Contact

Dr. Shengqiang Zhou

Head Semiconductor Material­s
Head
s.zhouAthzdr.de
Phone: +49 351 260 2484

Dr. Lars Rebohle

l.rebohleAthzdr.de
Phone: +49 351 260 3368

News from FWIM

19.09.2019 | Juanmei Duan won the Graduate Student Awards in the E-MRS 2019 Fall Meeting! Congratulations!

30.05.2019 | Mao Wang won the Graduate Student Awards in the E-MRS 2019 Spring Meeting! Congratulations!

14.05.2019 | Our paper on Breaking the Doping Limit in Silicon by Deep Impurities being published at Phys. Rev. Appl.

09.05.2019 | Our paper on Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium being published at Phys. Rev. Mater.

02.05.2019 | Our paper on Tunable disorder and localization in the rare-earth nickelates being published at Phys. Rev. Mater.

26.04.2019 | Our paper on Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical, and optical properties being published at Phys. Rev. Mater.

Eye catcher

Department of Semiconductor Materials (FWIM)

The department is concerned with the synthesis and modification of advanced materials for opto-electronics and quantum technology by ion beams and by millisecond flash lamp/nanosecond pulsed laser. It is equipped with tools for ultra-fast annealing and thin film deposition as well as with cutting-edge devices for the electrical, optical and magnetic investigation of materials. The research work is performed in close collaboration with other departments at the HZDR including the Ion Beam Center (IBC), ELBE and the High Magnetic Field Lab.

Research topics

Foto: Hyperdoping

Hyper-doping semiconductors

Foto: Antenna

Infrared Optoelectronics

Foto: Defect engineering

Defect engineering by ions

Foto: Defects in SiC

Hybrid quantum technologies with atom-scale defects

Foto: Quantum Metrology

Quantum metrology with topological materials

Foto: FLA and PLA

Flash lamp and pulsed laser annealing


Third party projects:

  • BMBF "ForMikro": Group IV heterostructures for high performance nanoelectronic devices (SiGeSn NanoFETs), start from 2020
  • DFG-DACH: Quantum control of single spin centers in silicon carbide coupled to optical microcavities, start from 2019
  • DFG: 3D tailoring of all-oxide heterostructures by ion beams (3D-Domino), start from 2019
  • DFG: Doping by means of FLA and ALD, start 2018
  • Humboldt Research Fellowship for Postdoctoral Researchers, Y. Berencén, 06/16 – 05/19
  • SAB project SiNERGY, 09/17 – 09/19
  • DECHEMA

Contact

Dr. Shengqiang Zhou

Head Semiconductor Material­s
Head
s.zhouAthzdr.de
Phone: +49 351 260 2484

Dr. Lars Rebohle

l.rebohleAthzdr.de
Phone: +49 351 260 3368