Department of Semiconductor Materials (FWIM)

The department is concerned with the synthesis and modification of advanced materials for opto-electronics and quantum technology by ion beams and by millisecond flash lamp/nanosecond pulsed laser. It is equipped with tools for ultra-fast annealing and thin film deposition as well as with cutting-edge devices for the electrical, optical and magnetic investigation of materials. The research work is performed in close collaboration with other departments at the HZDR including the Ion Beam Center (IBC), ELBE and the High Magnetic Field Lab.

Research topics

Doping and Defect Engineering by Ions

Group leader: Dr. Shengqiang Zhou

Quantum Photonics & Optoelectronics

Group leader: Dr. Yonder Berencen

Semiconductors for Energy and Environment

Group leader: Dr. Slawomir Prucnal

Flash Lamp and Pulsed Laser Annealing

Group leader: Dr. Lars Rebohle

Third party projects:

• DFG: Millisecond crystallization phenomena in semiconductors during flash lamp annealing investigated using in situ synchrotron X-ray techniques, start 2027
• EU-MSCA: Quantum Electrodynamics with Silicon Nanotechnology (QUEST), start 10/2026
• SAB: Advanced Photocatalytic Reactor for Treatment of Liquid and Volatile Pollutants (PARC), start 09/2026
• SAB: Development of a high-capacity Si-metal powder for the production of pastes for Si anodes in lithium-ion batteries (HCSP), start 07/2026
• SAB: Development of a quantum-electronic dual-channel transistor demonstrator for future energy-saving circuits (QUANTZ), start 12/25
• Innovation Fund Denmark: Erbium-based silicon quantum light sources (EQUAL), start 05/25
• HHIF: Dual-band silicon optical sensor (D-BAND), start 02/25
• BMBF: On-chip realization and integration of electrically driven silicon single photon sources in the optical telecommunication band (ORION), start 01/25
• SAB: Cost-effective CMOS-based GeSn shortwave infrared photodetectors (GeSn-SWIR), start 12/24
• SAB: Silicon fleece anodes as a component of a lithium-ion battery (SiVlies), start 06/24
• DFG: Ultradoped GeSn-based plasmonic antennas and GeSn/Si plasmon-enhanced heterojunction photoemission infrared photodetectors on the Si platform, start 02/24
• SAB: Future Mobility - Optical Characterization of Ion Beams (OptiBeam), start 07/23
• VIP+ Project (BMBF): Integrated high-capacity solid state Li ion battery, start 07/23
• HI-ACTS: Wafer-scale CMOS technology for room-temperature extended short-wave infrared GeSn photodetectors based on ion implantation and flash lamp annealing, 05-12/23
• HI-ACTS: Contact engineering in III-V-Nitrides for UV light emitters, 05-12/23
• EU-Horizon: Innovation Fostering in Accelerator Science and Technology (I.FAST), Start 2023
• DFG: Room-temperature broadband MIR photodetector based on Si:Te for wafer-scale integration, Start 2020
• BMBF "ForMikro": Group IV heterostructures for high performance nanoelectronic devices (SiGeSn NanoFETs), start from 2020
• Helmholtz Innovation Lab blitzlab for ultra-short time annealing, start 02/20
• DFG-DACH: Quantum control of single spin centers in silicon carbide coupled to optical microcavities, start from 2019
• DFG: 3D tailoring of all-oxide heterostructures by ion beams (3D-Domino), start from 2019
• DFG: Doping by means of FLA and ALD, 08/18 - 11/21
• Humboldt Research Fellowship for Postdoctoral Researchers, Y. Berencén, 06/16 – 05/19
• SAB project SiNERGY, 09/17 – 09/19
• DECHEMA