Boron ion implantation
Dependence on implanted boron concentration [1,2]
- Limited carrier concentration due to Ostwald ripening, formation of precipitates and outdiffusion.
- No remarkable B diffusion after flash lamp annealing at about 2000°C.

References
[1] D. Panknin, W. Skorupa, H. Wirth, M. Voelskow, A. Mücklich,
W. Anwand, G. Brauer, O. Gonzales-Varona, A. Perez-Rodriguez, J.M. Morante,
Solid State Phenomena 69-70 (1999) 391
[2] D. Panknin, H. Wirth, A. Mücklich, W. Skorupa;
submitted to J. Appl. Phys