Marti, G. V.; Maier, K. H.; Frauendorf, S.

  • Nuclear Physics A 645 (1999) 465-491

Permalink: https://www.hzdr.de/publications/Publ-2325
Publ.-Id: 2325


Amorphization and crystallization effects in high-dose zinc-implanted silicon

Kalitzova, M.; Simov, S.; Yankov, R. A.; Angelov, C.; Vitali, G.; Rossi, M.; Pizzuto, C.; Zollo, G.; Fauré, J.; Killian, K.; Bonhomme, P.; Voelskow, M.

  • J. Appl. Phys. 81 (1997) 1143

Permalink: https://www.hzdr.de/publications/Publ-2323
Publ.-Id: 2323


Annealing effects in light emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

Kachurin, G. A.; Zhuravlev, K. S.; Pazdnikov, N. A.; Leyer, A. F.; Tyschenko, I. E.; Volodin, V. A.; Skorupa, W.; Yankov, R. A.

  • Nucl. Instr. Meth. B127/128 (1997) 583

Permalink: https://www.hzdr.de/publications/Publ-2322
Publ.-Id: 2322


Visible and near-infrared luminescence from Si nanostructures formed by ion implantation and pulse annealing

Kachurin, G. A.; Tyschenko, I. E.; Zhuravlev, K. S.; Pazdnikov, N. A.; Volodin, V. A.; Gutakovsky, A. K.; Leier, A. F.; Skorupa, W.; Yankov, R. A.

  • Nucl. Instr. Meth. B122 (1997) 571

Permalink: https://www.hzdr.de/publications/Publ-2321
Publ.-Id: 2321


Crystal-GRID investigations of atomic collision cascades in ionic compounds

Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Doll, C.

  • Mat. Sci. Forum 248-249 (1997) 49

Permalink: https://www.hzdr.de/publications/Publ-2320
Publ.-Id: 2320


Void formation in Ge induced by high energy heavy ion irradiation

Huber, H.; Assmann, W.; Karamian, S. A.; Mücklich, A.; Prusseit, W.; Gazis, E.; Grötzschel, R.; Kokkoris, M.; Kossionidis, E.; Mieskes, H. D.; Vlastou, R.

  • Nucl. Instr. Meth. B122 (1997) 542

Permalink: https://www.hzdr.de/publications/Publ-2319
Publ.-Id: 2319


Void formation and surface rippling in Ge induced by high energetic Au irradiation

Huber, H.; Assmann, W.; Grötzschel, R.; Mieskes, H. D.; Mücklich, A.; Nolte, H.; Prusseit, W.

  • Mat. Sci. Forum 248/249 (1997) 301

Permalink: https://www.hzdr.de/publications/Publ-2318
Publ.-Id: 2318


Pressure/composition isotherms of proton conducting SrYb0.05Zr0.95O2.975/H2O by means of nuclear resonance reaction analysis

Hempelmann, R.; Eschenbaum, J.; Altmayer, M.; Groß, B.; Grambole, D.; Herrmann, F.; Nagengast, D.; Krauser, J.; Weidinger, A.

Films of SrYb0.05Zr0.095O2.975 were prepared by sol-gel processing. Water vapour pressure/hydrogen composition isotherms were recorded ex-situ comprising
pressures between 0 and 84.5 kPa and temperatures between 873 and 1073 K. Nuclear Resonance Reaction Analysis (NRRA) was used to determine the
hydrogen concentration and, in addition, depth profiles of hydrogen concentration. The chemical potential of interstitial hydrogen in oxides could be determined; from
its temperature dependence thermodynamical constants were calculated. We observe two hydrogen fractions with a site energy difference of 20 kJ/mol. A size effect
of the thermodynamic properties is observed below a thickness of 350 nm: nanofilms exhibit higher solubility than bulk material.

Keywords: absorption; materials properties; thermodynamics; solid proton conductor

  • Ber. Bunsenges. Phys. Chemie 101 (1997) 985 No. 7

Permalink: https://www.hzdr.de/publications/Publ-2317
Publ.-Id: 2317


Range and damage distribution in ultra low energy boron ion implantation

Hatzopoulos, N.; Suder, S.; van den Berg, J. A.; Donelly, S. E.; Armour, D. G.; Panknin, D.; Fukarek, W.; Frey, L.; Foad, M. A.; Moffat, S.; Bailey, P.; Naakes, C. T. Q.

