Publications + Patents

    1990

    1. L. Bischoff, T. Chudoba and F.K. Naehring
    On mask repair with focused ion beam
    Physical Research 13 (1990) 423 – 426

    1991

    2. L.Bischoff; E.Hesse; D.Janssen; F.K.Naehring; F.Nötzold; G.Schmidt and  J.Teichert
    Focused ion beam system with high current density
    Microelectronic Engineering 13 (1991) 367 - 370

    1992

    3.  J. Teichert and D. Janssen
    Time of flight corrected beam blanker for ion beam lithography systems
    Optik 91 (1992) 46

    1993

    4. J. Teichert and M.A. Tiunov
    Achromatic two?stage ExB mass filter for a focused ion beam column with collimated beam
    Meas. Sci. Technol. 4 (1993) 754?763

    5. E. Hesse and  F.K. Naehring
    Narrow emission from a lithium liquid metal ion source
    J. Phys. D: Appl.Phys. 26  (1993)  717 - 719

    6. J. Teichert and M.A. Tiunov
    Design of an achromatic mass separator for a focused ion beam system
    Proc. of the SPIE, Vol. 2014 Charged?Particle Optic  (1993) 85

    7. L.Bischoff, E.Hesse, G.Hofmann, F.K.Naehring, W.Probst, B. Schmidt, and J.Teichert
    High current FIB system for micromechanics application
    Microelectronic Engineering 21 (1993) 197 - 200

    1994

    8. E. Hesse, F.K. Naehring and J. Teichert
    A lithium liquid metal ion source with a narrow angle emission for writing beam lithography
    Microelectronic Engineering 23 (1994) 111 - 114

    9. E.Hesse, L.Bischoff and J.Teichert
    Development of a cobalt liquid alloy ion source
    J. Phys. D: Appl. Phys. 27  (1994)  427 - 428

    10. J. Teichert, L. Bischoff, E. Hesse, D. Panknin and W. Skorupa
    Formation of CoSi2 wires by maskless implantation with the focused ion beam
    Mat. Res. Soc. Symp. Proc. 316  (1994) 741- 746  and 320  (1994) 153 - 158

    11. L. Bischoff, J.Teichert, E.Hesse, D.Panknin and W.Skorupa
    Writing implantation with a high current focused ion beam to form CoSi2 ? microstructures
    J. Vac. Sci. Technol. B 12 (1994) 3523 - 3527

    12. L. Bischoff, E. Hesse, D. Panknin, W. Skorupa, and J. Teichert
    Writing implantation with a high current density focused ion beam
    Microelectronic Engineering 23 (1994) 115 - 118

    1995

    13. L. Bischoff, J. Teichert and E. Hesse
    Interconnection lines following the surface topography fabricated by writing focused ion beam   implantation
    Microelectronic Engineering 27 (1995) 351 - 354

    14. J. Teichert, L. Bischoff,  E.Hesse, P. Schneider, D. Panknin, T. Geßner, B. Löbner, and  N. Zichner,
    Comparision of CoSi2 Interconnection Lines on Crystalline and Non-crystalline Silicon Fabricated by
    Writing Focused Ion Beam Implantation,
    Applied Surfaces Science  91  (1995)  44 - 49

    15. E. Hesse, L. Bischoff and  J. Teichert
    Angular distribution and energy spread of a lithium liquid metal ion source
    J. Phys. D: Applied Physics;  28  (1995)  1707 - 1709

    16. L. Bischoff, J. Teichert, E. Hesse, D. Panknin and W. Skorupa,
    Ion Beam Synthesis of CoSi2-Microstructures by Means of a High Current Focused Ion Beam
    Proc. Int Conf. on Ion Beam Modification of Materials, Canberra, Australia
    5 - 10 February 1995, p. 933 - 936

    1996

    17. L. Bischoff, K.-H. Heinig, J. Teichert and W. Skorupa,
    Submicron CoSi2 Structures Fabricated by Focused Ion Implantation and Local Flash Lamp Melting
    Nucl Instr. & Methods in Phys. Res. B 112 (1996) 201 - 205

