Contact

Dr. Shengqiang Zhou

Head Semiconductor Material­s
Head
s.zhouAthzdr.de
Phone: +49 351 260 2484

Dr. Lars Rebohle

l.rebohleAthzdr.de
Phone: +49 351 260 3368

We are continuously looking for Bacholar or Master (Diploma) students.

News from FWIM

02.02.2022 | Our paper on Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon being published at Nanoscale

24.11.2021 | Our paper on Chlorine doping of MoSe2 flakes by ion implantation being published at Nanoscale

24.11.2021 | Our paper on B20–MnSi films grown on Si(100) substrates with magnetic skyrmion signature being published at Materials Today Physics

01.10.2021 | Our paper on Enhanced Trion Emission in Monolayer MoSe2 by Constructing a Type-I Van Der Waals Heterostructure being published at Advanced Functional Materials

19.09.2021 | Juanmei Duan won the Graduate Student Awards in the E-MRS 2021 Fall Meeting! Congratulations!

19.08.2021 | Our paper on Increased dephasing length in heavily doped GaAs being published at New J. Phys.

09.08.2021 | Our paper on Strain-induced switching between noncollinear and collinear spin configuration in magnetic Mn5Ge3 films being published at Phys. Rev. B

08.04.2021 | Our paper on Phase Selection in Mn–Si Alloys by Fast Solid-State Reaction with Enhanced Skyrmion Stability being published at Advanced Functional Materials

Department of Semiconductor Materials (FWIM)

The department is concerned with the synthesis and modification of advanced materials for opto-electronics and quantum technology by ion beams and by millisecond flash lamp/nanosecond pulsed laser. It is equipped with tools for ultra-fast annealing and thin film deposition as well as with cutting-edge devices for the electrical, optical and magnetic investigation of materials. The research work is performed in close collaboration with other departments at the HZDR including the Ion Beam Center (IBC), ELBE and the High Magnetic Field Lab.

Research topics

Foto: Hyperdoping

Hyper-doping semiconductors

Foto: Antenna

Infrared Optoelectronics

Foto: Defect engineering

Defect engineering by ions

Foto: Defects in SiC

Hybrid quantum technologies with atom-scale defects

Foto: Quantum Metrology

Quantum metrology with topological materials

Foto: FLA and PLA

Flash lamp and pulsed laser annealing


Third party projects:

  • DFG: Room-temperature broadband MIR photodetector based on Si:Te for wafer-scale integration, start from 2020
  • BMBF "ForMikro": Group IV heterostructures for high performance nanoelectronic devices (SiGeSn NanoFETs), start from 2020
  • Helmholtz Innovation Lab blitzlab for ultra-short time annealing, start 02/20
  • DFG-DACH: Quantum control of single spin centers in silicon carbide coupled to optical microcavities, start from 2019
  • DFG: 3D tailoring of all-oxide heterostructures by ion beams (3D-Domino), start from 2019
  • DFG: Doping by means of FLA and ALD, start 2018
  • Humboldt Research Fellowship for Postdoctoral Researchers, Y. Berencén, 06/16 – 05/19
  • SAB project SiNERGY, 09/17 – 09/19
  • DECHEMA

Contact

Dr. Shengqiang Zhou

Head Semiconductor Material­s
Head
s.zhouAthzdr.de
Phone: +49 351 260 2484

Dr. Lars Rebohle

l.rebohleAthzdr.de
Phone: +49 351 260 3368