Doping and defects in semiconductor materials
Ion beam processing and related annealing methods are used for basic and applied studies to modify the electrical, optical and magnetic properties of semiconductor materials in a systematic manner. The work is focused on the correlation between microstructure modification on the atomic scale, i.e. the formation of clusters consisting of impurities and point defects, and the changed materials properties as well as the resulting engineering problems. Because many of the relevant processes occur during a very short time and/or in a very small volume it is often difficult to explore them experimentally. Therefore atomistic computer simulations are performed in close contact with experimental activities. Their general goal is a better understanding of ion beam- and defect-induced processes on the atomic scale.
- Doping and defect formation/annealing in Si, Ge, SiC, diamond, and ZnO with the special focus on the use of flash lamp annealing
- Formation and optimisation of Si-based light emitters (in collaboration with the research topic „Optoelectronic Materials“)
- Magnetic doping of semiconductor materials (in collaboration with the research topic „Nanoscale Magnetism“)
A key function during the experiments regarding electrical and magnetic doping as well as defect engineering plays the – unique at FZD - availability of flash lamp annealing for the time duration range 0.5-20 ms.
Also unique at FZD is an apparatus allowing simultaneous two-beam ion implantation in a synchronous mode to explore new ion beam induced effects.