Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
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42024 Publications
Bioactive composite ceramics in the hydroxyapatite-tricalcium phosphate system
Kubarev, O. L.; Komlev, V. S.; Maitz, M.; Barinov, S. M.
- Doklady Chemistry 413(2007)1, 72-74
Permalink: https://www.hzdr.de/publications/Publ-9986
Free transverse vibrations of nano-to-micron scale beams
Xu, M.
Abstract
In the present work, the integral equation approach and the non-local elasticity theory are employed to investigate the free transverse vibrations of nano-to-micron scale beams. The frequency equation is analytically formulated into an eigenvalue problem of a matrix with an infinite order. The numerical calculation is implemented by truncating this matrix to a finite order one. It is found that the impact of the non-local effect on the natural frequencies and vibrating modes is negligible for the beams with micrometre scale length. But when the length of beams reaches the nanoscale, the non-local effect becomes important; especially for the high-order natural frequencies and vibrating modes.
- Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 462(2006)2074, 2977-2995
Permalink: https://www.hzdr.de/publications/Publ-9985
Towards bio-inspired metal complexes for targeted radionuclide therapy
Juran, S.
Abstract
-
Lecture (Conference)
Supraphone meeting 2007, 31.05.-03.06.2007, Lipari, Italy
Permalink: https://www.hzdr.de/publications/Publ-9984
Effect of increase of radiation dose on local control relates to pre-treatment FDG uptake in FaDu tumours in nude mice
Schütze, C.; Bergmann, R.; Yaromina, A.; Hessel, F.; Kotzerke, J.; Steinbach, J.; Baumann, M.; Beuthien-Baumann, B.
Abstract
Objectives:
To investigate whether heterogeneity in [18F]2-fluoro-2-deoxy-D-glucose (FDG) uptake in a single tumour line, i.e. in tumours with identical genetic background, relates to radiation response.
Materials and methods:
Sixty-two human FaDu head and neck squamous cell carcinomas in nude mice with a diameter of 7 mm entered the study. FDG-PET scanning was performed without anaesthesia on an animal PET scanner immediately prior to irradiation in order to determine maximum standardized uptake values (SUVmax). Single dose irradiations of 25 or 35 Gy were applied under normal blood flow conditions using 200 kV X-rays (0.5 mm Cu, ~ 1.2 Gy min-1). The mice
were observed for 120 days after irradiation, experimental endpoint was local tumour control evaluated using the
Kaplan-Meier method.
Results:
Analyzing all 62 animals, tumour control probability after irradiation with 25 Gy was significantly lower than after irradiation with 35 Gy (29% vs. 57%, log rank p = 0.016). Pre-treatment SUVmax values ranged from 0.72 to 3.47, the median SUVmax value was 1.59. In tumours with FDG uptake less than the median SUVmax, local control was 37% after 25 Gy vs. 47% after 35 Gy (p = 0.37). In contrast, substantial differences in local tumour control were found in tumours with FDG uptake above the median SUVmax (24% vs. 71%, p = 0.006). Multivariate Cox analysis revealed a significant decrease of hazard of recurrence with increasing dose and SUVmax.
Conclusions:
An increase of radiation dose had a greater effect on local control in FaDu tumours with higher FDG uptake than in tumours with lower FDG uptake. This supports the hypothesis that pre-treatment FDG-PET may provide
useful information for heterogeneous radiation dose prescription in subvolumes of tumours of individual patients. As only one tumour model was studied and single doses were applied, confirmatory investigations using further tumour models and fractionated radiotherapy are warranted.
Keywords: (18F]FDG; Positron emission tomography; Irradiation; Squamous cell carcinoma; Human tumour xenografts; Local tumour control
-
Radiotherapy and Oncology 83(2007), 311-315
DOI: 10.1016/j.radonc.2007.04.033
Cited 56 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-9983
DNA-Backbone Dynamics Studied by Time-Resolved Infrared Spectroscopy
Fahmy, K.
Abstract
DNA-Backbone Dynamics Studied by Time-Resolved Infrared Spectroscopy
-
Lecture (Conference)
Inst. of Education and Research, 12.12.2006, Pune, India
Permalink: https://www.hzdr.de/publications/Publ-9982
Emittance Compensation of a Superconducting RF Photoelectron Gun by a Magnetic RF Field
Janssen, D.; Volkov, V.
Abstract
For compensation of transverse emittance in normal conducting RF photoelectron guns a static magnetic field is applied. In superconducting RF guns the application of a static magnetic field is impossible. Therefore we put instead of a static field a magnetic RF field (TE - mode) together with the corresponding accelerating mode into the superconducting cavity of the RF gun. For a 3 _ cell cavity of the superconducting gun with frequencies f = 1.3GHz for the accelerating mode and f = 3.9 GHz for the magnetic mode and a bunch charge of 1 nC a transversal emittance of 0.5 mm mrad has been obtained. In this case the maximal field strength on the axis were Ez = 50 MV/m for the accelerating mode and Bz = 0.34 T for the magnetic mode.(This corresponds to Bs(max) = 0.22T on the surface of the cavity). Possibilities for the technical realization (input of RF power for the TE mode, tuning of two frequencies in one cavity, phase stability) are discussed.
Involved research facilities
- SRF Gun
-
Contribution to proceedings
9th European Particle Accelerator Conference EPAC 2004, 05.-09.07.2004, Lucerne, Switzerland
Contributions to the Proceedings, 9th European Particle Accelerator Conference EPAC 2004, MOPKF014, 92-9083-231-2, 330-332
Permalink: https://www.hzdr.de/publications/Publ-9981
Molecular switching in GPCRs: FTIR- and Fluorescence-Spectroscopyic Identification of Functional Modules in Rhodopsin
Fahmy, K.
Abstract
Molecular switching in GPCRs: FTIR- and Fluorescence-Spectroscopyic Identification of Functional Modules in Rhodopsin
-
Lecture (Conference)
Inst. of Technology Madras, 07.12.2006, Chennai, India
Permalink: https://www.hzdr.de/publications/Publ-9980
Der weiterbildende Masterstudiengang "Medical Radiation Sciences" an der TU Dresden
Enghardt, W.
Abstract
Der weiterbildende Masterstudiengang "Medical Radiation Sciences" an der TU Dresden
-
Invited lecture (Conferences)
Technische Fachhochschule Berlin, 12.12.2006, Berlin, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9979
Präzisionsbestrahlung auf der Basis biologischer Daten
Enghardt, W.
Abstract
Präzisionsbestrahlung auf der Basis biologischer Daten
-
Invited lecture (Conferences)
Präzisionsbestrahlung auf der Basis biologischer Daten, 07.01.2006, Leipzig, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9978
In-beam PET in der Hadronentherapie
Enghardt, W.
Abstract
In-beam PET in der Hadronentherapie
-
Invited lecture (Conferences)
37. Jahrestagung der Deutschen Gesellschaft für Medizinische Physik, 21.09.2006, Regensburg, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9977
Application of the SUSA and CIAU methods to the calculation of a NPP start-up experiment using a coupled code system
Kliem, S.; Bousbia Salah, A.; Rohde, U.; DAuria, F.
Abstract
The modeling of complex transients in Nuclear Power Plants (NPP) remains a challenging topic for Best Estimate three-dimensional coupled code computational tools. This technique is, nowadays, extensively used since it allows decreasing conservatism in the calculation models and performs more realistic simulating and more precise consideration of multidimensional effects under complex transients in NPPs. Therefore, large international activities are in progress aiming to assess the capabilities of coupled codes and the new frontiers for the nuclear technology that could be opened by this technique. In the current paper a contribution to the assessment and validation of coupled code technique through the Kolzoduy VVER100 pump trip test is performed. For this purpose, the coupled REALP5/3.3-PARCS/2.6 code is used. The code results were assessed against experimental data and the overall data comparison shows good agreements between the calculations and the global kinetic and thermal-hydraulic aspects observed experimentally. Further investigations through the use of two antagonist GRS and the CIAU methods, in order to evaluate and quantify the origin of the observed discrepancies. It was revealed on one hand that relative error quantification discrepancies exist between the two approaches, and on the other hand deviations between code predictions and measurements are mainly due to the used models for evaluating and modeling of the Doppler feedback effect.
