Doping of SiC using ion implantation

Silicon carbide (SiC) is a semiconductor with outstanding properties for applications in high temperature, high power and high frequency electronics. To obtain the wanted electrical properties dopant atoms must be introduced and activated. Because of the extremely low atomic mobilities in SiC ion implantation is the only possible way for selective doping. The electrical activation of the implanted ions and the annealing of the implantation induced damage depend on the implantation temperature and the annealing conditions. Therefore, fundamental studies of ion implantation doping of SiC are necessary.



Development and optimization of ion doping processes for SiC including high dose implantation of Al, B, N at high temperatures and following high temperature annealing. Furthermore the correlation between radiation damage and electrical properties is investigated.