40 kV Ion Implanter

	Supplier:	Danfysik A/S, Denmark, Model 1050
	Ion source:	Chordis, gaseous and solid source feed
	Energy range:	50 eV - 40 keV (for singly charged ions)
	Scanning principle:	Twofold electrostatic
	Implantation chambers:	1

A detailed description of the implantation chamber at the 40 kV ion implanter can be found here.

The implantation chamber at the 40 kV ion implanter

	Substrates:	up to 6" wafers
	Substrate size:	0.3 x 0.3 cm2 to 6" wafers
	Implantation area:	max. 150 x 150 mm
	Implantation angle:	0° and 7°, other angles upon request
	Substrate temperature:	Nitrogen cooling for 2" wafers, up to 800 °C for 1 x 1 cm2 samples
	Fluence range:	1012 to 1017 cm-2 (higher fluences on request)