-
Lecture (Conference)
First Workshop on OECD Benchmark for Uncertainty Analysis Modeling, 10.-11.05.2007, Paris, France
Permalink: https://www.hzdr.de/publications/Publ-9976
Der postgraduale Masterstudiengang "Medical Radiation Sciences" und die Ausbildung von Medizinphysik-Experten in Dresden
Enghardt, W.
Abstract
Der postgraduale Masterstudiengang "Medical Radiation Sciences" und die Ausbildung von Medizinphysik-Experten in Dresden
-
Invited lecture (Conferences)
12. Jahrestagung der Deutschen Gesellschaft für Radioonkologie (DEGRO), 27.05.2006, Dresden, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9975
Visionen der Medizinphysik
Enghardt, W.
Abstract
Visionen der Medizinphysik
-
Invited lecture (Conferences)
12. Jahrestagung der Deutschen Gesellschaft für Radioonkologie (DEGRO), 25.05.2006, Dresden, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9974
DYN3D/ATHLET Calculations of Exercise 2 Influence of Coolant Mixing on the Power Behaviour
Kliem, S.; Kozmenkov, Y.; Höhne, T.; Rohde, U.
Abstract
The results of the basic solution of the V1000 coolant transient benchmark obtained by means of the coupled code system DYN3D/ATHLET are compared to a variation calculation, where the coolant mixing is simulated using the CFD code CFX-5.
-
Lecture (Conference)
V1000CT5 Workshop, 07.05.2007, Paris, France
Permalink: https://www.hzdr.de/publications/Publ-9973
Der postgraduale Masterstudiengang "Medical Radiation Sciences" in Dresden
Enghardt, W.
Abstract
Der postgraduale Masterstudiengang "Medical Radiation Sciences" in Dresden
-
Invited lecture (Conferences)
XVIII. Winterschule der DGMP, 14.03.2006, Pichel, Österreich
Permalink: https://www.hzdr.de/publications/Publ-9972
The Control System of Strahlungsquelle ELBE at Forschungszentrum
Leege, K.-W.
Abstract
Technisches Seminar, DESY Zeuthen, 13.03.2007 Zeuthen
Keywords: Control System of Strahlungsquelle ELBE
-
Invited lecture (Conferences)
The Control System of Strahlungsquelle ELBE at Forschungszentrum, 13.03.2007, Zeuthen, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9971
Second Dynamic AER Benchmark Comparison of results
Kliem, S.; Rohde, U.
Abstract
A three-dimensional hexagonal dynamic benchmark describing the ejection of a peripheral control rod in a VVER-440 core with neutron kinetics and simple adiabatic Doppler feedback. The initially critical reactor experiences a power excursion without any reactor scram. Nodal solutions are compared to a reference solution obtained with the fine mesh diffusion code CRONOS2.
-
Lecture (Conference)
Annual Meeting of the AER Working Group D, 08.-09.05.2007, Paris, France
Permalink: https://www.hzdr.de/publications/Publ-9970
WP1: Development of PET/CT for oncology
Enghardt, W.
Abstract
WP1: Development of PET/CT for oncology
-
Lecture (others)
BioCare Meeting, EU FP6 Integrated Project Biocare, 08.-09.05.2006, Dresden, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9969
In-beam PET for radiotherapy monitoring
Enghardt, W.
Abstract
In-beam PET for radiotherapy monitoring
-
Invited lecture (Conferences)
Conf. on Clinical and Experimental Research in Radiation Oncology, 24.01.2006, Les Menuires, France
Permalink: https://www.hzdr.de/publications/Publ-9968
Quasi-Particle Model for the EOS - critical point imaginary μ
Bluhm, M.
Abstract
Quasi-Particle Model for the EOS - critical point imaginary μ
-
Lecture (Conference)
Workshop des Virtuellen Inst., 16.10.2006, Rathen, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9967
QCD Equation of State in a Quasi-Particle Perspective
Bluhm, M.
Abstract
QCD Equation of State in a Quasi-Particle Perspective
-
Lecture (Conference)
Workshop for Young Scientists on the Physics of Ultrarelativistic Nucleus-Nucleus Collisions, Hot Quarks 2006, 15.-20.05.2006, Villasimius, Italy
Permalink: https://www.hzdr.de/publications/Publ-9966
Lattice QCD Based Equation of State - within a Quasi-Particle Perspective
Bluhm, M.
Abstract
Lattice QCD Based Equation of State - within a Quasi-Particle Perspective
-
Lecture (Conference)
DPG Tagung, 24.03.2006, München, Dtl. -
Lecture (Conference)
Int. Workshop on Hot and Dense Matter in Relativistic Heavy Ion Collisions, 09.04.2006, Budapest, Hungary
Permalink: https://www.hzdr.de/publications/Publ-9965
Graphite nanostructures in diamond produced by focused ion beam
Bischoff, L.; Heera, V.
Abstract
There is a growing interest in graphite nanostructures since the discovery of exotic quantum properties of and the evidence for a field effect in few-layer-graphene (FLG) [1]. A promising method to produce mechanically stable and electrically isolated graphite nanostuctures is focused ion beam (FIB) implantation into diamond and subsequent annealing [2].
Graphite nanostructures with dimensions down to 100 nm, i.e. wires and electrodes including contact pads, which enable Hall and field effect measurements are produced by 30 keV Ga+ FIB implantation in a (100)- and (111)-oriented diamond surface followed by a subsequent annealing in the temperature range from 600° to 1500°C in vacuum. The structural quality and the electrical properties of the graphite nanostructures are investigated in dependence on the preparation conditions by means of AFM, SEM and electrical measuring techniques.
[1] K. S. Novoselov et al. Science 306, 666 (2004) and Nature 438, 197 (2005)
[2] A. M. Zaitsev and I. A. Dobrinet, phys. stat. sol. (a) 203, R35 (2006)
Keywords: FIB; diamond; graphite nanostructures; AFM; SEM; electrical properties
-
Lecture (Conference)
E-MRS Spring Meeting, Symposium L, 28.05.-01.06.2007, Strasbourg, France
Permalink: https://www.hzdr.de/publications/Publ-9964
Renormalisation - from classical theory to quantum electrodynamics
Zschocke, S.
Abstract
Renormalisation - from classical theory to quantum electrodynamics
-
Lecture (others)
Universitet Bergen, 03.06.2005, Bergen, Norway
Permalink: https://www.hzdr.de/publications/Publ-9963
In-Medium Hadronic Observables: Impact of Four-Quark Condensates
Thomas, R.
Abstract
In-Medium Hadronic Observables: Impact of Four-Quark Condensates
-
Lecture (others)
Universität Bielefeld, 29.09.2005, Bielefeld, Deutschland -
Lecture (Conference)
VI Workshop, 08.10.2005, Prerow, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9962
Four-Quark condensates in QCD Sum Rules for Nucleons and Mesons
Thomas, R.
Abstract
Four-Quark condensates in QCD Sum Rules for Nucleons and Mesons
-
Lecture (Conference)
DPG Tagung, 04.03.2005, Berlin, Deutschland -
Lecture (others)
ITP, 06.06.2005, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9961
Gluon Radiation of Heavy Quarks in Deconfined Matter
Thomas, R.
Abstract
Gluon Radiation of Heavy Quarks in Deconfined Matter
-
Lecture (Conference)
Arbeitstreffen Kernphysik, 02.02.2005, Schleching, Germany
Permalink: https://www.hzdr.de/publications/Publ-9960
Investigation of ultra-thin layers by RF-GD-OES
Hoffmann, V.; Hübner, R.; Hecker, M.; Baunack, S.; Mattern, N.; Wetzig, K.; Grötzschel, R.