    18. L. Bischoff, J. Teichert, E. Hesse, P.D. Prewett and J.G. Watson
    Cluster beams from a Co-Nd liquid alloy ion source
    Microelectronic Engineering 30 (1996) 245 - 248

    19. P. Schneider, L. Bischoff, J. Teichert and E. Hesse
    Focused Ion Beam Sputtering Yield Measurements for Cobalt Ions on Silicon and Related Materials
    Nucl Instr. & Methods in Phys. Res. B 117 (1996) 77 - 80

    20. J. Teichert, L. Bischoff,  E.Hesse, P. Schneider, D. Panknin, T. Geßner, B. Löbner, and  N. Zichner,
    Cobalt Disilicide Interconnects for Micromechanical Devices,
    Journal of Micromechanics and Microengineering, 6 (1996) 272 - 278

    21. W. Driesel, Ch. Dietzsch, E. Hesse, L. Bischoff, and J. Teichert
    In situ Observation of the Tip Shape of Co-Ge Liquid Alloy Ion Sources in a High Voltage Transmission  Electron Microscope
    J. Vac. Sci. Technol. B 14 (3) (1996) 1621 - 1629

    22. E. Hesse, G.L.R. Mair, L. Bischoff  and  J.Teichert
    Parametric Investigation of  Current Pulses in a Liquid Metal Ion Emitter
    J. Phys. D: Appl. Phys. 29 (8) (1996)  2193 - 2197

    23. E. Hesse, W. Driesel, Ch. Dietzsch, L. Bischoff and J. Teichert
    Shape of a Co-Nd Liquid Alloy Ion Source
    Jpn. J. Appl. Phys. 35 (10) (1996) 5564 - 5570

    24. J. Teichert, L. Bischoff and B. Köhler
    Evidence for acoustic waves induced by focused ion beams
    Appl. Physics Letters, 69 (11) (1996) 1544 - 1546

    25. J. Teichert, L. Bischoff and B. Köhler
    Investigation of the ion acoustic effect during focused ion beam irradiation
     Nucl Instr. & Methods in Phys. Res. B 120 (1996) 311 - 314

    1997

    26. B. Schmidt, L. Bischoff, J. Teichert
    Writing FIB Implantation and Subsequent Anisotropic Wet Chemical Etching for Fabrication of 3D Structures in Silicon
    Sensors and Actuators; A61  (1997)  369-373

    27. J. Teichert, L. Bischoff, S. Hausmann
    Fabrication of MSM detector structures on silicon by focused ion beam implantation
    Microelectronic  Engineering;  35  (1997)  455-458

    28. L. Bischoff and J. Teichert
    Application of highly focused ion beams
    Proc. of Int. Symp. Materials Science Applications of Ion Beam Techniques,
    Seeheim, Sept. 9-12, 1996,Trans. Tech. Publications, Materials Science Forum Vol. 248/249 (1997) 445 - 450,  ed. A. G. Balogh and G. Walter

    29. L. Bischoff and J. Teichert
    Application of highly focused ion beams
    Proc. 14th Int. Conf. Application of Accelerators in Research and Industry, AIP Conf. Proc.
    Vol. 392, ed. J.L. Duggan and I. L. Morgan, AIP Press, New York 1997, p. 1175 - 1178

    30. J. Teichert, L. Bischoff and B. Köhler
    Study of the ion-acoustic effect with focused ion beams
    Mat. Res. Soc. Symp. Proc. Vol. 438 (1997) 555 - 560

    1998

    31. S. Hausmann, L.Bischoff, J. Teichert, D. Grambole, F. Hermann, and W. Möller
    Investigation of dwell-time effects on the cobalt disilicide formation using focused ion beam implantation
    Microelectronic  Engineering, 41/42 (1998) 233 - 236

