Contact

PD Dr. habil. Artur Erbe
Head transport in nanostructures / device processing / NanoNet
Scaling Phenomena
a.erbeAthzdr.de
Phone: +49 351 260 2366

Dr. Yordan Georgiev
Head of Nanofabrication
Transport Phenomena in Nanostructures
y.georgiev@hzdr.de
Phone: +49 351 260 2321

Equipment: Transport phenomena in nanostructures

Planned experimental setups

Machine Details
RAITH 150
Electron beam writer
RAITH 150 TWO
  • Manufacturer: RAITH GmbH
  • Applications:
    • Nanolithography
    • Imaging
  • Electron source:
    • 30 kV Schottky thermal field electron emitter ZrO/W
  • Sample size: ≤ 4 inch wafer
  • Smallest feature size: sub 8 nm
  • Sample stage with laser interferrometer
    • Resolution: 1nm
  • Height sensing and FBMS mode available
  • GDSII editor for generation of complex structure design on several layers with individual dose factor assignment for single structrure elements
  • NanoPECSTM software suite for the correction of proximitty effects

Responsible: Dr. Y. Georgiev, Y.Georgiev@hzdr.de, 0351 / 260 - 2321

RAITH eLiNE
Electron beam writer
RAITH 150 eLiNE plus
  • Manufacturer: RAITH GmbH
  • Applications:
    • Nanolithography
    • Imaging
    • Nanoengineering
  • Electron source:
    • 30 kV Schottky thermal field electron emitter ZrO/W
  • Sample size: ≤ 3 inch wafer
  • Smallest feature size: sub 5 nm
  • Sample stage with laser interferrometer
    • Resolution: 1nm
  • 4 integrated nanomanipulators for e.g. nanoprobing
  • Height sensing mode available
  • GDSII editor for generation of complex structure design on several layers with individual dose factor assignment for single structrure elements
  • NanoPECSTM software suite for the correction of proximitty effects

Responsible: Dr. Y. Georgiev, Y.Georgiev@hzdr.de, 0351 / 260 - 2321

RIBE IonSys 500
Reactive ion beam etcher
IonSys 500
  • Manufacturer: ROTH & RAU AG
  • Applications:
    • Non-selective etching by sputtering with Ar gas
    • Anisotropic etching of:
      • Metals
      • Magnetic stacks
      • SiO2
  • Sample size: ≤ 6 inch wafer
  • Ar source
  • Etch gas: CF4
  • Helium backside cooling
  • Sample tilting: ≤ 90°
  • Sample rotation: ≤ 10 rpm
  • Secondary Ion Mass Spectrometer (SIMS) manufactured by Hiden Analytical, UK for end point detection

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366>

BETty
UHV evaporation tool
BETty
  • Manufacturer: BESTEC GmbH
  • Base pressure <10-9 mbar
  • E-gun evaporator (7 pockets)
  • Thermal evaporator (Al)
  • Temperature range 130 K – 600 K
  • Tilt range ±45°
  • Sputter gun (sample cleaning)
  • Application: Metal film deposition

Responsible: Dr. Y. Georgiev, Y.Georgiev@hzdr.de, 0351 / 260 - 2321

Cryogenic probe station CPX-VF
Cryogenic probe station
CPX-VF
 
  • Manufacturer: LAKESHORE
  • Applications:
    • C-V measurements
    • I-V measurements
    • 4-Probe measurements
    • Hall measurements
    • Microwave measurements
    • Electro-optical measurements
    • all measurements can be combined with out-of-plane vertical field superconducting magnetic measurements
  • Sample size: ≤ 2 inch wafer
  • Magnetic field: ∓ 2,5 T
  • Orientation of the magnetic field: vertical out-of-plane
  • Temperature range: 4.5 K – 400 K
  • Available sample holder:
    • grounded sample holder
    • coaxial sample holder
    • tiltable sample holder
      • Orientation of the magnetic field can be changed to in-plane
  • Measuring instruments:
    • AGILENT 4156C Precision Semiconductor Parameter Analyzer
    • LakeShore 625 Superconductiong magnet power supply
    • LakeShore 340 Temperature controller
    • LakeShore 332 Temperature controller
  • Incoupling of a laser signal (λ = 473nm / 785nm) possible
  • Multiple radiation shields for best low temperature performance
  • Minimize sample condensation during cool-down
  • True 90° probing

