Contact

Dr. Ahmad Echresh

Cleanroom Manager
Postdoctoral researcher
Nanofabrication and Analysis
a.echreshAthzdr.de
Phone: +49 351 260 3893

Dr. Ciaran Fowley

Head Nanofabrication and Analysis
c.fowleyAthzdr.de
Phone: +49 351 260 3253

Thermal Processing

Thermal processes are used for thermal oxidation of silicon, annealing of radiation damage after ion  beam treatment and for electrical activation of dopants as well as for drive-in-diffusion after ion implantation. For this purpose the following facilities are available.

Horizontal Furnace with three quartz tubes, (INOTHERM)

Operating temperature 300...1150 °C
Process gases

O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2
(all of 5.0 purity)

Wafer diameter max. 150 mm
Wafer quantity max. 25
Processes

Dry oxidation

Growth of high quality gate oxides, dox = (10...250) nm
Gases: dry O2, dry O2+3% HCl
Temperature range: (900...1100) °C

Wet oxidation

Growth of thick field oxides, dox= (200...1500) nm
Gases: wet O2
Temperature range: (900...1150) °C

 Annealing Annealing of radiation defects after ion implantation
Drive-in-diffusion after implantation
Metal contact forming
Gases: N2, Ar, N2+5%H2, Ar+7% H2
Temperature range: (300...1150) °C

Horizontal Furnace with three quartz tubes, DA62 (ELEKTROMAT)

Operating temperature 300...1150 °C
Process gases

O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2
(all of 5.0 purity)

Wafer diameter max. 100 mm
Wafer quantity max. 50
Processes

Dry oxidation

Growth of high quality gate oxides, dox = (10...250) nm
Gases: dry O2, dry O2+3% HCl
Temperature range: (900...1100) °C

Wet oxidation

Growth of thick field oxides, dox= (200...1500) nm
Gases: wet O2
Temperature range: (900...1150) °C

 Annealing Annealing of radiation defects after ion implantation
Drive-in-diffusion after implantation
Metal contact forming
Gases: N2, Ar, N2+5%H2, Ar+7% H2
Temperature range: (300...1100) °C

Rapid Thermal Processing Facility Allwin AccuThermo AW 610

System Two-wall and DI-water cooled quarz chamber
Wafer diameter max. 100 mm
Wafer quantity Single wafer load lock system
Processes Rapid thermal annealingof radiation defects after ion implantation with minimized broadening and in-diffusion of implanted profiles.
Rapid thermal oxydation with dox < 20 nm , nitridation and silicide forming.

Gases: N2, Ar, O2 , all of 5.0 purity
Temperature range: (474...1200) °C
Processing time: (0.5...5) min