Thermal Processing

Thermal processes are used for thermal oxidation of silicon, annealing of radiation damage after ion  beam treatment and for electrical activation of dopants as well as for drive-in-diffusion after ion implantation. For this purpose the following facilities are available.

INOTHERM Quartz Tube Thermal Diffusion Oven

Operating temperature 300...1150 °C
Process gases

O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2
(all of 5.0 purity)
Wafer diameter max. 150 mm
Wafer quantity max. 50
Processes

Dry oxidation

 Growth of high quality gate oxides, dox = (10...360) nm
Gases: dry O2, dry O2+3% HCl
Temperature range: (900...1100) °C

Wet oxidation

Growth of thick field oxides, dox= (200...1500) nm
Gases: wet O2
Temperature range: (900...1150) °C
 Annealing Annealing of radiation defects after ion implantation
Drive-in-diffusion after implantation
Metal contact forming
Gases: N2, Ar, N2+5%H2, Ar+7% H2
Temperature range: (300...1150) °C

Allwin AccuThermo AW610 Rapid Thermal Processing

System Two-wall and DI-water cooled quarz chamber
Wafer diameter max. 100 mm
Wafer quantity Single wafer tray
Processes Rapid thermal annealingof radiation defects after ion implantation with minimized broadening and in-diffusion of implanted profiles.
Rapid thermal oxydation with dox < 20 nm , nitridation and silicide forming.
Gases: N2, Ar, O2, N2+5%H2 or Ar+7%H2 all of 5.0 purity
Temperature range: 400 °C to 1200 °C
Processing time: 5 s to 300 s