500 kV Ion Implanter

	Supplier:	High Voltage Engineering Europa B.V., Model B8385
	Ion source:	IHC Bernas, gaseous and solid source feed
	Energy range:	10 - 500 keV (for singly charged ions)
	Scanning principle:	Twofold electrostatic
	Implantation chambers:	4

The implantation chambers at the 500 kV ion implanter

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Chamber 1

	Substrates:	Wafers or smaller samples
	Substrate size:	2" to 6" wafers or smaller samples
	Implantation area:	max. 125x125 mm2
	Implantation angle:	7°
	Substrate temperature:	no cooling, no active heating
	Fluence range:	5e10 to 5e16 cm-2

Chamber 2

	Substrates:	up to Ø 50 mm
	Substrate size:	2" Wafers or smaller samples
	Implantation area:	max. 50x50 mm2
	Implantation angle:	7°
	Substrate temperature:	up to 800 °C for 1x1 cm2, up to 600 °C for up to 3" samples, -80 °C for up to 3" samples
	Fluence range:	5e10 to 5e16 cm-2

Chamber 3 with automated wafer handling

	Substrates:	wafers
	Substrate size:	4" wafers
	Implantation area:	Ø 98 mm
	Implantation angle:	7°
	Substrate temperature:	room temperature, water cooling
	Fluence range:	5e12 to 5e15 cm-2

Chamber 4 - double implantation chamber (cf. 3 MV accelerator)

	Substrates:	small samples
	Substrate size:	max. 20x20 mm2
	Implantation area:	max. 14x14 mm2
	Implantation angle:	22.5°
	Substrate temperature:	up to 500 °C
	Fluence range:	5e10 to 5e16 cm-2