Contact

Prof. Dr. Artur Erbe

Head Nanoelectronics
a.erbehzdr.de
Phone: +49 351 260 2366

Dr. Yordan Georgiev

Head Nanofabrication and Analysis
Head of Nanofabrication
y.georgiev@hzdr.de
Phone: +49 351 260 2321

Dr. Matthias Krause

Head Nanomaterials and Transport
matthias.krausehzdr.de
Phone: +49 351 260 3578

List of Chemicals Clean Room

List of Chemicals EBL

Equipment: Transport phenomena in nanostructures

Electron beam writer RAITH 150 ^TWO
Electron beam writer eLiNE ^plus
Reactive ion beam etcher IonSys 500 (RIBE)
UHV evaporation tool BETty
Cryogenic probe station CPX-VF
Cryogenic probe station TTP-4A
Mechanically controllable break junctions (MCBJ)
Cryogenic UHV break junction setup
Laser cutter
Plasma cleaner
High vacuum oven
Optical microscope
Optical tweezers

Planned experimental setups

Cluster deposition and characterization setup
Asynchronous Optical Sampling (ASOPS)

Machine	Details
Electron beam writer RAITH 150 ^TWO	Manufacturer: RAITH GmbH Applications: Nanolithography Imaging Electron source: 30 kV Schottky thermal field electron emitter ZrO/W Sample size: ≤ 4 inch wafer Smallest feature size: sub 8 nm Sample stage with laser interferrometer Resolution: 1nm Height sensing and FBMS mode available GDSII editor for generation of complex structure design on several layers with individual dose factor assignment for single structrure elements NanoPECS^TM software suite for the correction of proximitty effects Responsible: Dr. Y. Georgiev, Y.Georgiev@hzdr.de, 0351 / 260 - 2321
Electron beam writer RAITH eLiNE ^plus	Manufacturer: RAITH GmbH Applications: Nanolithography Imaging Nanoengineering Electron source: 30 kV Schottky thermal field electron emitter ZrO/W Sample size: ≤ 3 inch wafer Smallest feature size: sub 5 nm Sample stage with laser interferrometer Resolution: 1nm 4 integrated nanomanipulators for e.g. nanoprobing Height sensing mode available GDSII editor for generation of complex structure design on several layers with individual dose factor assignment for single structrure elements NanoPECS^TM software suite for the correction of proximitty effects Responsible: Dr. Y. Georgiev, Y.Georgiev@hzdr.de, 0351 / 260 - 2321
Reactive ion beam etcher IonSys 500	Manufacturer: ROTH & RAU AG Applications: Non-selective etching by sputtering with Ar gas Anisotropic etching of: Metals Magnetic stacks SiO₂ Sample size: ≤ 6 inch wafer Ar source Etch gas: CF₄ Helium backside cooling Sample tilting: ≤ 90° Sample rotation: ≤ 10 rpm Secondary Ion Mass Spectrometer (SIMS) manufactured by Hiden Analytical, UK for end point detection Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366>
UHV evaporation tool BETty	Manufacturer: BESTEC GmbH Base pressure <10^-9 mbar E-gun evaporator (7 pockets) Thermal evaporator (Al) Temperature range 130 K – 600 K Tilt range ±45° Sputter gun (sample cleaning) Application: Metal film deposition Responsible: Dr. Y. Georgiev, Y.Georgiev@hzdr.de, 0351 / 260 - 2321
Cryogenic probe station CPX-VF	Manufacturer: LAKESHORE Applications: C-V measurements I-V measurements 4-Probe measurements Hall measurements Microwave measurements Electro-optical measurements all measurements can be combined with out-of-plane vertical field superconducting magnetic measurements Sample size: ≤ 2 inch wafer Magnetic field: ∓ 2,5 T Orientation of the magnetic field: vertical out-of-plane Temperature range: 4.5 K – 400 K Available sample holder: grounded sample holder coaxial sample holder tiltable sample holder Orientation of the magnetic field can be changed to in-plane Measuring instruments: AGILENT 4156C Precision Semiconductor Parameter Analyzer LakeShore 625 Superconductiong magnet power supply LakeShore 340 Temperature controller LakeShore 332 Temperature controller Incoupling of a laser signal (λ = 473nm / 785nm) possible Multiple radiation shields for best low temperature performance Minimize sample condensation during cool-down True 90° probing Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366>