Abstract
The continuous scaling down of the dimensions of Cu interconnect structures in microelectronics requires ultra thin barriers against Cu diffusion. Typically 10 nm thin films of pure, binary and ternary nitrides of refractory metals as Ta, TaN, TaSiN, WN are investigated to prevent effectively the Cu diffusion into the substrates. X-ray diffraction, depth profile analysis by glow discharge optical emission spectrometry (GD-OES), Auger electron spectrometry (AES) and Rutherford backscattering (RBS) and electron microscopy are used to correlate results of microstructure and phase characterization with diffusion phenomena [1-3].
The degradation of the barrier performance after annealing was controlled by depth profile analysis using GD-OES [4]. For each barrier composition a critical temperature was found above which a significant Cu concentration in the substrate occurred in the GD-OES signal. Apart from the Cu diffusion, also the onset of barrier material diffusion towards the surface could be traced by GD-OES. At GD-OES depth profiling of laterally inhomogeneous layers containing conducting as well as non conducting parts it became clear that focusing and defocusing effects of the sputtering ions exist.
Essential properties of these barrier layers, as electrical and thermal conductivity and resistivity against oxidation, are optimized by variation of the chemical composition. Phase formation and transformation or diffusion also depends strongly on the initial distribution of elements in the layer system. Therefore, an accurate quantification of the element concentration is needed for reliable production and thorough investigation. However, all applied methods have special advantages, disadvantages and limitations. With RBS, e.g., it is impossible to determine N and the layers must be deposited on C, but RBS delivers absolute concentrations without calibration. AES has an excellent lateral and depth resolution, but suffers from preferential sputtering and matrix effects and needs, as GD-OES, standard material for calibration. Therefore, only the combination of all could solve this requirement successfully.
[1] N. Mattern, M. Hecker, D. Fischer, C. Wenzel, N. Schell, W. Matz, H. Engelmann, E. Zschech, Microelectronics Reliability 40, 1765 (2000)
[2] M. Hecker, D. Fischer, V. Hoffmann, H.-J. Engelmann, A. Voss, N. Mattern, C. Wenzel, C. Vogt, E. Zschech, Thin Solid Films, 414, 2, 184 (2002)
[3] R. Huebner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, C. Wenger, H.-J. Engelmann, C. Wenzel, E. Zschech, J.W. Bartha , Thin Solid Films, 437, 248 (2003)
[4] V. Hoffmann, R. Dorka, L. Wilken, V.D. Hodoroaba, K. Wetzig, Surface and Interface Analysis 35, 7, 575 (2003)
-
Lecture (Conference)
2004 Winter Conference on Plasma Spectrochemistry, 05.-10.01.2004, Fort Lauderdale, U.S.A.
Permalink: https://www.hzdr.de/publications/Publ-9959
A method of proceeding the elements of the system matrix for iterative reconstruction of PET data
Shakirin, G.
Abstract
A method of proceeding the elements of the system matrix for iterative reconstruction of PET data
-
Lecture (others)
IBT, 15.12.2005, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9958
Der Rossendorfer Freie-Elektronen Laser
Seidel, W.; Wünsch, R.
Abstract
Der Rossendorfer Freie-Elektronen Laser
-
Lecture (others)
IKTP, 27.01.2005, Dresden, Deutschland -
Lecture (others)
ILT, 17.11.2005, Aachen, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9957
Ion Beam Synthesis and Patterning by FIB
Bischoff, L.; Schmidt, B.; Akhmadaliev, C.
Abstract
Die Ionenstrahlsynthese mittels Fokussierten Ionenstrahl (FIB) wird am Beispiel des Kobalt-Disilizides erläutert und demonstriert sowie Anwendungen aufgezeigt.
Weitere FIB Applikationen im Bereich der Nano-Technologie, wie das Vorstrukturieren (Templating), die Ga-Implantation und das selektive anisitrope nasschemiche Ätzen als auch die Metallorganische CVD mit dem FIB werden diskutiert.
Keywords: FIB; Ionenstrahlsysnthese; Nanostrukturen
-
Lecture (Conference)
RUBion Workshop: Ionenstrahlen und Nanotechnologie, 10.-11.05.2007, Bochum, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9956
Nuclear-structure and nuclear-astrophysics experiments at the superconducting electron accelerator ELBE
Schwengner, R.
-
Invited lecture (Conferences)
Invited Lecture at the XVI International School on Nuclear Physics, Neutron Physics and Nuclear Energy, 19.-26.09.2005, Varna, Bulgaria
Permalink: https://www.hzdr.de/publications/Publ-9955
The decay of 1+ states as a new probe of the structure of 0+ shape isomers
Schwengner, R.
-
Lecture (Conference)
DPG Tagung, 04.-09.03.2005, Berlin, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9954
An estimate of the K+ cross section in the reaction C+C at 2AGeV
Sadovski, A.
-
Lecture (Conference)
HADES PID Meeting, 12.-14.12.2005, Rez, Czech Republic
Permalink: https://www.hzdr.de/publications/Publ-9953
K+ production in Carbon-Carbon collisions at 2GeV per nucleon measured with HADES experiment
Sadovski, A.
-
Lecture (others)
IKTP, 23.06.2005, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9952
K+ production in the reaction C+C at 2AGeV
Sadovski, A.
-
Lecture (Conference)
HADES Collab. Meeting XV, 07.-12.06.2005, Dubna, Russia
Permalink: https://www.hzdr.de/publications/Publ-9951
High resolution Runge-Kutta tracking for kaon reconstruction
Sadovski, A.
-
Lecture (Conference)
DPG Tagung, 04.03.2005, Berlin, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9950
Mensch und Strahlung
Pawelke, J.
-
Lecture (others)
Lange Nacht der Wissenschaften, 01.07.2005, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9949
Design and construction of a prototype TRD for the CBM experiment at GSI
Naumann, L.
-
Invited lecture (Conferences)
GSI Darmstadt, 08.-09.12.2005, Darmstadt, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9948
Testing RPC timing at the Rossendorf electron Linac ELBE
Kotte, R.
-
Lecture (Conference)
CBM-RPC-Hadron-ID workshop, 14.12.2005, Darmstadt, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9947
FOPI plastic wall status (S279, S297)
Kotte, R.
-
Lecture (Conference)
FOPI collaboration meeting, 12.-13.12.2005, Darmstadt, Dtl.
Permalink: https://www.hzdr.de/publications/Publ-9946
RPC timing tests at ELBE
Kotte, R.
-
Lecture (Conference)
FOPI collaboration meeting, 12.-13.12.2005, Darmstadt, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9945
Seeking sub-100ps timing without fast reference detector at the Rossendorf Electron Linac ELBE
Kotte, R.
-
Lecture (Conference)
FOPI collaboration meeting, 26.-28.05.2005, Split, Croatia
Permalink: https://www.hzdr.de/publications/Publ-9944
Development of a Neutron Time-of-Flight Source at ELBE Accelerator
Klug, J.
-
Lecture (Conference)
Int. Conf. on New Trends in Physics Applications and Technology, 09.09.2005, Pavia, Italy
Permalink: https://www.hzdr.de/publications/Publ-9943
Flash lamp processing for Group IV semiconductors
Skorupa, W.
Abstract
The flash lamp processing for Group IV semiconductors is discussed.
Keywords: flash lamp processing; semiconductors
-
Lecture (others)
Lecture, Department of Engineering, University of Cambridge, 02.12.2004, Cambridge, UK
Permalink: https://www.hzdr.de/publications/Publ-9942
Blitzlampen-Temperung im msec-Bereich für die SiC-Si-Heteroepitaxie
Skorupa, W.
