Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation

Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Total number to be selected: 1 Record

1 Publication

Abramof, E.; Beloto, A. F.; Ueda, M.; Günzel, R.; Reuther, H.

Abstract

Nitrogen was implanted in (001) silicon wafers using 12 kV pulses in a glow-discharge PIII system and at 35 keV in an ECR PIII facility.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (2001) 229-234

Permalink: https://www.hzdr.de/publications/Publ-3998

Years: 2023 2022 2021 2020 2019 2018 2017 2016 2015