Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
1 PublicationElectronic Griffiths Phase in the Te-Doped Semiconductor FeSb2
Hu, R.; Wang, K.; Ryu, H.; Lei, H.; Choi, E. S.; Uhlarz, M.; Wosnitza, J.; Petrovic, C.
Abstract
We report on the emergence of an electronic Griffiths phase in the doped semiconductor FeSb2, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition. Magnetic, transport, and thermodynamic measurements of Fe(Sb1-xTex)2 single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The electronic Griffiths phase states are found on the metallic boundary between the insulating state (x = 0) and a long-range albeit weak magnetic order (x ≥ 0.075).
Involved research facilities
- High Magnetic Field Laboratory (HLD)
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Physical Review Letters 109(2012), 256401
DOI: 10.1103/PhysRevLett.109.256401
Cited 10 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-18175
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