Ion Induced Nanostructures
We study processes during the interaction of low energy (10 eV – 60 keV) ions with different charge states with materials, especially for the controlled modification and nano-patterning of their surfaces. Such modifications can be material removal through sputtering of surface atoms but also near surface ion beam mixing, ion beam induced defect engineering, or implantation of guest atoms (see figure below). Bottom up as well as top down surface structuring can be achieved through the use of either broad beam irradiation or focused ion beam irradiation.
The first one allows to roughen, smoothen, or clean technical surfaces. Furthermore, the energy deposited by the continuous ion impact drives the surface out of equilibrium inducing many processes on the surface and the sub-surface region.
Alternatively, focused ion beams allow the top down structuring of surfaces or surface near regions with a high spatial resolution compatible with modern nanostructure fabrication requirements. In our group we employ a wide range of focused ion beams from very light nobel gas ions to small heavy ion clusters to understand the behaviour of materials and create state-of-the-art nanostructures.
Main research topics:
Pattern formation by self-organization
Focused Ion Beams
Helium Ion Microscopy
Setups - FWIZ-N
Group information:
Group Members - Ion Induced Nanostructures
Recent publications
Older publications can be found in the database (longer loading time)
2024
Contribution of black carbon and desert dust to aerosol absorption in the atmosphere of the Eastern Arabian Peninsula
M. M. K. Mahfouz, G. Skok, J. Sciare, M. Pikridas, M. Rami Alfarra, S. Moosakutty, B. Alfoldy, M. Ivančič, M. Rigler, A. Gregorič, R. Podlipec, S. Lohmann, G. Hlawacek, R. Heller, E. Tutsak, G. Močnik
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 38810) publication
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Ultralong-term high-density data storage with atomic defects in SiC
M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. Astakhov
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 38750) publication
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Data publication: Ultralong-term high-density data storage with atomic defects …
ROBIS: 38751 HZDR-primary research data are used by this (Id 38750) publication
Defects distribution and evolution in selected-area helium ion implanted 4H-SiC
Y. Song, Z. Xu, M. Rommel, G. Astakhov, G. Hlawacek, F. Fang
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37512) publication
An intermediate morphology in the patterning of the crystalline Ge(001) surface induced by ion irradiation
D. Erb, D. A. Pearson, T. Skeren, M. Engler, R. M. Bradley, S. Facsko
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36885) publication
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Data publication: Morphological transitions in the patterning of the …
ROBIS: 36887 HZDR-primary research data are used by this (Id 36885) publication
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2023
Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions
R. Ratajczak, E. Guziewicz, S. Prucnal, C. Mieszczynski, P. Jozwik, M. Barlak, S. Romaniuk, S. Gieraltowska, W. Wozniak, R. Heller, U. Kentsch, S. Facsko
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 38248) publication
Ab initio insights on the ultrafast strong-field dynamics of anatase TiO2
S. L. Suma Balakrishnan, M. Lokamani, K. Ramakrishna, A. Cangi, D. Murali, M. Posselt, S. Assa Aravindh
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Data publication: Ab initio insights on the ultrafast strong-field dynamics of …
ROBIS: 38018 HZDR-primary research data are used by this (Id 37571) publication
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Contribution to WWW
https://doi.org/10.48550/arXiv.2306.17554 - Physical Review B 108(2023), 195149
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- Open Access Version from doi.org
- Secondary publication expected from 27.11.2024
Challenges of Electron Correlation Microscopy on Amorphous Silicon and Amorphous Germanium
D. Radic, M. Peterlechner, K. Spangenberg, M. Posselt, H. Bracht
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37521) publication
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- Secondary publication expected from 26.08.2024
Roadmap for focused ion beam technologies
K. Höflich, G. Hobler, F. I. Allen, T. Wirtz, G. Rius, A. Krasheninnikov, M. Schmidt, I. Utke, N. Klingner, M. Osenberg, L. McElwee-White, R. Córdoba, F. Djurabekova, I. Manke, P. Moll, M. Manoccio, J. M. de Teresa, L. Bischoff, J. Michler, O. de Castro, A. Delobbe, P. Dunne, O. V. Dobrovolskiy, N. Freese, A. Gölzhäuser, P. Mazarov, D. Koelle, W. Möller, F. Pérez-Murano, P. Philipp, F. Vollnhals, G. Hlawacek
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37049) publication
