Contact
Dr. Shavkat Akhmadaliev
c.akhmadaliev
hzdr.de
Phone: +49 351 260 3284
Ion Technology - Implantation & Irradiation Conditions
Following table provides a quick overview about implantation/irradiation conditions, which can be realized using our machine park. In individual cases certain restrictions can apply when combining certain irradiation parameters. Please contact us for further information.
| Ion species |
H - Bi (molecular ions & isotope spearation posssible) |
| Ion energy |
30 eV - 55 MeV |
| Depth range |
few Ångström up to ~150 µm (in Si) |
| Fluences |
107 - 1022 cm-2 |
| Samples size |
up to Ø 200 mm |
| Incidence angle |
0° - 90° |
| Beam Current |
pA - mA (depending on ion species, energy ) |
| Sample cooling |
partially with liquid nitrogen available |
| Sample heating |
up to 1100 °C |
| Vacuum |
< 2.5x10-6 mbar (typically) |
|
Special chambers |
for continous sample rotation |
|
Additional features |
in-situ electrical measurements, |
|
Air cleanliness |
up to class 5 (DIN EN ISO 14644) |
