500 kV Ion Implanter

	Supplier:	High Voltage Engineering Europa B.V., Model B8385
	Ion source:	IHC Bernas, gaseous and solid source feed
	Energy range:	15 - 500 keV (for singly charged ions)
	Scanning principle:	Twofold electrostatic
	Implantation chambers:	2

The implantation chambers at the 500 kV ion implanter

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Chamber 1

	Substrates:	Wafers or smaller samples
	Substrate size:	2" to 6" wafers or smaller samples
	Implantation area:	max. 125 x 125 mm2
	Implantation angle:	7°
	Substrate temperature:	water cooling, no active heating
	Fluence range:	5e10 to 1e17 cm-2 (higher fluences on request)

Chamber 2

	Substrates:	up to Ø 50 mm
	Substrate size:	2" Wafers or smaller samples
	Implantation area:	max. 50 x 50 mm2
	Implantation angle:	7°
	Substrate temperature:	up to 900 °C for 2 x 2 cm2, up to 800 °C for up to 3" samples, LN2-cooling: -150 °C for up to 3" samples
	Fluence range:	5e10 to 1e17 cm-2 (higher fluences on request)