Abstract
Das Verfahren zur Blitzlampen-Temperung im msec-Bereich für die SiC-Si-Heteroepitaxie wird vorgestellt.
Keywords: flash lamp annealing; silicon; silicon carbide; heteroepitaxy
-
Lecture (others)
Vortrag, Institut für Angewandte Physik, Universität Erlangen-Nürnberg, 11.11.2004, Erlangen, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9941
Silizium-basierte Lichtemission und Blitzlampen-Temperung: Innovationen bei FWI
Skorupa, W.
Abstract
Es wird ein Überblick über Innovationen im Institut FWI bei der Silizium-basierten Lichtemission und der Blitzlampen-Temperung gegeben.
Keywords: light emission; silicon; ion implantation; flash lamp annealing
-
Lecture (others)
Vortrag, Senioren-Club des FZR,, 04.11.2004, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9940
Silicon-based light emission from ion-implanted materials
Skorupa, W.
Abstract
An overview about silicon-based light emission from ion-implanted materials is given.
Keywords: light emission; silicon; ion implantation
-
Lecture (others)
Lecture, Department of Physics, Oslo University, 12.08.2004, Oslo, Norway
Permalink: https://www.hzdr.de/publications/Publ-9939
EPOS ELBE positron source: positron annihilation multifacility project in Dresden
Krause-Rehberg, R.; Bondarenko, V.; Brauer, G.
Abstract
The EPOS ELBE positron source, a positron annihilation multifacility project in Dresden, is presented.
Keywords: positron source
-
Lecture (others)
MATERIALICA, Neue Messe München, 21.-23.09.2004, München, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9938
Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers
Yankov, R. A.; Gebel, T.; Rebohle, L.; Trautmann, T.; Skorupa, W.; Gauglitz, G.; Frank, R.
Abstract
Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers
Keywords: efficient light emitters; nanocluster; silicon dioxide
-
Contribution to external collection
Photonic Crystal Materials and Nanostructures: Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers, SPIE vol. 5450, Bellingham, WA, USA: SPIE, 2004, 578-585
Permalink: https://www.hzdr.de/publications/Publ-9937
Enhancement of the photoluminescence of silicon nanocrystals under the influence of electric field
Vandyshev, E. N.; Zhuravlev, K. S.; Gilinsky, A. M.; Skorupa, W.
Abstract
The effect of electric field generated by the application of surface acoustic waves on photoluminescence (PL) of silicon nanocrystals embedded in SiO2 films is studied. It is shown that the application of electric field results in an increase in the intensity of nanocrystal PL, the increase amounting to 10% at a field amplitude of 6 kV cm(-1). The results are discussed within the frame of the self-trapped exciton model.
Keywords: photoluminescence; silicon dioxide; ion implantation; nanocrystals
- Physica E 21(2004)2-4, 304-307
Permalink: https://www.hzdr.de/publications/Publ-9936
Ion Beam Processing for Silicon - Based Light Emission
Skorupa, W.; Dekorsy, T.; Gebel, T.; Helm, M.; Lysenko, V. S.; Nazarov, A. N.; Osiyuk, I. N.; Rebohle, L.; Schmidt, B.; Sun, J. M.
Abstract
In this talk an overview will be presented regarding the influence of ion irradiation effects and treatments on the formation of silicon-based light emission structures and devices. After a short overview to the complete field-as to my knowledge- we will concentrate on two activities performed at the FZR during the last years, (i) Blue-violet (400 nm) light emitters basing on Metal-Oxide-Silicon capacitors, and, (ii) Infrared (~1µm) light emitters basing on pn-junctions. Both approaches use ion beam processing as a key doping technique of advanced semiconductor technologies. For the first case we employed implantation of group IV ions (C, Si, Ge, Sn) into thermally silicon dioxide layers followed by an appropriate annealing step leading to electroluminescence effects with a power efficiency/external quantum efficiency of ~0.5/10 %. This preparation leads to the formation of semiconductor nanoclusters in the oxide matrix; the luminescence itself is related to defects. Comparing to other oxide production techniques like sputtering or evaporation it is shown that such high electroluminescence values are only possible on the base of ion beam processing, i.e. the combination of nanocluster synthesis and beam-induced energy deposition. For the second case we will demonstrate that appropriate boron implantation and annealing steps can lead to pn-junctions with two electroluminescence bands from bound excitons at 1.065 eV and around 0.95 eV. This effect needs local oversaturation of boron which, of course, is only possible by ion implantation- leading to nanoclusters which produce the necessary doping and strain induced disturbances to the band structure.
Keywords: ion beam processing; silicon; light emission
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Contribution to proceedings
Materials Research Society Fall Meeting, 01.-05.12.2003, Boston, USA
Materials Research Society Fall Meeting, vol. 792 (2004), R 11.1.1
Permalink: https://www.hzdr.de/publications/Publ-9935
Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping
Gebel, T.; Rebohle, L.; Yankov, R. A.; Nazarov, A. N.; Skorupa, W.
Keywords: Nanocluster; silicon dioxide layers; electroluminescence; charge trapping
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Contribution to external collection
Pistora, Jaromir (u.a.): Microwave and Optical Technology 2003, Proceedings of the SPIE, Volume 5445, Bellingham, WA, USA: SPIE Int. Soc. Opt. Eng., 2004, 284-289
Permalink: https://www.hzdr.de/publications/Publ-9934
Comparative evaluation of coolant mixing experiments at the ROCOM, Vattenfall, and Gidropress test facilities
Kliem, S.; Hemström, B.; Bezrukov, Y.; Höhne, T.; Rohde, U.
Abstract
Coolant mixing is an important mitigative mechanism against reactivity accidents caused by local boron dilution. Experiments on coolant mixing were carried out at three different test facilities representing three different reactor types. These are the ROCOM test facility modelling a German KONVOI-type reactor, the Vattenfall test facility being a model of a Westinghouse three-loop PWR and the Gidropress test facility modelling a VVER-1000 PWR. The scenario of the start-up of the first main coolant pump was investigated in all three facilities.
The experiments were accompanied by velocity measurements in the downcomer for the same scenario in the ROCOM and the Vattenfall test facilities. A similar flow structure was found in these measurements in both cases. A maximum of the velocity is measured at the opposite side in regard to the position of the loop with the starting-up pump whilst a recirculation area was found just below this inlet nozzle in both facilities.
The analysis of the slug mixing experiments showed also comparable flow behaviour. In accordance with the velocity measurements, the first part of the deboration is also found on the opposite side. In this region, the maximum deboration is measured in all three cases. These maximum values are in the same order of magnitude for nearly identical initial slug volumes.
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Science and Technology of Nuclear Installations 2007(2007), 25950
DOI: 10.1155/2007/25950
ISSN: 1687-6075 -
Lecture (Conference)
Annual Meeting of the AER Working Group D, 08.-09.05.2007, Paris, France
Permalink: https://www.hzdr.de/publications/Publ-9933
Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Wu, H. S.; Brauer, G.; Anwand, W.; Skorupa, W.
Abstract
Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Keywords: He-implantion; n-6H-SiC; deep level transient spectroscopy
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Contribution to proceedings
Materials Research Society Spring Meeting 2004, 12.-16.04.2004, San Francisco, USA
Silicon carbide materials, processing, and devices 815 (2004), J5.5, New York: Taylor & Francis
Permalink: https://www.hzdr.de/publications/Publ-9932
Slow positron implantation spectroscopy a tool to characterize vacancy-type damage in ion-implanted 6H-SiC
Brauer, G.; Anwand, W.; Coleman, P. G.; Skorupa, W.
