Summary
Semiconductor Nanoclusters: Ge vs. Si
Germanium:
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structures containing interface clusters show a larger programming window
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programming already possible at small programming voltages
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retention time is relatively short
Silicon:
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for smaller progr. voltages (E < 4 MVcm-1) memory effect
relatively small
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prog. window at higher fields comparable to Ge based structures
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good retention characteristics
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microstructural properties are still under investigation
still open questions / ongoing investigations:
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Where exactly is the charge stored ? (bulk or interface clusters
/ traps)
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Can we adjust the interface cluster band ?
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How does the microstructure of the Si implanted layers look like
?
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