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Applied Physics Reviews 10(2023)4, 041311
arXiv: 2305.19631
Cited 4 times in Scopus -
Poster
Eu-F-N workshop, 07.-09.06.2023, Zürich, Schweiz -
Poster
FIT4NANO workshop, 17.-19.07.2023, Lisbon, Portugal -
Poster
AVS69, 05.-10.11.2023, Portland, USA
Universal radiation tolerant semiconductor
A. Azarov, J. G. Fernández, J. Zhao, F. Djurabekova, H. He, R. He, Ø. Prytz, L. Vines, U. Bektas, P. Chekhonin, N. Klingner, G. Hlawacek, A. Kuznetsov
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36900) publication
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Data publication: Universal radiation tolerant semiconductor
ROBIS: 37095 HZDR-primary research data are used by this (Id 36900) publication
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Nature Communications 14(2023), 4855
arXiv: 2303.13114
Cited 13 times in Scopus
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Direct magnetic manipulation of a permalloy nanostructure by a focused cobalt ion beam
J. Pablo-Navarro, N. Klingner, G. Hlawacek, A. Kakay, L. Bischoff, R. Narkovic, P. Mazarov, R. Hübner, F. Meyer, W. Pilz, J. Lindner, K. Lenz
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36822) publication
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- Secondary publication expected from 26.10.2024
Fluctuation Electron Microscopy on Amorphous Silicon and Amorphous Germanium
D. Radić, M. Peterlechner, M. Posselt, H. Bracht
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36691) publication
Transport properties of Fe60Al40 during the B2 to A2 structural phase transition
S. Sorokin, M. S. Anwar, G. Hlawacek, R. Boucher, J. Salgado Cabaco, K. Potzger, J. Lindner, J. Faßbender, R. Bali
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36384) publication
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Data to the paper "Transport properties of Fe60Al40 during the B2 to A2 …
ROBIS: 36375 HZDR-primary research data are used by this (Id 36384) publication -
Data to the paper "Transport properties of Fe60Al40 during the B2 to A2 …
RODARE: 2102 HZDR-primary research data are used by this (Id 36384) publication
Bottom-up Fabrication of FeSb₂ Nanowires on Crystalline GaAs Substrates with Ion-induced Pre-patterning
T. Weinert, D. Erb, R. Hübner, S. Facsko
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36264) publication
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Data publication: Bottom-up Fabrication of FeSb₂ Nanowires on Crystalline GaAs …
ROBIS: 36517 HZDR-primary research data are used by this (Id 36264) publication
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The Impact of Energy Filtering on Fluctuation Electron Microscopy
D. Radic, M. Peterlechner, M. Posselt, H. Bracht
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36147) publication
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- Open Access Version from academic.oup.com
- Secondary publication expected
Deterministic multi-level spin orbit torque switching using focused He+ ion beam irradiation
J. Kurian, A. Joseph, S. Cherifi-Hertel, C. Fowley, G. Hlawacek, P. Dunne, M. Romeo, G. Atcheson, J. M. D. Coey, B. Doudin
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 35950) publication
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Pattering data from NPVE software for Helium Ion Microscopy (HIM) irradiation …
ROBIS: 36030 HZDR-primary research data are used by this (Id 35950) publication -
Pattering data from NPVE software for Helium Ion Microscopy (HIM) irradiation …
RODARE: 2055 HZDR-primary research data are used by this (Id 35950) publication
Tailoring crosstalk between localized 1D spin-wave nanochannels using focused ion beams
V. Iurchuk, J. Pablo-Navarro, T. Hula, R. Narkovic, G. Hlawacek, L. Körber, A. Kakay, H. Schultheiß, J. Faßbender, K. Lenz, J. Lindner
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 35208) publication
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Data publication : Tailoring crosstalk between localized 1D spin-wave …
ROBIS: 36217 HZDR-primary research data are used by this (Id 35208) publication -
Data publication : Tailoring crosstalk between localized 1D spin-wave …
RODARE: 2070 HZDR-primary research data are used by this (Id 35208) publication
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Contribution to WWW
https://arxiv.org/abs/2209.13180 -
Scientific Reports 13(2023)1, 764
Cited 2 times in Scopus
CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications
J. Borany, H.-J. Engelmann, K.-H. Heinig, E. Amat, G. Hlawacek, F. Klüpfel, R. Hübner, W. Möller, M.-L. Pourteau, G. Rademaker, M. Rommel, L. Baier, P. Pichler, F. Perez-Murano, R. Tiron
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 34842) publication
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Data publication: CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si …
ROBIS: 34906 HZDR-primary research data are used by this (Id 34842) publication