Abstract
A lecture is given about slow positron implantation spectroscopy as a tool to characterize vacancy-type damage in ion-implanted 6H-SiC
Keywords: positron beam; SiC; defects
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Lecture (others)
Lecture, Department of Physics, University of Texas at Austin, 19.10.2004, Austin/TX, USA -
Lecture (others)
Lecture, Physics Department, University of Texas at Arlington, 21.10.2004, Arlington/TX, USA -
Lecture (others)
Lecture, Department of Physics, Texas Christian University, 22.10.2004, Ft. Worth/TX, USA
Permalink: https://www.hzdr.de/publications/Publ-9931
Epitaxial 3C-SiC formation at the SiO2/Si interface by C+ Implantation into SiO2 and subsequent annealing
Voelskow, M.; Panknin, D.; Polychroniadis, E. K.; Ferro, G.; Monteil, Y.; Godignion, P.; Mestres, N.; Skorupa, W.; Stoemenos, J.
Abstract
The epitaxial 3C-SiC formation at the SiO2/Si interface by C+ Implantation into SiO2 and subsequent annealing is studied.
Keywords: SiC formation; carbon implantation; SiO2
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Lecture (Conference)
5th European Conference Silicon Carbide and Related Materials, 31.08.-04.09.2004, Bologna, Italy
Permalink: https://www.hzdr.de/publications/Publ-9930
Efficient silicon light emitting diodes by boron implantation: the mechanism
Sun, J. M.; Dekorsy, T.; Skorupa, W.; Schmidt, B.; Mücklich, A.; Helm, M.
Abstract
The mechanism of efficient light emission in boron implanted silicon diodes is discussed.
Keywords: silicon; light emission; boron implantation
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Lecture (Conference)
European Materials Research Society Spring Meeting, 24.-28.05.2004, Strasbourg, France
Permalink: https://www.hzdr.de/publications/Publ-9929
Temperature dependence of efficient silicon light-emitting diodes prepared by ion implantation
Sun, J. M.; Dekorsy, T.; Skorupa, W.; Schmidt, B.; Helm, M.
Abstract
The temperature dependence of efficient silicon light-emitting diodes prepared by ion implantation is investigated.
Keywords: silicon; light emitting diodes; ion implantation
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Lecture (Conference)
DPG Tagung, 08.-12.03.2004, Regensburg, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9928
Physik fernab vom Gleichgewicht: Nanostrukturierung mit Ionenstrahlen
Heinig, K.-H.
Keywords: Nanostruktur; Ionenstrahl
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Lecture (others)
Universität Jena, Physikalisches Kolloquium, 01.11.2004, Jena, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9927
CFD-modelling of mineral wool in the containment sump
Krepper, E.; Cartland-Glover, G.; Grahn, A.; Weiß, F.-P.; Alt, S.; Hampel, R.; Kästner, W.; Seeliger, A.
Abstract
The investigation of insulation debris generation, transport and sedimentation becomes more important with regard to reactor safety research for PWR and BWR, when considering the long-term behavior of emergency core coolant systems during all types of loss of coolant accidents (LOCA). The insulation debris released near the break during a LOCA incident consists of a mixture of disparate particle population that varies with size, shape, consistency and other properties. Some fractions of the released insulation debris can be transported into the reactor sump, where it may perturb/impinge on the emergency core cooling systems.
Open questions of generic interest are for example the particle load on strainers and corresponding pressure drop, the sedimentation of the insulation debris in a water pool, its possible re-suspension and transport in the sump water flow. A joint research project on such questions is being performed in cooperation with Institute of Process Technology, Process Automation and Measuring Technology (IPM) Zittau. The project deals with the experimental investigation and the development of CFD models for the description of particle transport phenomena in coolant flow. While the experiments are performed at the IPM-Zittau, the theoretical work is concentrated at Forschungszentrum Dresden-Rossendorf.
In the paper the basic concepts for CFD modeling are described and feasibility studies including the conceptual design of the experiments are presented.
Keywords: CFD; two-fluid approach; fiber flows
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Lecture (Conference)
Annual Meeting on Nuclear Technology 2007, 22.-24.05.2007, Karlsruhe, Germany -
Contribution to proceedings
Annual Meeting on Nuclear Technology 2007, 22.-24.05.2007, Karlsruhe, Germany
Permalink: https://www.hzdr.de/publications/Publ-9926
Thermal model for flashlamp annealing of 3C-SiC/Si multilayer systems (i-FLASiC)
Smith, M.; Mcmahon, R. A.; Voelskow, M.; Skorupa, W.; Stoemenos, J.
Abstract
A thermal model for flash lamp annealing of 3C-SiC/Si multilayer systems is developed.
Keywords: thermal model; SiC; flash lamp annealing
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Lecture (Conference)
5th European Conference Silicon Carbide and Related Materials, 31.08.-04.09.2004, Bologna, Italy
Permalink: https://www.hzdr.de/publications/Publ-9925
Nanostructure formation with ion beams
Heinig, K.-H.
Abstract
An abstract is not available, please contact the author.
Keywords: ion beam; nanostructure
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Lecture (others)
Lecture at University of Aarhus, 07.10.2004, Aarhus, Danmark
Permalink: https://www.hzdr.de/publications/Publ-9924
Ultra-shallow junctions produced by plasma doping and flash lamp annealing
Skorupa, W.; Yankov, R. A.; Anwand, W.; Voelskow, M.; Gebel, T.; Downey, D. F.; Arevalo, E. A.
Abstract
The way how to fabricate ultra-shallow junctions by plasma doping and flash lamp annealing is demonstrated.
Keywords: ultra-shallow junctions; plasma doping; flash lamp annealing
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Lecture (Conference)
European Materials Research Society Spring Meeting, 24.-28.05.2004, Strasbourg, France
Permalink: https://www.hzdr.de/publications/Publ-9923
Advanced Thermal Processing of Semiconducting Materials Using Flash Lamp Annealing
Skorupa, W.; Panknin, D.; Voelskow, M.; Anwand, W.; Gebel, T.; Yankov, R. A.
Abstract
Advanced Thermal Processing of Semiconducting Materials using Flash Lamp Annealing is Discussed.
Keywords: thermal processing; flash lamp annealing; semiconductors
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Lecture (Conference)
Materials Research Society Spring Meeting, 13.-16.04.2004, San Francisco, USA
Permalink: https://www.hzdr.de/publications/Publ-9922
Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications
Bonafos, C.; Cherkashin, N.; Carrada, M.; Coffin, H.; Ben Assayag, G.; Schamm, S.; Dimitrakis, P.; Normand, P.; Perego, M.; Fanciulli, M.; Mueller, T.; Heinig, K.-H.; Argawal, A.; Claverie, A.
Abstract
An abstract is not available, please contact the authors.
Keywords: Si; nanocrystals; nonvolatile memory
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Lecture (Conference)
2004 MRS Fall Meeting, 29.11.-03.12.2004, Boston, USA
Permalink: https://www.hzdr.de/publications/Publ-9921
Tailoring magnetic nanostructures by ion irradiation
Bernas, H.; Chappert, C.; Devolder, T.; Ravelosona, D.; Mathet, V.; Ferre, J.; Jamet, J. P.; Mougin, A.; Bauer, M.; Repain, V.; Samson, Y.; Marty, A.; Halley, D.; Attane, J.; Heinig, K.-H.; Stamps, R.; Chen, Y.; Suzuki, Y.; Kaitasov, O.; Ruault, M.-O.; Gautrot, S.
Abstract
An abstract is not available, please contact the authors.
Keywords: magnetic nanostructures; ion irradiation
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Lecture (Conference)
14th International Conference on Ion Beam Modification of Materials (IBMM 2004), 05.-10.09.2004, Monterey, USA
Permalink: https://www.hzdr.de/publications/Publ-9919
Optical and microstructural properties of doubly implanted SiO2 layers using combined Ge-Si implantation
Prucnal, S.; Cheng, X. Q.; Sun, J. M.; Kögler, R.; Zuk, J.; Skorupa, W.
Abstract
The optical and microstructural properties of doubly implanted SiO2 layers fabicated combined Ge-Si implantation are investigated.
