High-Energy Ion Implantation
High-energy ion implantation has been well-established in production technology of a number of semiconductor devices. Known advantages of targeted doping, defect creation, or a combination of both are utilized with high-energy ion implantation.
High ion energies of typically some megaelectron-volts (MeV) induce high ion penetration depths in material, thus, facilitating buried doping or defect profiles, unlike any other technology.
Low fluences of 1010 to 1013 cm-2 in typical application fields make the high-energy ion implantation also financially attractive.
Typical application fields of high-energy ion implantation include:
- Implantation of light ions (H, He) to improve the switching behavior in power electronic semiconductor devices (power diodes, thyristors, or power MOSFETs)
- Implantation of doping elements (H, B, P, As, ...) to tune field strength distributions in photodiodes, particle detectors or high-voltage devices
- Implantation of heavy ions to improve emission characteristics of laser diodes
Following implantation chambers and wafer handling systems are offered to perform high-energy ion implantation at our 6 MV Tandetron and 3 MV Tandetron high-energy ion accelerators:
6 MV Tandetron
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High Voltage Engineering Europa B.V. |
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Plasma ion sources for He-, H-, 15NH-
Cs sputter source for all ions (H to Au) except He
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0.3 - 6 MV |
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0.6 - 60 MeV (depending on charge state, not at all endstations) |
(I) Channel 3: Single wafer implantation chamber
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x, y electrostatic (fx ≈ 1 kHz, fy ≈ 1 kHz) |
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wafers or other planar samples |
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up to 125 mm wafers |
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0° or 7° (other on request) |
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no cooling, typically room temperature |
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starting from 1x1010 cm-2 |
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class 6 (DIN EN ISO 14644) |
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typically 20 per h (depending on fluence) |
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(II) Channel 12: Automated wafer handler
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x, y electrostatic (32 Hz x 2 kHz)
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wafers only |
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up to 200 mm wafers |
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0° or 7° (other on request) |
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no cooling, typically room temperatur |
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starting from 1x1010 cm-2 |
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class 5 (DIN EN ISO 14644) |
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up to 50 per h (depending on fluence) |
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3 MV Tandetron
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High Voltage Engineering Europa B.V. |
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Plasma ion source for He-
Cs sputter source for all ions (H to Au) except He
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0.1 - 3 MV |
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0.2 - 16 MeV (depending on charge state) |
(I) Channel 2: Single wafer, large implantation chamber
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x, y electrostatic (f ≈ 1 kHz) |
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wafers or other planar samples |
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up to 125 mm wafers |
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7° |
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no cooling, typically room temperature |
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starting from 5x1010 cm-2 |
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class 5 (DIN EN ISO 14644) |
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typically 20 per h (depending on fluence) |
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(II) Channel 2: Single wafer, small implantation chamber
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x, y electrostatic (f ≈ 1 kHz) |
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wafers or other planar samples |
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up to 100 mm wafers |
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7° or 0° |
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from LN2 up to 500 °C (for <50mm samples) or 800°C (for 10mm x 10mm) |
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starting from 5x1010 cm-2 |
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not controlled |
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typically 10 per h (depending on fluence) |
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(III) Channel 5: Semi-automated wafer handler EATON NV-10
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x, y (mechanic) |
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wafers only |
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100 mm, 125 mm and 150 mm wafers |
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7° |
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no cooling, typically room temperature |
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starting from 1x1012 cm-2 |
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class 5 (DIN EN ISO 14644) |
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up to 100 per h |
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