500 kV Ion Implanter
Supplier: | High Voltage Engineering Europa B.V., Model B8385 | |
Ion source: | IHC Bernas, gaseous and solid source feed | |
Energy range: | 10 - 500 keV (for singly charged ions) | |
Scanning principle: | Twofold electrostatic | |
Implantation chambers: | 4 |
The implantation chambers at the 500 kV ion implanter
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Chamber 1
Substrates: | Wafers or smaller samples | |
Substrate size: | 2" to 6" wafers or smaller samples | |
Implantation area: | max. 125x125 mm2 | |
Implantation angle: | 7° | |
Substrate temperature: | no cooling, no active heating | |
Fluence range: | 5e10 to 5e16 cm-2 |
Chamber 2
Substrates: | up to Ø 50 mm | |
Substrate size: | 2" Wafers or smaller samples | |
Implantation area: | max. 50x50 mm2 | |
Implantation angle: | 7° | |
Substrate temperature: | up to 800 °C for 1x1 cm2, up to 600 °C for up to 3" samples, -80 °C for up to 3" samples |
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Fluence range: | 5e10 to 5e16 cm-2 |
Chamber 3 with automated wafer handling
Substrates: | wafers | |
Substrate size: | 4" wafers | |
Implantation area: | Ø 98 mm | |
Implantation angle: | 7° | |
Substrate temperature: | room temperature, water cooling | |
Fluence range: | 5e12 to 5e15 cm-2 |
Chamber 4 - double implantation chamber (cf. 3 MV accelerator)
Substrates: | small samples | |
Substrate size: | max. 20x20 mm2 | |
Implantation area: | max. 14x14 mm2 | |
Implantation angle: | 22.5° | |
Substrate temperature: | up to 500 °C | |
Fluence range: | 5e10 to 5e16 cm-2 |