Keywords: optical properties; defects; microstucture; SiO2; implantation
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Lecture (Conference)
5th Int. Conf. on Ion Implantation and other Applications of Ions and Electrons (ION2004), 14.-17.06.2004, Kazimierz Dolny, Poland
Permalink: https://www.hzdr.de/publications/Publ-9918
2D-arrays of Si nanocrystals embedded in thin SiO2 layers for new memory devices
Perego, M.; Ferrari, S.; Fanciulli, M.; Soncini, V.; Mathiot, D.; Heinig, K.-H.; Müller, T.; Schmidt, B.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Ben Assayag, G.; Bonafos, C.; Carrada, M.; Claverie, A.
Abstract
An abstract is not available, please contact the authors.
Keywords: Si; nanostructures
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Lecture (Conference)
INFM-Workshop, 10.-15.06.2004, Genova, Italy
Permalink: https://www.hzdr.de/publications/Publ-9917
Nucleation control in FLASiC assisted short time liquid phase epitaxy by melt modification
Pezoldt, J.; Polychroniadis, E. K.; Stauden, T.; Ecke, G.; Chassagne, T.; Vennegues, P.; Leycuras, A.; Panknin, D.; Stoemenos, J.; Skorupa, W.
Abstract
The nucleation control in FLASiC assisted short time liquid phase epitaxy by melt modification is studied.
Keywords: nucleation; liquid phase epitaxy; flash lamp processing
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Lecture (Conference)
5th European Conference Silicon Carbide and Related Materials, 31.08.-04.09.2004, Bologna, Italy
Permalink: https://www.hzdr.de/publications/Publ-9916
Ion beam assisted Ge nanocrystallization in Ta2O5 films
Peeva, A.; Kalitzova, M.; Zollo, G.; Beshkov, G.; Vitali, G.; Skorupa, W.
Abstract
The ion beam assisted formation of Ge nanocrystals in Ta2O5 films is studied.
Keywords: ion beam assisted naocrystallization
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Lecture (Conference)
13th Int. School on Condensed Matter Physics, 30.08.-03.09.2004, Varna, Bulgaria
Permalink: https://www.hzdr.de/publications/Publ-9915
Detailed profiling of ion implantation induced excess vacancies in silicon
Peeva, A.
Abstract
Profiles of excess vacancies in silicon produced by ion implantation are studied by TEM.
Keywords: excess vacancies; Si; ion implantation
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Lecture (others)
Arbeitstreffen Punktdefekte TU Dresden, 01.-02.04.2004, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9914
E1/E2 an Z1/Z2 deep level defects in n-type 6H silicon carbide induced by electron irradiation and He implantation
Ling, C. C.; Cheng, X. D.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.
Abstract
E1/E2 an Z1/Z2 deep level defects in n-type 6H silicon carbide induced by electron irradiation and He implantation are studied.
Keywords: deep levels; SiC; electron irradiation; He implantation
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Lecture (Conference)
27th International Conference on the Physics of Semiconductors (ICPS-27), 26.-30.07.2004, Flagstaff, USA
Permalink: https://www.hzdr.de/publications/Publ-9913
EPOS an intense positron beam project at the Research Center Rossendorf
Krause-Rehberg, R.; Brauer, G.; Sachert, S.; Bondarenko, V.; Rogov, A.; Noack, K.
Abstract
EPOS an intense positron beam project at the Research Center Rossendorf is presented
Keywords: intense positron Beam
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Lecture (Conference)
International Symposium on Positron Beam and its Application, 29.-30.10.2004, Wuhan, China
Permalink: https://www.hzdr.de/publications/Publ-9912
Design of a mono-energetic positron source for positron lifetime measurements at the radiation source ELBE
Krause-Rehberg, R.; Sachert, S.; Brauer, G.; Rogov, A.; Noack, K.; Michel, P.
Abstract
The design of a mono-energetic positron source for positron lifetime measurements at the radiation source ELBE is presented.
Keywords: mono-energetic positron source
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Lecture (Conference)
18th International conference on the application of accelerators in research and industry (CAARI2004), 10.-15.10.2004, Ft. Worth/TX, USA
Permalink: https://www.hzdr.de/publications/Publ-9911
Investigation of gettering effects in CZ-type Silicon with SIMS
Krecar, D.; Fuchs, M.; Kögler, R.; Hutter, H.
Abstract
Gettering effects in CZ-type Silicon are investigated with SIMS
Keywords: gettering; SIMS; Si; defects
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Lecture (Conference)
13th Arbeitstagung Angewandte Oberflächenanalytik (AOFA), 14.-17.10.2004, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9910
Effects of ion beam induced excess vacancies in silicon: analysis, modelling, application
Kögler, R.; Eichhorn, F.; Mücklich, A.; Skorupa, W.; Serre, C.; Perez-Rodriguez, A.
Abstract
Effects of ion beam induced excess vacancies in silicon are discussed.
Keywords: vacancies; silicon; defect engineering
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Lecture (Conference)
5th Int. Conf. on Ion Implantation and other Applications of Ions and Electrons (ION2004), 14.-17.06.2004, Kazimierz Dolny, Poland
Permalink: https://www.hzdr.de/publications/Publ-9909
Investigation of defects induced by ion implantation of noble gases in yttria-stabilized zirconia
Grynszpan, R. I.; Fradin, J.; Saude, S.; Thome, L.; Anwand, W.; Brauer, G.
Abstract
Investigation of defects induced by ion implantation of noble gases in yttria-stabilized zirconia
Keywords: defects; ion implantation; zirconia; PAS
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Lecture (Conference)
18th International conference on the application of accelerators in research and industry (CAARI2004), 10.-15.10.2004, Ft. Worth/TX, USA
Permalink: https://www.hzdr.de/publications/Publ-9908
Microarrays of miniaturized silicon-based light sources: fabrication and use
Gebel, T.; Rebohle, L.; Yankov, R. A.; Skorupa, W.; Gauglitz, G.; Frank, R.
Abstract
Microarrays of miniaturized silicon-based light sources: fabrication and use
Keywords: silicon; light emission; LED
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Lecture (others)
Statusseminar Chiptechnologien, Mikroarrays, Hygiene und Gesundheit, DECHEMA, Frankfurt/M., 26.-27.01.2004, Frankfurt/M., Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9907
Microstructural characterization of 3C-SiC thin films epitaxially formed by the flash lamp process (FLASIC)
Ferro, G.; Panknin, P.; Polychroniadis, E. K.; Monteil, Y.; Skorupa, W.; Stoemenos, J.
Abstract
Microstructural characterization of 3C-SiC thin films epitaxially formed by the flash lamp process (FLASIC)
Keywords: flash lamp; annealing; SiC
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Lecture (Conference)
5th Europ. Conf. Silicon Carbide and Related Materials, 31.08.-04.09.2004, Bologna, Italy
Permalink: https://www.hzdr.de/publications/Publ-9906
Positron annihilation spectroscopy of ultra fine-grained metals prepared by severe plastic deformation
Cizek, J.; Prochazka, I.; Kuzel, R.; Matej, Z.; Cherkaska, V.; Cieslar, M.; Smola, B.; Stulikova, I.; Brauer, G.; Anwand, W.; Islamgaliev, R. K.; Kulyasova, O.
Abstract
In the present work, positron annihilation spectroscopy (PAS) is employed for microstructure investigations of various ultra fine grained (UFG) metals (Cu, Ni, Fe) prepared by severe plastic deformation (SPD), namely high-pressure torsion (HPT) and equal channel angular pressing (ECAP): Generally, UFG metals prepared using both the techniques exhibit two kinds of defects introduced by SPD: dislocations and small microvoids. The size of the microvoids is determined from the PAS data. Significantly larger microvoids are found in HPT deformed Fe and Ni compared to HPT deformed Cu. The microstructure of UFG Cu prepared by HPT and ECAP is compared and the spatial distribution of defects in UFG Cu samples is characterized. In addition, the mircrostructure of a pure UFG Cu prepared by HPT and HPT deformed Cu+Al2O3 nanocomposite (GlidCop) is compared.