  • Contribution to external collection
    Proc. 11th Int. Conf. Ion Implantation Technology; The Institute of Electrical and Electronics Engineers, Piscataway, USA, 1997, p. 527

Permalink: https://www.hzdr.de/publications/Publ-2316
Publ.-Id: 2316


Formation and characterisation of Si/SiO2 multilayer structures by oxygen implantation into silicon

Hatzopoulos, N.; Siapkas, D. I.; Hemment, P. L. F.; Skorupa, W.

  • J. Appl. Phys. 80 (1996) 4960

Permalink: https://www.hzdr.de/publications/Publ-2315
Publ.-Id: 2315


On the presence of molecular nitrogen in nitrogen-implanted amorphous carbon

Grigull, S.; Jacob, W.; Henke, D.; Mücklich, A.; Späth, C.; Sümmchen, L.

  • Appl. Phys. Lett. 70 (1997) 1387

Permalink: https://www.hzdr.de/publications/Publ-2314
Publ.-Id: 2314


Overpressurized bubbles versus voids in helium implanted and annealed silicon

Fichtner, P. F. P.; Kaschny, J. R.; Yankov, R. A.; Mücklich, A.; Kreißig, U.; Skorupa, W.

  • Appl.Phys.Lett. 70 (1997) 732

Permalink: https://www.hzdr.de/publications/Publ-2312
Publ.-Id: 2312


Long term instabilities in the defect assembly in irradiated high resistivity silicon detectors

Eremin, V.; Ivanov, A.; Verbitskaya, E.; Li, Z.; Schmidt, B.

  • IEEE Trans. Nucl. Sci. 44 (1997) 819

Permalink: https://www.hzdr.de/publications/Publ-2311
Publ.-Id: 2311


Effects of pulse-irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam

Dvurechenskii, A. V.; Zinovyev, A.; Makarov, V. V.; Grötzschel, R.; Heinig, K.-H.

  • JETP Letter 64 (1996) 242

Permalink: https://www.hzdr.de/publications/Publ-2310
Publ.-Id: 2310


Wear improvement of silicate glass surfaces by ion implantation

Deshkovskaya, A. A.; Richter, E.

  • Surf. Coat. Technol. 93 (1997) 150

Permalink: https://www.hzdr.de/publications/Publ-2309
Publ.-Id: 2309


Modifizierung von Polymeroberflächen durch Ionenimplantation

Chudoba, T.; Zschiesche, R.; Uhlmann, K.

  • JOT 37 (1997) VI-VIII

Permalink: https://www.hzdr.de/publications/Publ-2308
Publ.-Id: 2308


Experimental determination of positronic and electronic characteristics of 3C-SiC

Brauer, G.; Anwand, W.; Nicht, E.-M.; Coleman, P. G.; Wagner, N.; Wirth, H.; Skorupa, W.

  • Appl. Surf. Sci. 116 (1997) 19

Permalink: https://www.hzdr.de/publications/Publ-2306
Publ.-Id: 2306


Positron mobility in semi-insulating 4H-SiC

Beling, C. D.; Fung, S.; Cheung, S. H.; Gong, M.; Ling, C. C.; Hu, Y. F.; Brauer, G.

  • Mat. Sci. Forum 255-257 (1997) 260

Permalink: https://www.hzdr.de/publications/Publ-2304
Publ.-Id: 2304


An EPR study of defects induced in 6H-SiC by ion implantation

Barklie, R. C.; Collins, M.; Holm, B.; Pacaud, Y.; Skorupa, W.

  • J. Electronic Materials 26 (1997) 137

Permalink: https://www.hzdr.de/publications/Publ-2303
Publ.-Id: 2303


Heavy-Ion induced effects in Ge crystal damage at the 100 MeV energy range

Assmann, W.; Huber, H.; Mieskes, H. D.; Nolte, H.; Gazis, E.; Kokkoris, M.; Kossionides, S.; Vlastou, R.; Grötzschel, R.; Mücklich, A.; Prusseit, W.; Karamian, S. A.

