TIBUSSII (Orsay NanoSpace)

Triple Ion Beam UHV System for Single Ion Implantation

• 2E-10 mbar UHV chamber
• Scanning Electron Microscope SEM, kinetic energy: 1 - 30 keV
• Lateral resolution: 5 nm
  
  
• Mass-separated LMAIS FIB, kinetic energy: 1 - 30 keV / 60 keV
• Lateral resolution: 7 nm
• Available ions: Au, Si, Ge, Ga, … & Cluster-Ionen
  
  
• Mass-separated Plasma FIB, kinetic energy: 1 - 30 keV
• Lateral resolution: 17 nm (not separated), 100 nm (mass-separated)
• Available ions: Ne, Ar, Kr, Xe, N, C, O, CO, H, … & Cluster-ions

Contact person: Nico Klingner

Orsay CANION Z31Mplus

• Mass-separated LMAIS FIB
• Kinetic energy: 10 - 30 keV / 60 keV
• Lateral resolution: 100 nm
• Available ions: Au, Si, Ge, Ga, Co, Nd, Cr, Er, Ni, Bi, … & Cluster-ions

Contact person: Nico Klingner

Zeiss Orion NanoFab

Helium-Ionen-Microscope

• Kinetic energy: 5 - 30 keV
• Lateral resolution: 0.5 nm (He), 1.8 nm (Ne)
• Available ions: He, Ne
• Imaging with secondary electrons
• TOF-SIMS
• Non-conducting samples by charge compensation

Contact person: Gregor Hlawacek

Zeiss Orion Plus

Helium-Ionen-Microscope

• Kinetic energy: 5 - 35 keV
• Lateral resolution: 0.5 nm
• Available ion: He
  
  
• Backscattering detector
• Scanning-Transmission-Ion-Microscopy with position-sensitive MCP detector
• Non-conducting samples by charge compensation

Contact person: Gregor Hlawacek

Zeiss NVision 40

• Scanning Electron Microscope SEM
• Kinetic energy: 1 - 30 keV
• Lateral resolution: 1.5 nm
  
  
• Focussed Ga-beam
• Kinetic energy: 5 - 30 keV
• Lateral resolution: 7 nm
• Available ion: Ga
  
  
• Traveling size of stage: 100 mm
• C- and Pt deposition

Contact person: Nico Klingner

HCI

UHV setup for highly charged ions:

• Kinetic energy: 0.5q bis 4.5q keV
• Available ions: Ne, Ar, Kr

Contact person: René Heller

LEI

HV-setup for low energy ion irradiation:

• Kaufman ion source
• Kinetic energy: 200 bis 1200 eV
• Available ions: Ar, Xe
• Polar angle of incidences: 0° bis 90°
• Sample heating up to 600°C
• Ion induced nanostructuring of surfaces

Contact person: Denise Erb

Olympus Ultra Objective

Atomic force microscope on optical microscope:

• Contact- or Tapping-mode AFM
• Spreading resistance measurements
• max. scanning area: 20 µm x 20 µm
• Aligned with optical microscope

Contact persons: Gregor Hlawacek, Nico Klingner

Bruker Multimode 8 AFM

Atomic force microscope:

• Contact- or Tapping-mode AFM
• 3D-imaging of surface topography with 10 nm lateral resolution
• max. scanning area: 15 µm x 15 µm
• Aligned with optical microscope

Contact person: Denise Erb

Omicron UHV AFM / STM

UHV Atomic force microscope / scanning tunneling microscope:

• Contact- or Non-Contact-mode AFM
• STM
• 3D-imaging of surface topography with <1 nm lateral resolution
• max. scanning area: 5 µm x 5 µm
• Sample heating up to 600°C

Contact person: Stefan Facsko

NanoSAM

Scanning electron microscope in UHV:

• SEM
• Lateral resolution: 5 nm

Contact person: Denise Erb

Spot Welder

Spot welder:

• Spot welding of wires and sheet metal

Contact person: Nico Klingner

Etching Setup

• Electrochemical etching of tungsten tips

Contact person: Nico Klingner

Leica EM TXP

Mechanical sample preparation:

• Milling, sawing, grinding and polishing
• Preparation for light microscopy, electron and ion microscopy

Contact person: Nico Klingner

ArBlade 5000 CTC

HV-setup for ion milling:

• Kinetic energy: 0.1 bis 8 keV
• Available ions: Ar
• Ion sputtering for smoothing, trenching or cutting
• Erosion rate up to 1 mm/h

Contact person: Nico Klingner

LMAIS preparation

HV-setup for LMAIS (Liquid Metal Alloy Ion Sources) production:

• Cleaning and melting of alloys for LMAIS
• Wetting, filling and functional test

Contact person: Nico Klingner