Cryogenic probe station TTP-4A	Manufacturer: LAKESHORE Applications: C-V measurements I-V measurements Microwave measurements Electro-optical measurements Sample size: ≤p to 2 inch wafer Temperature range: 4.5 K – 400 K Available sample holder: grounded sample holder coaxial sample holder Measuring instruments: AGILENT 4156C Precision Semiconductor Parameter Analyzer AGILENT 34410A Digital Multimeter KEITHLEY 2400 Source Meter LakeShore 332 Temperature controller Incoupling of a laser signal (λ = 473nm / 785nm) possible Radiation shield for best low temperature performance Minimize sample condensation during cool-down True 90° probing Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366>
Mechanical controlled break junction setup	Applications: Electrical characterization of molecular structures at room temperature in liquid environment Currently investigated molecules: Selenium metal complexes Polythiophenes Bucky-bowl structures (e.g. Corannulene) Currently investigated solvents: Mesitylen Toluol Current measurement in the range of Femto-Ampere due to electrical and magnetic shielding technology 4 setups Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366
Cryogenic UHV break junction setup	Applications: I-V measurements Ploting histograms of the conductance Inelastic electron tunneling spectroscopy (IETS) Point-contact spectroscopy (PCS) Temperature range: 5 K – 300 K Accuracy: 0,1 K Pressure (at low temperatures): 510^-5 mbar In situ deposition of molecules into the break junctions Via thermal evaporation of e.g. C₆₀ Depostion rate: 0,2 Å/s - 0,6 Å/s Thicknesses of ¼ up to 1 monolayer Measuring instruments: KEITHLEY 2400 Source Meter* KEITHLEY 6430 Sub Femtoamp Remote Source Meter LakeShore 331 Temperature controller YOKOGAWA 7651 Programmable DC Source Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366
Laser cutter skylaser MARK 20	Manufacturer: PFEIFER technology & innovation Sample size:
Plasma cleaner PICO	Manufacturer: DIENER ELECTRONIC GmbH + Co. KG Applications: Activating of semiconductors Cleaning of semiconductors Etching of semiconductors Plasmapolymerisation Sample size: ≤ 4 inch wafer Gases: O₂, Ar Frequency: 2,45 GHz Power: 0 - 300W Faraday box for electrical sensitive components Piranisensor is measuring the pressure below 10 mbar Power display of the generator Timer for setting the process time up to 999,9 min
High vacuum oven XERION X-TUBE	Manufacturer: XERION ADVANCED HEATING® Ofentechnik GmbH Sample size: ≤ 4 inch wafer Temperature range:up to 800°C Pressure: down to 4*10^-7 mbar Gas: N₂ Ramp rates for heating up and cooling down
Optical microscope OPLYMPUS BX51	Manufacturer: OLYMPUS GmbH Magnifications: 5x, 10x, 20x, 50x, 100x, 250x Dark field and bright field mode Transmitted light and reflected light mode Taking images with the installed camera (Carl Zeiss Axio Cam MRc)
	tool for ... ... Application: ... Responsible: ...
Planned experimental setups
Cluster deposition setup	Applications: Generation of metal- or M_nS_m (M = Mo, W) clusters Electrical characterization of mass-selected clusters using mechanically controllable break junctions (MCBJs) Investigation of electron transport properties and Chevrel phases of M_nS_m clusters Insitu cluster generation by pulsed arc cluster ion source (PACIS) Mass separation by time-of-flight mass spectrometer with reflectron Generation of metal clusters due to gas supply and annealing steps Insitu deposition of the clusters into a MCBJ via soft landing method Pressure: ≥ 10^-7 mbar Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366
	Application Optical characterization of nanomechanical resonators Responsible: Dr. A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366