Setups - FWIZ-N
List of our setups for material modification, imaging, analytical methods and preparation.
Modification
Instrument
|
Functionality
|
Contact
|
|
OrsayFIB
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HV-setup for focussed ion beams:
- LMAIS ion source: < 10 A/cm²
- kinetic energies: < 30 keV
- available ion species: Au, Si, Ge, Ga, Co, Nd, Cr, Er, Ni, …
- local implantations
- nanostructure preparation by focussed ion beams
- lateral resolution for Ga ions: 10 nm
- structure sizes < 50 µm
|
Nico Klingner Lothar Bischoff
|
|
CANION FIB
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|
HV-setup for focussed ion beams:
- LMAIS ion source: < 10 A/cm²
- kinetic energies: < 30 keV
- available ion species: Au, Si, Ge, Ga, Co, Nd, Cr, Er, Ni, …
- nanostructure preparation by focussed ion beams
- lateral resolution for Ga ions: 15 nm
- laser stage for positioning
|
Lothar Bischoff Nico Klingner |
|
Orion NanoFab
|
|
Helium ion microscope:
- Backscattering detector for TOF-SIMS
- Lateral resolution: 0.5 nm (He ions), 1.8 nm (Ne ions)
- Scanning transmission ion microscopy with position-sensitive detector
- Imaging with secondary electrons
|
Gregor Hlawacek |
|
NVision 40
|
|
HV-setup for focussed ion and electron beams:
- nanostructure preparation by focussed Ga ion beams
- lateral resolution FIB: 7 nm
- stage range: 100 mm
- deposition of C and Pt
|
Lothar Bischoff |
|
Orion Plus
|
|
Helium ion microscope:
-
nanostructure preparation by focussed He or Ne ion beams
-
lateral resolution: He 0.5 nm, Ne 1.6 nm
-
structure sizes ranging from nm to µm
|
Gregor Hlawacek |
|
HCI
|
|
UHV setup for highly charged ions:
- available ion species: Ne, Ar, Kr
- kinetic energy: 0.5q to 4.5q keV
- Ne, Ar, Kr implantations
|
René Heller |
|
LEI
|
|
HV-setup for low energy ion irradiation:
- Kaufman-type ion source
- Noble gas ions with kinetic energies of 200 to 1200 eV
- Ion induced surface nanopatterning
- 3 evaporator sources for deposition of metal thin films
- Polar incidence angles of 0° to 90°
- Sample heating up to 600°C
|
Denise Erb |
Imaging
Instrument
|
Functionality
|
Contact
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|
Olympus Ultra Objective
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Atomic force microscope:
- Contact- or tapping-mode AFM
- Spreading resistance measurements
- max. scan area: 20 µm x 20 µm
- optical microscopy
|
Lothar Bischoff
Gregor Hlawacek
Nico Klingner
|
|
Bruker Multimode 8 AFM
|
|
Atomic force microscope:
- Contact- or tapping-mode AFM
- Spreading resistance measurements (in preparation)
- 3D topography imaging with 7 nm lateral resolution
- max. scan area: 15 µm x 15 µm
- optical microscopy
|
Denise Erb |
|
Omicron UHV AFM / STM
|
|
UHV atomic force / scanning transmission microscope:
- Contact- or non-nontact-mode AFM
- STM
- 3D topography imaging with < 1 nm lateral resolution
- max. scan area: 5 µm x 5 µm
- sample heating up to 600°C
|
Stefan Facsko |
|
Orion NanoFab
|
|
Helium ion microscope:
- Backscattering detector for TOF-SIMS
- Lateral resolution: 0.5 nm (He ions), 1.8 nm (Ne ions)
- Scanning transmission ion microscopy with position-sensitive detector
- Imaging with secondary electrons
|
Gregor Hlawacek |
|
Orion Plus
|
|
Helium ion microscope:
- Scanning transmission ion microscopy with position-sensitive detector
- Imaging with secondary electrons
- Backscattering detector
- Investigation of non-conductive samples enabled by charge compensation
|
Gregor Hlawacek |
|
NVision 40
|
|
HV-setup for focussed ion beams and electron beams:
- Lateral resolution SEM: 1.5 nm
- Stage range: 100 mm
|
Lothar Bischoff |
|
NanoSAM
|
|
UHV-setup for electron microscopy:
- Scanning electron microscopy (SEM)
- Scanning Auger electron microscopy (SAM)
|
Denise Erb |
Analytics
Instrument
|
Functionality
|
Contact
|
|
TestFIB
|
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UHV-setup for LMAIS (Liquid Metal Alloy Ion Sources) characterization:
- Mass spectrometry
- Measurement of source energy distribution
- Kinetic ion energy < 10 keV
|
Lothar Bischoff Nico Klingner |
|
NVision 40
|
|
HV-setup for focussed ion beams and electron beams:
- Energy-dispersive X-ray spectroscopy (EDX)
- Electron backscattering diffraction (EBSD)
|
Lothar Bischoff |
|
Orion NanoFab
|
|
Helium ion microscope:
- Backscattering detector for TOF-SIMS
- Lateral resolution: 0.5 nm (He ions), 1.8 nm (Ne ions)
- Scanning transmission ion microscopy with position-sensitive detector
- Imaging with secondary electrons
|
Gregor Hlawacek |
|
HCI
|
|
UHV setup for highly charged ions:
- available ion species: Ne, Ar, Kr
- kinetic energy: 0.5q to 4.5q keV
- charge states < q = 40 for Ar
- ion spectroscopy
- sample temperatures of -200°C to +1000°C
|
René Heller |
|
NanoSAM
|
|
UHV-setup for surface analytics:
- (Scanning) Auger electron spectroscopy (AES / SAM)
- X-ray photo-electron spectroscopy (XPS) (in preparation)
- cathodoluminescence (CL) (in preparation)
- depth profiling (in preparation)
|
Denise Erb |
Preparation
Instrument
|
Functionality
|
Contact
|
|
Spot Welder
|
|
Spot welding device:
- Bonding of metal wires and sheets
|
Lothar Bischoff Wolfgang Pilz |
|
Etching Setup
|
|
Etching setup:
- Electrochemical etching of tungsten tips for ion sources
|
Lothar Bischoff Wolfgang Pilz Nico Klingner |
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Leica EM TXP
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Mechanical preparation:
- Milling, sawing, grinding, polishing
- Preparations for light microscopy and electron microscopy etc.
|
Nico Klingner |
|
ArBlade 5000 CTC
|
|
HV-device for ion beam milling:
- Unfocussed Ar-beam with kinetic energy of 0.1 to 8 keV
- Ion milling for surface smoothing/preparation of cross-sections
- Milling rates of up to 1 mm/hour
|
Nico Klingner |
|
LMAIS Präparation
|
|
HV-device for LMAIS (Liquid Metal Alloy Ion Sources)
preparation:
- Cleaning and melting of alloys
- Wetting, filling, and functional testing
|
Lothar Bischoff Wolfgang Pilz Nico Klingner |