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2 PublicationsNanoindentation-induced pile-up in hydrogenated amorphous silicon
Pantchev, B.; Danesh, P.; Wiezorek, J.; Schmidt, B.
Abstract
Nanoindentation-induced material extrusion around the nanoindent (pile-up) leads to an overestimation of elastic modulus, E, and nanohardness, H, when the test results are evaluated using the Oliver and Pharr method. Factors affecting the pile-up during testing are residual stresses in film and ratio of film and substrate mechanical properties. Nanoindentation of hydrogenated amorphous silicon (a-Si:H) films has been carried out with the aim to study the effect of residual compressive stress on the pile-up in this material. To distinguish the contribution of compressive stress to the appearance of pile-up ion implantation has been used as a tool, which reduces the compressive stress in a-Si:H. Scanning probe microscope has been used for the imaging of the indent and evaluation of the pile-up. The values of E and H have been obtained from the experimental load-displacement curves using depth profiling with Berkovich tip, which has created negligible pile-up. A sharper cube corner tip has been used to study the pile-up. It has been established that pile-up is determined by the material plasticity, when the compressive stress is below 200 MPa. The contribution of mechanical stress to the pile-up is essential for the stress as high, as about 500 MPa.
Keywords: Nanoindentation; silicon hardness; ion implantation
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 14867) publication
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Lecture (Conference)
16 th International School on Condensed Matter Physics “Progress in Solid State and Molecular Electronics, Ionics and Photonics”, 29.08.-03.09.2010, Varna, Bulgaria -
Journal of Physics: Conference Series 253(2010), 012054
DOI: 10.1088/1742-6596/253/1/012054
Cited 4 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-14867