Keywords: PAS
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Lecture (Conference)
35th Polish Seminar on Positron Annihilation, 20.-24.09.2004, Turawa, Poland
Permalink: https://www.hzdr.de/publications/Publ-9905
-Hydrogen-induced defects in niobium studied by positron annihilation spectroscopy
Cizek, J.; Prochazka, I.; Kuzel, R.; Becvar, F.; Cieslar, M.; Brauer, G.; Anwand, W.; Kirchheim, R.; Pundt, A.
Abstract
Our aim in the present work was to investigate changes of the defect structure of bulk niobium induced by hydrogen loading. The evolution of the microstructure with increasing hydrogen concentration was studied by x-ray diffraction and two complementary techniques of positron annihilation spectroscopies (PAS), namely positron lifetime spectroscopy and slow positron implantation spectroscopy with the measurement of the Doppler broadening, in defect-free Nb (99.9%) and Nb containing a remarkable number of dislocations. These samples were electrochemically loaded with hydrogen up to xH=0.06 [H/Nb], i.e. in the alpha-phase region, and it was found that the defect density increases with hydrogen concentration in both Nb samples. This means that hydrogen-induced defects are created in the Nb samples. A comparison of PAS results with theoretical calculations revealed that vacancy-hydrogen complexes are introduced into the samples due to hydrogen loading. Most probably these are vacancies surrounded by 4 hydrogen atoms.
Keywords: PAS
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Lecture (Conference)
The International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications MH2004, 05.-10.09.2004, Cracow, Poland
Permalink: https://www.hzdr.de/publications/Publ-9904
-Positron annihilation studies of microstructure of ultra fine grained metals prepared by severe plastic deformation
Cizek, J.; Prochazka, I.; Smola, B.; Stulikova, I.; Kuzel, R.; Cieslar, M.; Matej, Z.; Cherkaska, V.; Brauer, G.; Anwand, W.; Islamgaliev, R. K.; Kulyasova, O.
Abstract
In the present work, positron annihilation spectroscopy (PAS) is employed for microstructure investigations of various ultra fine grained (UFG) metals (Cu, Ni, Fe) prepared by severe plastic deformation (SPD), namely high-pressure torsion (HPT) and equal channel angular pressing (ECAP): Generally, UFG metals prepared using both the techniques exhibit two kinds of defects introduced by SPD: dislocations and small microvoids. The size of the microvoids is determined from the PAS data. Significantly larger microvoids are found in HPT deformed Fe and Ni compared to HPT deformed Cu. The microstructure of UFG Cu prepared by HPT and ECAP is compared and the spatial distribution of defects in UFG Cu samples is characterized. In addition, the mircrostructure of a pure UFG Cu prepared by HPT and HPT deformed Cu+Al2O3 nanocomposite (GlidCop) is compared.
Keywords: PAS
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Lecture (Conference)
Fourth International Conference on Materials Structure and Micromechanics of Fracture (MSMF-4), 23.-25.06.2004, Bro, CZ
Permalink: https://www.hzdr.de/publications/Publ-9903
Photoluminescence of Er doped SiO2 films embedded Si nanoclusters using dual implantation chamber and annealing
Cheng, X. Q.; Sun, J. M.; Kögler, R.; Skorupa, W.; Möller, W.; Prucnal, S.; Zuk, J.
Abstract
The photoluminescence of Er doped SiO2 films embedded Si nanoclusters is investigated. These clusters are fabricated by dual ion implantation and annealing.
Keywords: Er doped Si nanoclusters; photoluminescence; dual ion implantation
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Lecture (Conference)
5th Int. Conf. on Ion Implantation and other Applications of Ions and Electrons (ION2004), 14.-17.06.2004, Kazimierz Dolny, Poland
Permalink: https://www.hzdr.de/publications/Publ-9902
Potential energy retention of slow highly charged Ar-ions in chemical clean silicon surfaces
Kost, D.; Facsko, S.
Abstract
A UHV device with a base pressure of p<10^-9 mbar was connected to the ECR ion source of the Forschungszentrum Rossendorf for improved calorimetric measurements of the retention of the potential energy of highly charged ions. The chemical state of the target surface is controlled by AES using LEED optics. With a clean silicon and gold surface prepared by sputtering using Ar-ions, the retained energy of Ar^q+ (q = 1 up to 9) ions was determined at kinetic energies between q*60 eV and q*200 eV . By extrapolation to zero kinetic energy, the retained fraction of the potential energy is obtained, which is related to the full potential energy given by the ionization potentials. The potential energy retention coefficient results as (0.8 up to 0.9) +- 0.2 and decreases weakly with increasing charge state. This is about three times larger than earlier results with contaminated copper surfaces.
Keywords: highly charged ions; potential energy retention
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Lecture (Conference)
DPG-Frühjahrstagung, 08.-12.03.2004, Regensburg, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9901
Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Wu, H. S.; Brauer, G.; Anwand, W.; Skorupa, W.
Abstract
Deep level defects in He-implanted n-6H-SiC are studied by deep level transient spectroscopy.
Keywords: deep levels; SiC; defects; DLTS; ion implantation
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Lecture (Conference)
Materials Research Society (MRS), 2004 Spring Meeting, 12.-16.04.2004, San Francisco/ CA, USA
Permalink: https://www.hzdr.de/publications/Publ-9900
Structures of actinide complexes: combining DFT calculations, EXAFS spectroscopy, and thermodynamic speciation
Tsushima, S.; Hennig, C.; Ikeda, A.; Rossberg, A.; Scheinost, A.
Abstract
Density functional theory (DFT) calculations in combination with the polarizable continuum model (PCM) are a very useful method for obtaining the structure of actinide complexes in aqueous solution. The accuracy in energy, however, is often not sufficient to find a definite answer on whether ligands are coordinated in monodentate or bidentate fashion [1], pinpointing the limitations of working solely with theoretical calculations. Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful experimental method for the determination of structures of aqueous complexes; the limitation is, however, a relatively poor distal resolution and often no information on the spatial orientation, making the resolution of co-existing species difficult. Finally, thermodynamic calculations also do not always provide accurate information.
Therefore, we combined all three methods, DFT, EXAFS, and thermodynamic speciation, to study the speciation and structure of actinide complexes in aqueous solution. We will show examples of uranyl(VI) ligation towards water, carbonate, and sulfate. We will also address the formation of polymeric complexes.
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Invited lecture (Conferences)
American Chemical Society 234th National Meeting, Symposium: Computational Actinide and Transactinide Chemistry: Progress and Perspectives, 19.-23.08.2007, Boston, United States
Permalink: https://www.hzdr.de/publications/Publ-9899
Uranium redox chemistry and its importance in nuclear waste disposal
Tsushima, S.; Hennig, C.; Ikeda, A.; Scheinost, A.
Abstract
For the safety assessment of geological disposal of spent nuclear fuels, to predict and prevent migration of uranium in the geo-sphere is very important. Uranium can take oxidation states IV, V, and VI in aqueous solution. Its solubility differ several orders of magnitude depending on its oxidation state, but also depends strongly on pH and Eh of the solution and concentrations of co-existing organic/inorganic ligands. In this study, quantum chemical methods (MP2, CASPT2) were used to estimate the redox potential of the U(VI)/U(V) couple and the result was compared with experimental data. Similarly, An(VI)/An(V) redox potentials were also calculated for An = Np, Pu, and Am, and the importance of multi-configurational calculations and the role of spin-orbit effect were discussed.