  • Nucl. Instr. Meth. B 122 (1997) 250

Permalink: https://www.hzdr.de/publications/Publ-2302
Publ.-Id: 2302


Investigations of the transition region between Si and thermally grown SiO2 layers

Anwand, W.; Brauer, G.; Coleman, P. G.; Goodyear, A.; Reuther, H.; Maser, K.

  • J. Phys.: Condens. Matter 9 (1997) 2947

Permalink: https://www.hzdr.de/publications/Publ-2301
Publ.-Id: 2301


Nanostructured arrays formed by finely focused ion beams

Zuhr, R. A.; Budai, J. D.; Datskos, P. G.; Meldrum, A.; Thomas, K. A.; Warmack, R. J.; White, C. W.; Feldman, L. C.; Strobel, M.; Heinig, K.-H.

  • Lecture (Conference)
    MRS Fall Meeting, Boston, USA, Nov. 30 - Dec. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2300
Publ.-Id: 2300


Stabilisation of the 3C-SiC/SOI system by an intermediate Si3N4 layer

Zappe, S.; Obermeier, E.; Stoemenos, J.; Möller, H.; Krötz, G.; Wirth, H.; Skorupa, W.

  • Lecture (Conference)
    ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2299
Publ.-Id: 2299


Ion-implantation induced damage In 6H-SiC: the influence of substrate temperature

Wirth, H.; Anwand, W.; Mücklich, A.; Panknin, D.; Voelskow, M.; Brauer, G.; Skorupa, W.; Gonzalez-Varona, O.; Perez-Rodriguez, A.

  • Lecture (Conference)
    40th Electronic Materials Conference (EMC'98), Charlottesville, Virginia, USA, June 24-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2298
Publ.-Id: 2298


Similarity of energetic depositions of cubic boron nitride and titanium nitride thin films

Wang, X.; Kolitsch, A.; Zhao, J. P.; Möller, W.

  • Lecture (Conference)
    MRS Fall Meeting 1998, Boston, USA, Nov. 30 - Dec.4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2297
Publ.-Id: 2297


Study of Interatomic Potentials in ZnS - Crystal-GRID Experiments versus ab initio Calculations

Koch, T.; Heinig, K.-H.; Jentschel, M.; Börner, H. G.

Crystal-GRID measurements have been performed with ZnS single crystals. For the first time, an asymmetric Crystal-GRID line shape could be observed. The preliminary data evaluation indicates that the reported lifetime of the 3221 keV level in 33 is too short. A value of about 60 fs has been found. Due to this ``long'' lifetime the line shape is much less structured than calculated with the reported lifetime.

Keywords: atomic collisions; Crystal-GRID; gamma ray spectroscopy; interatomic potentials; Molecular Dynamics simulations; nuclear lifetimes; ZnS

  • Lecture (Conference)
    Applications of high-precision gamma-spectroscopy, Notre Dame, USA, July 1-3, 1998
  • J. Res. Natl. Inst. Stand. Technol. 105 (2000) 81-87

Permalink: https://www.hzdr.de/publications/Publ-2296
Publ.-Id: 2296


Tiefenselektive Phasenanalyse Si-ionenimplantierter "-Fe-Oberflächen mittels DCEMS

Walterfang, M.; Kruijer, S.; Keune, W.; Dobler, M.; Reuther, H.

  • Lecture (Conference)
    DPG-Frühjahrstagung, Regensburg, March 23-27,1998

Permalink: https://www.hzdr.de/publications/Publ-2295
Publ.-Id: 2295


Potential investigation for ZnS using Crystal-GRID high-precision gamma spectroscopy and MD computer simulations

Hauschild, T.; Heinig, K.-H.; Jentschel, M.; Börner, H. G.

Crystal-GRID is a new and complementary method for studying interatomic potentials in crystals at intermediate energies between 1 eV and 1 keV. After a neutron capture reaction a first photon emission leads to a recoil of the still excited nucleus. While moving through the crystal a second photon is emitted. When observing many recoil events a structured and Doppler broadened gamma line shape is obtained due to the anisotropic slowing down in the crystal. Experimental findings from the high-precision gamma spectrometers GAMS 4 and GAMS 5 at the ILL are compared to predictions from molecular dynamics (MD) simulations. Thereby information about the interatomic potential can be obtained. Results will be presented for ZnS single crystals, showing that the universal screened Coulomb potentials (ZBL, KrC) are not appropriate in the examined energy region. A new potential for that region will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS

  • Lecture (Conference)
    DPG Frühjahrstagung, Münster, Germany, March 22-26, 1999

Permalink: https://www.hzdr.de/publications/Publ-2294
Publ.-Id: 2294


Electron energy-loss spectroscopy in transmission of undoped and doped diamond films

Waidmann, S.; Bartsch, K.; Endler, I.; Fontaine, F.; Arnold, B.; Knupfer, M.; Leonhardt, A.; Fink, J.