    32. J. Teichert, M. Voelskow, L. Bischoff, and S. Hausmann;
    RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation
    Vacuum 51 (2) (1998) 261 - 266

    33. J. Teichert, L. Bischoff, and S. Hausmann;
    Ion beam synthesis of  cobalt disilicide using focused ion beam implantation
    J. Vac. Sci. and Technol. B16 (4) (1998) 2574 - 2577

    34. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, D. Grambole, F. Herrmann,
    and W. Möller
    Damage-related dwell-time effects in focused ion beam synthesis of cobalt disilicide
    Applied Physics Letters,72 (21) (1998) 2719-2721

    35. L. Bischoff and J. Teichert,
    Focused Ion Beam Sputtering of Silicon and Related Materials
    Report FZD - 217, März 1998

    36. T. Ganetsos, D. Tsamakis, D. Panknin, G.L.R. Mair, J. Teichert, L. Bischoff  and C. Aidinis,
    Si x-1 Ge x structures fabricated by focused ion beam implantation
    Journal de Physique, IV 8 : P3 (1998) 109 - 112

    1999

    37. L. Bischoff, S. Hausmann,  M. Voelskow and J. Teichert,
    Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2
    Nucl Instr. & Methods in Phys. Res. B147 (1999) 327 - 331

    38. S. Hausmann, L. Bischoff, M. Voelskow, J. Teichert, W. Möller and H. Fuhrmann,
    Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements
    Nucl Instr. & Methods in Phys. Res. B148 (1- 4) (1999) 610 - 614

    39. W. Knapp, L. Bischoff and J. Teichert,
    Electron emission characteristics of solidified gold alloy liquid metal ion sources
    Applied Surface Science, 146 (1999) 134 - 137

    40. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, and W. Möller
    Single-Crystalline CoSi2 Layer Formation by Focused Ion Beam Synthesis
    Int. Microprocesses and Nanotechnology Conf.,Yokohama, Japan, July 6-8 , 1999
    Jap. J. Appl. Phys., Part 1, 38 (12B) (1999) 7148

    41. J. Martin, R. Wannemacher, J. Teichert, L. Bischoff, and B. Köhler
    Generation and detection of fluorescent color centers in diamond with submicron resolution
    Appl. Phys. Lett. 75 (20) (1999) 3096 - 3098

    2000

    42. L.Bischoff, J.Teichert, S.Hausmann, T. Ganetsos,  and G.L.R. Mair
     Investigation and optimization of the emission parameters of alloy liquid metal ion sources
    Int. Conf. on Ion Beam Analysis, IBA-14; Dresden July 26.-30., 1999
    Nucl Instr. Meth in Phys. Res. B 161-163 (2000) 1128 – 1131.

    43. L.Bischoff, J.Teichert , S.Hausmann , T. Ganetsos  and G.L.R. Mair
     Temperature and energy spread investigations of alloy LMIS
     Int. Conf. on Micro-and Nano Engineering, MNE`99, Rome, Italy, Sept.20-24, 1999
     Microelectronic Engineering, 53 (2000) 613 - 616

    44.  J. Teichert, L. Bischoff, S. Hausmann, M. Voelskow and H. Hobert
    Micro- Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation
    Appl. Phys A 71 (2000) 175 - 180

    45. S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, and W. Möller
    Dwell-time related effects in focused ion beam synthesis of cobalt disilicide
    J. Appl. Phys. 87 (1)  (2000) 57 - 62

    46. L.Bischoff, J.Teichert, Th.Ganetsos and G.L.R.Mair
    Temperature Dependence of the Electric Characteristics of Liquid Metal Alloy Ion Sources
    12th Int. Vacuum Microelectronics Conf. IVMC `99, Darmstadt, Juli 6.-9.,1999
    J. Vac. Sci. and Technol. B19 (1) (2001)  76 – 78