Uranium may coordinate with various organic/inorganic ligands, and this is also a determining factor of the redox potential. We studied the complexation of uranium(VI) with several inorganic ligands (sulfate, carbonate, etc.) by DFT calculations and also by electrochemistry experiments. The structures of uranium complexes were characterized using EXAFS (extended X-ray absorption fine structure) spectroscopy at the Rossendorf Beamline, European Synchrotron Radiation Facility, in Grenoble, France. DFT and EXAFS were found to provide complementary structural information.
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Invited lecture (Conferences)
American Chemical Society 234th National Meeting, Symposium: Computational Electrochemistry for New Energy, 19.-23.08.2007, Boston, United States
Permalink: https://www.hzdr.de/publications/Publ-9898
RBS with high depth resolution using a small magnetic spectrometer
Grötzschel, R.; Klein, C.; Mäder, M.
Abstract
Rutherford Backscattering Spectrometry ( RBS) and Elastic Recoil Detection Analysis (ERDA) are well established techniques for quantitative thin film and surface analysis. The advantage of these methods consists in the simple physics they are basing on, namely the stopping of energetic ions in matter and the binary scattering of at the Coulomb potential of atomic nuclei.
In particular RBS with He ions is widely used at many small accelerators utilizing standard surface barrier or implanted silicon detectors with typical depth resolution values of 12 keV, which provides a depth resolution in the order of 10 nm.
The increasing importance of ultra-thin layers for novel technologies demands quantitative analysis techniques with a depth resolution of atomic monolayers, which can be obtained for RBS and ERDA by magnetic spectrometers only.
We operate at the 3 MV Tandetron accelerator a magnetic spectrometer consisting of an UHV scattering chamber and a simple magnet with circular field boundaries (Browne-Buechner spectrometer). Since in many cases of high resolution IBA the samples must be prepared in situ in UHV, the chamber with a base vacuum of 4x10-10 mbar is equipped with an Ar ion sputter gun and two OMICRON EFM3 low rate e-beam evaporators for in situ layer deposition.
A RHEED system is used to check the surface reconstruction and monitor the layer growth. Samples are transferred, together with a BN heater, to the precision 5-axes channelling goniometer . The magnet with a mean radius of 0.65 m is mounted vertically and can be positioned either at 35.5° or 144.5°. The backward position offers the advantage of a high mass resolution, but the Rutherford cross sections are a factor of about 100 lower than at the forward angle, which is the preferred position if kinematically possible.
Using a two-dimensional position sensitive focal plane detector the transversal position provides the possibility for kinematical corrections since the transversal focusing of the magnet is small. A multiple-pad PSD with a pitch of 4 mm is adequate.
This spectrometer is described, recent applications are discussed and as well as he influence of charge state transitions of ions on the obtainable depth resolution will be demonstrated.
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Invited lecture (Conferences)
14th Hellenic Symposium on Nuclear Physics, 21.-23.05.2004, Athens, Greece
Permalink: https://www.hzdr.de/publications/Publ-9897
Depth profiling of defects using a slow positron beam
Brauer, G.
Abstract
The fundamentals of and recent results on depth profiling of defects in materials by means of a slow positron beam are reported.
Keywords: depth profiling; defects; positron beam; PAS
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Lecture (Conference)
35th Polish Seminar on Positron Annihilation, 20.-24.09.2004, Turawa, Polska
Permalink: https://www.hzdr.de/publications/Publ-9896
AFM characterization of 6H-SiC surfaces after ion implantation and annealing
Brauer, G.; Brandstetter, S.; Teichert, C.; Anwand, W.; Skorupa, W.
Abstract
6H-SiC surfaces after ion implantation and annealing are characterized by AFM.
Keywords: AFM; SiC surface; ion implantation; annealing
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Lecture (Conference)
18th International conference on the application of accelerators in research and industry (CAARI2004), 10.-15.10.2004, Ft. Worth/TX, USA
Permalink: https://www.hzdr.de/publications/Publ-9895
The prototype of the new flash lamp apparatus: experiences, results, comparison old and new equipment
Anwand, W.
Abstract
The prototype of the new flash lamp apparatus is discussed and compared with the old equipment. First experiences and results are reported.
Keywords: flash lamp annealing; semiconductor processing
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Lecture (others)
EU-Projekttreffen FLASiC, 15.10.2004, Ilmenau, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9894
Chiral Condensate and Open Charm
Kämpfer, B.
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Invited lecture (Conferences)
CBM-Meeting, 15.-16.12.2005, Darmstadt, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9893
Primordiale Nukleosynthese
Kämpfer, B.
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Lecture (Conference)
IKTP, 10.11.2005, Dresden, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9892
QCD matter within quasi-particle model and the critical end point
Kämpfer, B.
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Lecture (Conference)
Quark Matter 2005, 04.-09.08.2005, Budapest, Hungary
Permalink: https://www.hzdr.de/publications/Publ-9891
Konzeption und prototypische Realisierung einer Datenbankanwendung für die Verwaltung von Betriebsparametern von Ionenstrahlbeschleunigern
Kunze, P.
Abstract
Es wird beschrieben, wie eine Datenbank für Betriebswerte eines Teilchenbeschleunigers aufgebaut wurde. Der Schwerpunkt der Betrachtungen liegt dabei auf der Theorie zum Aufbau einer solchen Datenbank.
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Other report
Dresden: HTW Dresden, Diplomarbeit, 2005
50 Seiten
Permalink: https://www.hzdr.de/publications/Publ-9890
Open charm and leptons at RHIC
Kämpfer, B.
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Lecture (Conference)
ECT* - Electromagnetic probes of hot and dense matter, 03.-11.06.2005, Trento, Italy
Permalink: https://www.hzdr.de/publications/Publ-9889
Quasi-particle description of QCD matter
Kämpfer, B.
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Lecture (Conference)
Probing QCD with High Energy Nuclear Collisions, 16.01.2005, Hirschegg, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-9888
Digitalisierung der Signalverarbeitung eines Rotorvoltmeters
Arnold, S.
Abstract
Das Ziel der Diplomarbeit war, auf Basis eines 32-Bit Mikrocontrollers wesentliche Teile der Signalverarbeitung eines Rotorvoltmeters von analoger Schaltungstechnik in eine digitale Verarbeitung zu überführen. Mit diesem Schritt kann das am Institut für Ionenstrahlphysik und Materialforschung des FZR eingesetzte Rotorvoltmeter eines Van-de-Graaff-Ionenbeschleunigers in seiner Anwendung wesentlich verbessert werden. Erwartet werden neben der einfacheren Parametrierung und der erhöhten Flexibilität des Gerätes vor allem auch eine Erhöhung der Stabilität im Betrieb durch den Wegfall von Drifterscheinungen analoger Schaltungstechnik.
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Other report
Chemnitz: TU Chemnitz, Diplomarbeit, 2006
50 Seiten
Permalink: https://www.hzdr.de/publications/Publ-9887
Digitalisierung der Funktion eines Meßgerätes zur Bestimmung der Beschleunigungsspannung von Van-de-Graaff-Ionenbeschleunigern
Voigtländer, G.
Abstract
Das Ziel der Diplomarbeit war, auf Basis eines 32-Bit Mikrocontrollers wesentliche Teile der Signalverarbeitung eines Rotorvoltmeters von analoger Schaltungstechnik in eine digitale Verarbeitung zu überführen. Mit diesem Schritt kann das am Institut für Ionenstrahlphysik und Materialforschung des FZR eingesetzte Rotorvoltmeter eines Van-de-Graaff-Ionenbeschleunigers in seiner Anwendung wesentlich verbessert werden. Erwartet werden neben der einfacheren Parametrierung und der erhöhten Flexibilität des Gerätes vor allem auch eine Erhöhung der Stabilität im Betrieb durch den Wegfall von Drifterscheinungen analoger Schaltungstechnik.
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Other report
Dresden: HTW Dresden, Diplomarbeit, 2004
50 Seiten
Permalink: https://www.hzdr.de/publications/Publ-9886
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