  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2293
Publ.-Id: 2293


Surface modification of AISI M2 steel by nitrogen plasma immersion ion implantation

Uglov, V. V.; Rusalsky, D. P.; Kholmetskii, A. L.; Khodasevich, V. V.; Ruebenbauer, K.; Günzel, R.; Richter, E.; Wilbur, P.; Wei, R.

  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2292
Publ.-Id: 2292


Effect of hydrostatic pressure annealing on visible photoluminescence from Si+- and Ge+-implanted SiO2 films

Tyschenko, I. E.; Kachurin, G. A.; Zhuravlev, K. S.; Rebohle, L.; Skorupa, W.

  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2291
Publ.-Id: 2291


Room temperature visible photoluminescence from Ar+- and Ge+-implanted Si3N4- and SiOxNy-films

Tyschenko, I. E.; Kachurin, G. A.; Rebohle, L.; Skorupa, W.

  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2290
Publ.-Id: 2290


Ion Beam Mixing of the ZrO2/Fe System

Turos, A.; Gawlik, D.; Jagielski, J.; Stonert, A.; Matz, W.; Grötzschel, R.

  • Lecture (Conference)
    11Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2289
Publ.-Id: 2289


Thermal wave analysis: a tool for non-invasive testing ion beam synthesis of wide band gap materials

Teichert, G.; Schleicher, L.; Knedlik, C.; Voelskow, M.; Skorupa, W.; Yankov, R. A.; Pezoldt, J.

  • Lecture (Conference)
    MRS Fall Meeting., Boston, USA, Nov. 30 - Dec. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2288
Publ.-Id: 2288


Computer simulation studies of the competition between nucleation and ion mixing in ion beam synthesis of nanoclusters

Strobel, M.; Heinig, K.-H.; Möller, W.

  • Lecture (Conference)
    4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan, Sept. 15-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2287
Publ.-Id: 2287


In vitro Charakterisierung modifizierter ionenimplantierter Titanoberflächen

Stölzel, M.; Born, R.; Scharnweber, D.; Worch, H.; Pham, M. T.; Wieser, E.

  • Lecture (Conference)
    Werkstoffwoche, München, Germany, Oct. 12-15, 1998

Permalink: https://www.hzdr.de/publications/Publ-2286
Publ.-Id: 2286


The behaviour of hydrogen in titanium after ion implantation

Soltani-Farshi, M.; Baumann, H.; Richter, E.; Kreißig, U.; Bethge, K.

  • Lecture (Conference)
    CAARI´98, Denton, USA, December 1998

Permalink: https://www.hzdr.de/publications/Publ-2285
Publ.-Id: 2285


Positron studies of defects in nitrogen and carbon implanted titanium

Soltani-Farshi, M.; Baumann, H.; Anwand, W.; Brauer, G.; Coleman, P. G.; Richter, E.; Kreißig, U.; Bethge, K.

  • Lecture (Conference)
    1998 Spring Meeting, San Francisco/CA, April 13-17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2284
Publ.-Id: 2284


Wave-ordered nanostructures formed on silicon-on-insulator wafers by means of reactive ion beams

Smirnov, V. K.; Kibalov, D. S.; Krivlevich, S. A.; Lepshin, P. A.; Potapov, E. V.; Ynakov, R. A.; Skorupa, W.; Danilin, A. B.; Makarov, V. V.

  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2283
Publ.-Id: 2283


Crystal-GRID: Current status and prospects for experimental studies of atomic collisions in solids.

Jentschel, M.; Hauschild, T.; Börner, H. G.; Heinig, K.-H.

The Doppler effect of electromagnetic radiation represents a very direct indicator to study the motion of emitting particles. In the Crystal-GRID technique one uses the ultra high resolution power of the crystal spectrometers GAMS4 and GAMS5 to measure the Doppler broadening of $\gamma$ radiation emitted from excited nuclei. Thus it represents a new nuclear probe for the direct study of atomic motion in solids at kinetic energies of several hundreds of eV.