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366>

Cryogenic probe station TTP-4A
Cryogenic probe station
TTP-4A
  • Manufacturer: LAKESHORE
  • Applications:
    • C-V measurements
    • I-V measurements
    • Microwave measurements
    • Electro-optical measurements
  • Sample size: ≤p to 2 inch wafer
  • Temperature range: 4.5 K – 400 K
  • Available sample holder:
    • grounded sample holder
    • coaxial sample holder
  • Measuring instruments:
    • AGILENT 4156C Precision Semiconductor Parameter Analyzer
    • AGILENT 34410A Digital Multimeter
    • KEITHLEY 2400 Source Meter
    • LakeShore 332 Temperature controller
  • Incoupling of a laser signal (λ = 473nm / 785nm) possible
  • Radiation shield for best low temperature performance
  • Minimize sample condensation during cool-down
  • True 90° probing

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366>

MCBJ
Mechanical controlled
break junction setup
  • Applications:
    • Electrical characterization of molecular structures
      • at room temperature
      • in liquid environment
  • Currently investigated molecules:
    • Selenium metal complexes
    • Polythiophenes
    • Bucky-bowl structures (e.g. Corannulene)
  • Currently investigated solvents:
    • Mesitylen
    • Toluol
  • Current measurement in the range of Femto-Ampere due to electrical and magnetic shielding technology
  • 4 setups

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

Cryogenic UHV break junction setup
Cryogenic UHV
break junction setup
  • Applications:
    • I-V measurements
    • Ploting histograms of the conductance
    • Inelastic electron tunneling spectroscopy (IETS)
    • Point-contact spectroscopy (PCS)
  • Temperature range: 5 K – 300 K
    • Accuracy: 0,1 K
  • Pressure (at low temperatures): 5*10-5 mbar
  • In situ deposition of molecules into the break junctions
    • Via thermal evaporation of e.g. C60
      • Depostion rate: 0,2 Å/s - 0,6 Å/s
      • Thicknesses of ¼ up to 1 monolayer
  • Measuring instruments:
    • KEITHLEY 2400 Source Meter
    • KEITHLEY 6430 Sub Femtoamp Remote Source Meter
    • LakeShore 331 Temperature controller
    • YOKOGAWA 7651 Programmable DC Source

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

Laser cutter
Laser cutter
skylaser MARK 20
  • Manufacturer: PFEIFER technology & innovation
  • Sample size:
Plasma cleaner
Plasma cleaner
PICO
  • Manufacturer: DIENER ELECTRONIC GmbH + Co. KG
  • Applications:
    • Activating of semiconductors
    • Cleaning of semiconductors
    • Etching of semiconductors
    • Plasmapolymerisation
  • Sample size: ≤ 4 inch wafer
  • Gases: O2, Ar
  • Frequency: 2,45 GHz
  • Power: 0 - 300W
  • Faraday box for electrical sensitive components
  • Piranisensor is measuring the pressure below 10 mbar
  • Power display of the generator
  • Timer for setting the process time up to 999,9 min
High vacuum oven
High vacuum oven
XERION X-TUBE
  • Manufacturer: XERION ADVANCED HEATING® Ofentechnik GmbH
  • Sample size: ≤ 4 inch wafer
  • Temperature range:up to 800°C
  • Pressure: down to 4*10-7 mbar
  • Gas: N2
  • Ramp rates for heating up and cooling down
Optical microscope
Optical microscope
OPLYMPUS BX51
  • Manufacturer: OLYMPUS GmbH
  • Magnifications: 5x, 10x, 20x, 50x, 100x, 250x
  • Dark field and bright field mode
  • Transmitted light and reflected light mode
  • Taking images with the installed camera (Carl Zeiss Axio Cam MRc)

Optical tweezers

  • tool for ...
    • ...
  • Application: ...

Responsible: ...

Planned experimental setups
Cluster deposition setup
Cluster deposition setup
  • Applications:
    • Generation of metal- or MnSm (M = Mo, W) clusters
    • Electrical characterization of mass-selected clusters using mechanically controllable break junctions (MCBJs)
    • Investigation of electron transport properties and Chevrel phases of MnSm clusters
  • Insitu cluster generation by pulsed arc cluster ion source (PACIS)
  • Mass separation by time-of-flight mass spectrometer with reflectron
  • Generation of metal clusters due to gas supply and annealing steps
  • Insitu deposition of the clusters into a MCBJ via soft landing method
  • Pressure: ≥ 10-7 mbar

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

ASOPS

  • Application
    • Optical characterization of nanomechanical resonators

Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

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Contact

PD Dr. habil. Artur Erbe
Head transport in nanostructures / device processing / NanoNet
Scaling Phenomena
a.erbeAthzdr.de
Phone: +49 351 260 2366

Dr. Yordan Georgiev
Head of Nanofabrication
Transport Phenomena in Nanostructures
y.georgiev@hzdr.de
Phone: +49 351 260 2321