Contact

Dr. René Heller

r.hellerhzdr.de
Phone: +49 351 260 3617

Dr. Frans Munnik

f.munnikhzdr.de
Phone: +49 351 260 2174

Ion Beam Analysis

Structural Diagnostics

User facilities at the Ion Beam Center

Available ion beam analysis techniques at the Ion Beam Center

In principle all elements of the periodic table can be analysed by ion beam analysis (IBA). Which method to choose for a particular problem, dependents on the actual matter of interest.

Typical application field of ion beam analysis are amongst others:

Semiconductor materials
Solar cells
Glasses
Metals
Special and compound materials
Coatings
Biomedical materials
Arts and cultural heritage
Geological samples
Archaeometry

We are glad to counsult you.

Rutherford-Backscattering-Spectrometry - RBS High detection sensitivity for heavy elements in a light matrix or on a light substrate Blind for light elements in a heavy matrix or on a heavy substrate Quantitative und standard-free method with an accuracy of < 1% Employing channeling for damage measurements in single crystals Typical parameters Analysable elements: O to U Detection limits: (highly depending on element/matrix combination) < 0.1 atom-% up to several atom-% in volume 10¹² atoms/cm² up to 10¹⁵ atoms/cm² as thin films Analysing depth: ~ micrometres Depth resolution: < 5 nm using standard silicon detectors High resolution RBS as special application --> depth resolution < 1 nm

Elastic recoil detection - ERD High detection sensitivity for light elements in a heavy matrix or on a heavy substrate Blind for heavy elements in a light matrix Quantitative und standard-free method with an accuracy of ~1% Typical parameters Analysable elements: H, B-S, Cl-U Detection limits: < 0.1 atom-% up to >1 atom-% (in the presence of heavy elements) Analysing depth (max.): 0.5 - 0.75 μm Depth resolution: ~ 20 nm High resolution ERD as special application --> depth resolution ~ 0.8 nm

Nuclear reaction analysis - NRA Selective detection of light elements Isotope sensitive Trace element distributions Typical parameters Analysable elements: H to F Lateral resolution:1 - 100 mm² Detection limits: < 0.02 atom-% (H) 0.05 atom-% (D to F) Analysing depth: up to 5 µm (matrix-dependent) Depth resolution: ~ 8 nm (in Si) 1 nm (grazing incidence)

Particle induced X-Ray and Gamma- Emission - PIXE/PIGE Non-destructive Simultaneous multi-element In vacuum or in air Typical parameters Analysable elements: Li to U Detection limits: > 0.001 atom-% Analysing depth (max.): 0.5 - 5 µm

Ion microprobe Lateral element distributions or depth profiles in lateral resolution of some µm's using PIXE, RBS, RBS/C, ERD and/or NRA Quantitative und standard-free method with an accuracy of < 5% Typical parameters Analysable elements: depending on applied technique (see above) Lateral resolution: > 1 x 1 µm² > 10 x 10 µm² (channeling) Scanning area: < some mm² Detection limits: 0.2 atom-% (H & B-F) > 0.001 atom-% (for Al to U) Analysing depth (max.): 1 µm (matrix-dependent) Depth resolution: ~ 20 nm	2D elemental distributions measured by µ-PIXE on a seabed sample (3 MeV proton beam, beam spot 4x7 µm², total size 1x1 mm²). Clearly observable are pyrites (FeS₂), partly inside a potassium and silicon shell.