Ion Beam Analysis
Applied ion beam analysis makes use of ion beams for materials, structural and radionuclide analysis. Experimental and theoretical studies of interactions of ions with solids including energy-loss, straggling, and charge-state distributions are part of our research. We further develop and improve technology for high-resolution ion beam analysis in terms of energy resolution as well as in terms of lateral resolution.
We closely collaborate with other divisions within our institute and contribute to the work of many external groups at universities, other research centres, industrial research institutes and companies. Most of our applied research topics are interdisciplinary.
Analysis is free of charge but requires submission of a proposal. More information about how to apply for analysis
Current research topics
- Ion beam analysis with highest lateral resolution / Ion beam analysis within a Helium ion microscope
- In-situ ion beam analysis and ion beam analysis under enviromental conditions
- Combining different techniques of ion beam analysis in unique experiments
Techniques
Rutherford-Backscattering-Spectrometry - RBS
- High detection sensitivity for heavy elements in a light matrix or on a light substrate
- Quantitative und standard-free method with a relative accuracy of 1%
- Employing channeling for damage measurements in single crystals
Typical parameters
- Analysable elements: O to U
- Detection limits:
(depending on element/matrix combination)- < 0.1 atomic-% up to several atomic-% in volume
- 1012 atoms/cm2 up to 1015 atoms/cm2 as thin films
- Analysis depth: ~ 1 micrometre
- Depth resolution: 5-10 nm using standard silicon detectors
- Medium Energy Ion Scattering (MEIS) as special application with a depth resolution of about 1 nm
Elastic recoil detection - ERD
- Good detection sensitivity for light elements in any type of matrix or on any type of substrate, altough best sensitivity for a light matrix/substrate
- Heavy elements in a light matrix by detection of the scattered primary ions
- Quantitative und standard-free method with a relative accuracy of 5%
Typical parameters
-
Analysable elements: H - Ar (recoil atom), K-U(scattered primary ions)
-
Detection limits: 0.1 atomic-% up to >1 atomic-% (in the presence of heavy elements)
- Analysis depth (max.): 0.5 - 0.75 μm
- Depth resolution: ~ 20 nm
Nuclear reaction analysis - NRA
- Selective detection of light elements
- Isotope sensitive
- Particularly suitable for quantitative hydrogen analysis
- Trace element depth distributions
Typical parameters
- Analysable elements: H to F
- Lateral resolution:1 - 100 mm2
- Detection limits:
- < 0.05 atomic-% (H)
- 0.1 atomic-% (D to F)
- Analysing depth: up to 5 µm (matrix-dependent)
- Depth resolution (for H):
- ~ 8 nm (in Si)
- 1 nm (grazing incidence)
Particle induced X-Ray and Gamma- Emission - PIXE/PIGE
- High sensitivity
- Simultaneous multi-element analysis
- Non-destructive
- In vacuum or in air
Typical parameters
- Analysable elements: Li to Al (PIGE), Si to U (PIXE)
- Detection limits:
> 0.001 atomic-% - Analysis depth (max.): 0.5 - 5 µm
Read more for PIXE/PIGE at our micro beam line
Read more for PIXE/PIGE at our external ion beam line (in air)
Ion microbeam analysis
- Lateral element distributions or depth profiles in lateral resolution of some µm's using PIXE, RBS, ERD and/or NRA
- Quantitative und standard-free method with an accuracy of 5-10%
Typical parameters
- Analysable elements: almost all, depending on applied technique (see above)
- Lateral resolution:
> 3 x 3 µm2 - Scanning area: max. 2x2 mm2
- Detection limits:
- 0.2 atom-% (H & Li & B-F & Na-Al)
- > 0.001 atom-% (for Si to U)
- Analysis depth (max.): 1-5 µm (matrix and method dependent )
- Depth resolution: ~ 20 nm (RBS and NRA)
External ion beam for Archaeometry and Art
- Non-destructive analysis under atmpspheric pressure with a ion beam that exits the vacuum through a foil
- Points on big and fragile objects can be directly measured, no sampling
- Simultaneous analysis of many elements using PIXE, PIGE and RBS
- Quantitative und standard-free method with an accuracy of 5-10%
Typical parameters
- Analysable elements: Li, B - U (depending on the applied technique)
- Ion beam: H+, 4 MeV
- Exit foil: 2 µm Havar foil (cobalt alloy)
- He flow between exit foil and object possible
- Lateral resolution: sub-mm
- Analysable area: max.~ meter
- Detection limits:
- 0.2 atom-% ( Li - Mg, excluding Be and Ne)
- > 0.001 atom-% (for Al to U)