    47. L.Bischoff, Th.Ganetsos, J.Teichert, and G.L.R.Mair
    Temperature dependence of emission spectra of liquid metal alloy ion sources
    Int. Conf. on Ion Collisions in Solids, ICACS – 18, Odense, Denmark, August 3 – 8, 1999
    Nucl.  Instr. Meth. in Phys. Res. B164-165 (2000) 999 - 1003

    48.L.Bischoff, Th.Ganetsos, J.Teichert, D. Panknin and G.L.R.Mair
    Si 1-x Ge x microstructures produced by maskless ion implantation
    Proc. Int. Conf. on Ion Collisions in Solids, ICACS – 18, Odense, Denmark, August 3 – 8, 1999

    49. J. Teichert, H. Hobert, L. Bischoff, and S. Hausmann
    Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation
    Microelectronic Engineering 50 (1-4) (2000) 187 -  192

    50. J. Martin, L. Bischoff, J. Teichert, B. Köhler and R. Wannemacher
    Point Light Source for Near-Field Optical Microscopy
    DPG Tagungen 2000, Potsdam  13.03. – 16.03.00, CP 12.36
    Regensburg 27.03. – 31.03.00,  O  11.88

    51. L. Bischoff, J. Teichert, Th. Ganetsos, and G.L.R. Mair
    Temperature dependence of the electric characteristics of liquid metal alloy ion sources
    J. Phys. D: Appl. Phys. 33 (2000) 692 – 695

    52. L. Bischoff and J. Teichert
    Liquid metal ion source working with an Er70Fe22Ni5Cr3 alloy
    J. Phys. D: Appl. Phys. 33 (2000) L69 – L72

    53. GLR Mair, Th. Ganetsos, L. Bischoff, and J. Teichert
    Doubly-charged ions from liquid metal alloy ion sources: direct field-evaporation or post-ionization ?
    J. Phys. D: Appl. Phys. 33 (2000) L86– L89

    2001

    54. L. Bischoff, J. Teichert, and S. Hausmann
    Dose rate dependence of irradiation damage in silicon
    E-MRS Spring meeting May 30 – June 2, 2000 Strasbourg, France
    Nucl Instr. Meth in Phys. Res. B178 (2001) 165 –169

    55. J. Martin, L. Bischoff , and R. Wannemacher
     Microscopy of Ion-Beam Generated Fluorescent Color Center Patterns in LiF
     Opt. Commun. 188 (1-4) (2001) 119 – 128.

    56. Ch. Akhmadaliev, L. Bischoff, J. Teichert, and K. Kazbekov
    Ion acoustic  microscopy for imaging of buried structures based on a focused ion beam
     Int. Conf. on Micro-and Nano Engineering, MNE`2000, Jena, Germany, Sept.18-21, 2000
     Microelectronic Engineering  57 – 58 (2001) 659 – 664.

    57. Th. Ganetsos, C. Aidinis, L. Bischoff, G. L. R. Mair, J. Teichert, D. Panknin and I. Papadopoulos
    Liquid metal ion source-produced germanium ions for maskless ion implantation
    J. Phys. D: Appl. Phys. 34 (2001) L 11 - L 13.

    58. C. J. Aidinis, G. L. R. Mair, L. Bischoff and I. Papadopoulos
    A study of the temperature dependence of the energy spread and energy deficit of a  Ge++ ion beam produced by a liquid metal alloy ion source
     J. Phys. D: Appl. Phys. 34 (2001) L 14 -L 16 .

    59. Ch. Akhmadaliev, L. Bischoff, J. Teichert, K. Kazbekov, and B. Köhler
    Ion Acoustic Microscopy for Imaging of Buried Structures Based on a Focused Ion Beam System
    DPG Tagungen 2001, Hamburg 26.03. – 30.03.00,   DS 17.4

    60. L.Bischoff, J.Teichert, Th.Ganetsos and G.L.R.Mair
    Effect of Temperature on the Electric Emission  Characteristics of Liquid Metal Alloy Ion Sources
    J. Vac. Sci. Technol. B19 (1) (2001)  76 – 78.

