Contact
Dr. Ahmad Echresh
Cleanroom Manager
Postdoctoral researcher
Nanofabrication and Analysis
a.echresh
hzdr.de
Phone: +49 351 260 3893
Dr. Ciaran Fowley
Head Nanofabrication and Analysis
c.fowleyhzdr.de
Phone: +49 351 260 3253
Reactive Ion Etching (RIE)
Deep anisotropic silicon etching up to some tens of µm, etching of SiC and surface cleaning of different materials in oxygen can be carried out using fluorine containing gases with the SENTECH reactive ion etching tool.
Facility SI 500 (SENTECH Instruments GmbH)
| Type | Single chamber parallel plate reactor | |
| Specifications | Process chamber | Inner diameter 300 mm, 270 mm high, with Laser-interferometer Etch-stop |
| Electrodes | Upper electrode with gas shower, 250 mm diameter Substrate electrode for up to 200 mm wafers with three lifting pins, cooled or heated in the temperature range -30 < T(°C) < 80 |
|
| RF-supply | ICP source up to 1200 W, RF source up to 800 W, frequency 13.56 MHz | |
| Load lock | Automatic single wafer pneumatic vacuum load lock | |
| Gas flow | 8 channels (SF6, CF4, O2, Ar, C4F8 with MFC controlling) | |
| Operating mode | Automatical mode with SPS controlling coupled to a PC, SENTECH software | |
| Current applications | Isotropic etching of SiC using SF6+O2 or CF4+O2, etch rate 40 nm/min, usual etch depth up to 200 nm | |
| Anisotropic etching of Si using SF6+O2 and thermally grown SiO2 as etch mask, etch rate 1 µm/min, etch depth of trenchs < 20 µm, selectivity RSi/RSiO2 > 130, anisotropy 0.97. | ||
