2D materials

The scientific revolution in 2D materials began in 2004 with the isolation of graphene, and has continued with the group of transition metal dichalcogenides (TMDs). To date, hundreds of such materials have been demonstrated and thousands are theoretically predicted. The related activities at the IIM cover a wide spectrum, from the study of charge carrier dynamics, defect formation, doping to the fabrication of (opto-)electronic devices, such as transistors or detectors. Due to additional experimental equipment, stacked multilayers and heterolayers can now also be prepared with a defined twist angle (stacked & twisted) in a controlled manner. In such structures, previously inaccessible degrees of freedom can be used to realize novel electronic states and processes for information processing (valleytronics and twistronics). Many of the established competencies at IIM contribute to research on such materials: Transport measurements, optical and THz spectroscopy, also in the magnetic field or locally resolved in the near field, defect generation and doping by ions, or atomistic multiscale simulations.

Participating departments of the institute

• Nanoelectronics
• Ion Beam Center
• Spectroscopy