    61.M. Posselt, J. Teichert, L. Bischoff and S. Hausmann
    Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation
    Nucl Instr. Meth in Phys. Res. B178 (2001) 170 –175.

    62. M. Posselt, L. Bischoff and J. Teichert
    Influence of dose rate and temperature on ion-beam-induced defect evolution  in Si investigated by channeling implantation at different  doses
    Appl. Phys. Lett. 79 (10) (2001) 1444 – 1446.

    63. Th. Ganetsos, G. L. R. Mair and L. Bischoff,
    On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources
    IFES 2001, 47th International  Field Emission Symposium,  July 29 – Aug. 3, 2001, Berlin, Germany

    64. Ch. Akhmadaliev, L. Bischoff,  J. Teichert, and K. Kazbekov,
    Ion Acoustic Imaging of microstructures using a Focused Ion Beam system
    Proc of 3rd  Int. Conf. on Nuclear and  Radiation Physics, 4 – 7 June, 2001, Almaty, Republic of Kazakstan

    65. B. Köhler und L. Bischoff,
    Entwicklung einer neuen Technologie zur Probenpräparation für die Transmissions-Elektronen-mikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbeitung
    Abschlußbericht SMWK Projekt 7/2001 und FZD – Report  FZD-329,  August 2001

    66. Th. Ganetsos, G. L. R. Mair, L. Bischoff, J. Teichert and D. Kioussis,
    A study of liquid metal alloy ion sources for the production of ions of interest in the microelectronics industry
    Solid State Electronics 45 (2001) 1049 – 1054.

    67. L. Bischoff
    Der fokussierte Ionenstrahl in der Nanotechnologie
    DFG-Graduiertenkolleg Sensorik (GK 51)
    Technische Universität Dresden, 05.12.2001

    68. L. Bischoff  and  J.Teichert
    Writing Cobalt FIB Implantation into 6H:SiC
    Applied Surface Science  184  (2001) 336 – 339

    69. L.Bischoff, J.Teichert and V. Heera
    Focused Ion Beam Sputtering Investigations on SiC
    Applied Surface Science  184  (2001) 372 – 376

    70. L. Bischoff and J. Teichert
    Application of focused ion beams in materials research   (invited)
    12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
    Proceedings VEIT`01, 17-21 September, 2001 Varna, Bulgaria

    2002

    71. G.L.R. Mair, L. Bischoff, A.W.R. Mair, C.J. Aidinis, Th. Ganetsos, and C.A. Aleiev
    An in-depth investigation of the energy distribution of doubly-charged ions emitted from a Liquid Metal Alloy Ion Source
    J. Phys. D: Appl. Phys. 35 (2002) L 33 -L 36

    72. Ch. Akhmadaliev  and  L. Bischoff
    Investigation of elastic wave generation in a solid target by a pulsed ion beam
    DPG Tagungen 2002, Regensburg   March, 11 – 15, 2002, O 30.8

    73. L. Bischoff (invited)
    Application of mass separated focused ion beams
    IV Internat. Symposium on Ion Implantation and other Applications of Ions and Electrons,  ION2002
    June 10 – 13, 2002, Kazimierz Dolny, Poland

    74. GLR Mair, C.J. Aidinis, L. Bischoff, and Th. Ganetsos
     On the dynamics of liquid metal ion sources
     J. Phys. D: Appl. Phys. 35 (2002) 1392  - 1396

    75. M. Posselt, L. Bischoff, J. Teichert and A. Ster
    Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC studied by channeling implantation
    MRS Spring Meeting, Symposium F   Defect- and Impurity-Engineered Semiconductors and Devices III
    San Francisco, California , April 1 – 5, 2002, USA

    76. A. Travlos, N. Boukos, G. Apostolopoulos, C.J. Aidinis and L. Bischoff
    Epitaxial erbium silicide on Ge+ implanted silicon
    Nucl.  Instr. Meth. in Phys. Res. B 196 (2002) 174 - 179

