Dr. Ahmad Echresh

Cleanroom Manager
Postdoctoral researcher
Nanofabrication and Analysis
Phone: +49 351 260 3893

Dr. Ciaran Fowley

Head Nanofabrication and Analysis
Phone: +49 351 260 3253

Thin Film Deposition

For thin layer deposition only physical vapour deposition (PVD) techniques with low thermal and radiation substrate stress are used. DC- and RF- high-rate magnetron sputtering, electron beam evaporation and evaporation from thermally heated crucibles are available.

The reactive sputter technique offers the advantage to deposit on substrates compound layers (oxides, oxynitrides, nitrides) from elemental sputter targets by mixing Ar with reactive gases of O2 and/or N2 . Direct sputtering from insulating targets is also possible using the RF-sputtering mode. Heating or cooling of the substrate, bias sputtering and sputter etching also can be applied. The sputter apparatus is equipped with a residual gas analyzer and two optical emission spectrometers to control the residual gas composition and the plasma parameters respectively.

Sputter facility NORDIKO 2000 (NORDIKO Ltd.)

Options 4 magnetrons (target diameter 200 mm)
2 magnetrons operate in the DC-mode
2 magnetrons operate in the DC- or RF-mode
Max. Power PDC =5 kW
PRF =2 kW 

Process gasses

Ar or Ar+7%H2
Reactive gasses O2, N2
Substrate/target distance 55...130 mm
Max. Substrate diameter 200 mm
Substrate thickness < 25 mm
Currently used targets Al(5N), Al(1.5% Si), poly-Si, SiO2/Ge, Ta(3N) for deposition of Al, SiO2, Si- and Ge-rich SiO2-layers, Ta and Ta2O5
Operating modes Automatic mode, manual mode
Additional equipment
  • substrate heating (100 < T(°C) < 500)
  • substrate cooling (15 °C)
  • LN2 trap
Process monitoring
  • Residual gas analyzer MPS (FERRAN Scientific)
  • 2 optical emission spectrometers VM 3000 (VERITY Instr.)
  • reactive sputter process controller (MEGATECH) für reactive Sputterprozesse (MEGATECH)
Wafer load system Single wafer load lock

Evaporation facility CREAMET 600 ebeam (Creavac GmbH)


2 thermal evaporators

1 electron beam evaporator (12 pockets with 4cm³ crucibles)

1 Kaufmann ion source for surface cleaning

Max. Power

Pe-gun = 10 kW

Pthermal = 2 kW

Evaporator-substrate distance

250 mm, 450 mm

(designed for lift-off processes)

Max. Substrate diameter

100 mm

Substrate thickness < 25 mm
Evaporation materials Al(5N), Au(5N), Cr, Ni, Ta, Ge, B, …
Operating modes

Automatic mode, manual mode

Process monitoring

Inficon SQC-310C automated co-deposition controller

WARP ebeam evpaorator power supply

Beamtek evaporation controller