Characterization Methods

Electrical measurements:

  • Temperature dependent resistivity
  • Temperature dependent Hall effect
  • Spreading resistance profiling
 

Radiation damage and structural properties:

  • Rutherford backscattering spectrometry with channeling (RBS/C)
  • Cross sectional transmission electron microscopy (XTEM)
  • RAMAN spectroscopy
  • Secondary Ion Mass Spectrometry (SIMS (in cooperation) )
 

Equipment:

  • Implanter (20kV ... 500 kV) with heating stage which allows hot implantation up to temperatures of 1500oC.
  • High temperature furnace  (RF heating) for annealing up to 2000oC in vacuum or in gas ambient (Ar, N2).
  • Flash lamp annealing device with maximum energy density of 150 J/cm2 with pulse duration of 20 ms.