Formation and evolution of implantation-induced defects in semiconductors



 

prediction of the morphology of the as-implanted damage in Si:

application of a novel combination of computer simulations based on the binary collision approximation and molecular dynamics calculations
 
 

modeling of impurity gettering in Si by ion implantation induced defects:

an explanation of the so-called "Rp/2" effect
 

 

 
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