A detailed description of the experimental technique will be given together with an overview on already performed experiments using massive single crystals
of TiO2, NaCl, Ni and Cr. In these experiments the comparison of experimental data to predictions deduced from Molecular Dynamics simulations has allowed to obtain new repulsive interatomic potentials.

The currently used double flat crystal geometry of the spectrometers has allowed to use only massive targets. Recent technical improvements of the GAMS5 spectrometer towards a double bent crystal geometry
will allow to extend the technique to studies of crystalline layers as they may result from ion implantation. The current status of the spectrometer and the expected capabilities will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; TiO2; NaCl; Ni; Cr

  • Poster
    ICACS-18, Odense, Denmark, August 3-8, 1999

Permalink: https://www.hzdr.de/publications/Publ-2281
Publ.-Id: 2281


Study of Interatomic Potentials in ZnS using Crystal-GRID high-precision gamma spectroscopy and MD simulations

Hauschild, T.; Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Möller, W.

Crystal-GRID measurements have been performed with ZnS single crystals. A new Crystal-GRID potential could be determined by splining a Stillinger-Weber like equilibrium potential to screened Coulomb potentials. The new potential is fitted to experimental data containing information about the energy range of about 10 to 500 eV and differs significantly from the screened Coulomb potentials. The nuclear level life time of the 3221 keV level in 33S has been determined to be (48.8 +/- 0.7) fs. Furthermore the predicted asymmetry of a Crystal-GRID line shape could be observed for the first time.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS

  • Lecture (Conference)
    ICACS-18, Odense, Denmark, August 3-8, 1999

Permalink: https://www.hzdr.de/publications/Publ-2280
Publ.-Id: 2280


Ion beam processing for silicon-based light emission

Skorupa, W.

  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2279
Publ.-Id: 2279


Beta-SiC on SiO2 formed by ion implantation and bonding for micromechanical applications

Serre, C.; Romano-Rodriguez, A.; Perez-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Kögler, R.; Skorupa, W.

  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2278
Publ.-Id: 2278


Bonding and etch-back of ion beam synthesized beta-SiC for SiCOI formation

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Esteve, J.; Kögler, R.; Skorupa, W.

  • Lecture (Conference)
    NATO Advanced Workshop "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", Kiev, Ukraine, Oct. 1998

Permalink: https://www.hzdr.de/publications/Publ-2277
Publ.-Id: 2277


Characterisation of Al-implanted LiF by a monoenergetic positron beam

Sendezera, E. J.; Davidson, A. T.; Fischer, C. G.; Connell, S. H.; Sellschop, J. P. F.; Anwand, W.; Brauer, G.; Nicht, E.-M.

  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998

Permalink: https://www.hzdr.de/publications/Publ-2276
Publ.-Id: 2276


Non-destructive analysis of elements with low atomic numbers (Na – K) in artifacts using X-ray fluorescence analysis

Schreiner, M.; Mantler, M.; Neelmeijer, C.; Mäder, M.

  • Lecture (Conference)
    31th Int. Symp. on Archaeometry, Budapest, Hungary, April 27 - May 1, 1998

Permalink: https://www.hzdr.de/publications/Publ-2275
Publ.-Id: 2275


Temperaturverhalten von durch Hochdosisimplantation hergestellten Al-Fe-Legierungen

Reuther, H.

  • Lecture (Conference)
    IX. Mößbauerkolloquium, Freiberg, Sept. 28-30, 1998

Permalink: https://www.hzdr.de/publications/Publ-2274
Publ.-Id: 2274


Charakterisierung von durch Ionenimplantation hergestellten Fe-Al-Schichten mittels Augerelektronen- und Mößbauerspektroskopie

Reuther, H.

  • Lecture (Conference)
    10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998

Permalink: https://www.hzdr.de/publications/Publ-2273
Publ.-Id: 2273


Strong blue electroluminescence from Ge-rich silicondioxide-on-silicon formed by ion beam synthesis

Rebohle, L.; von Borany, J.; Tyschenko, I. E.; Skorupa, W.

  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2272
Publ.-Id: 2272


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