    77. L. Bischoff
     Focused ion beams from alloy LMIS
     Institut of Solid State Physics and Institute of Electronics
     Sofia 19.04.2002

    78. L. Bischoff  (invited)
    Alternatuve Flüssigmetall-Ionenquellen
    LEO CrossBeam Workshop
    IFW Dresden, 14. - 16. 05. 2002

    79. L. Bischoff, B. Schmidt, K.-H. Heinig, T. Müller, and S. Hellwig
    Plasmonic structures fabricated by focused ion beams
    International Workshop on  Nanostructures for Electronics and Optics  - NEOP -
    Dresden, Germany, August 18 - 21, 2002

    80. G. Gorbunov, A.A. Levin, E. Wieser, L. Bischoff, D. Eckert, A. Mensch, M. Mertig, D.C. Meyer,
    H. Reuther, P. Paufler, and W. Pompe
    Formation and decomposition of laser-deposited metastable Fe – Cr phases
    International  Quantum Electronics Conference and Conference on Lasers Application and Technologies
    IQEC/LAT 2002, Moscow, Russia, June 22 – 28, 2002

    81. Posselt, M., Bischoff, L., Teichert, J., Ster, A.
    Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC
    Mat. Res. Soc. Symp. Proc. Vol. 719 (2002) F11.2.1 – F11.2.7

    82. C. Akhmadaliev, G.L.R. Mair, , C.J. Aidinis and L. Bischoff
    Frequency spectra and eletrohydrodynamic phenomena in a liquid gallium field ion emission source
    J. Phys. D: Appl. Phys. 35 (2002) L91 – L93.

    83. Akhmadaliev, Ch., Bischoff, L
    Analysis of microstructures using the ion-acoustic effect
    E-MRS 2002 Spring Meeting, June 18 – 21, 2002 , Strasbourg, France

    84. D. Späth, H. Tritschler, L. Bischoff and W. Schulz,
    Micromilling – High Potential Technology for  Micromechanical Parts
    Proceedings of the 6th  International Conference  on Advanced Manufacturing Systems and Technology, AMST 02,  June 20 – 21, Udine, Italy

    85. J. Schmidt, H. Tritschler and L. Bischoff,
    Improvement of Micro End Milling Tools through Variation of Tool Manufacturing  Method and Geometry
    Proceedings of the International  Conference on Micro and Nano Systems,  ICMNS2002
    August 11 – 14, (2002) Kumning, China

    86. L. Bischoff, B. Schmidt, K.-H. Heinig, T. Müller, S. Hellwig
    Plasmonic Structures Fabricated by Focused Ion Beams
    International Workshop on nanostructures for Electronics and Optics –NEOP-
    October 6 – 9, (2002) Dresden, Germany

    87. L. Bischoff, GLR Mair, C.J. Aidinis, and Th. Ganetsos
    Fundamental properties of erbium-ions-producing liquid metal alloy ion sources
    Nucl.  Instr. Meth. in Phys. Res. B 197 (2002) 282 - 287

    2003

    88. L. Bischoff,  J. Teichert, S. Kitova and T. Tsvetkova
    Optical pattern formation in a-SiC:H films by Ga+ ion implantation
    12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
    17-21 September, 2001 Varna, Bulgaria
    Vacuum 69 (1-3) (2003) 73 - 77

    89. Ch. Akhmadaliev, L. Bischoff,  J. Teichert, and K. Kazbekov
    Ion acoustic microscopy based on IMSA-100 focused ion beam system
    12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
    17-21 September, 2001 Varna, Bulgaria
    Vacuum, 69 (1-3) (2003) 431 - 435

    90. W. Knapp, L. Bischoff and J. Teichert
    Solidified Liquid Metal Ion Source – Formation of a Nanoemitter
    12th International School on Vacuum, Electron and Ion Technologies, VEIT`01
    17-21 September, 2001 Varna, Bulgaria
    Vacuum 69 (1-3) (2003) 345 - 349

    91. Th. Ganetsos, GLR Mair and L. Bischoff
    On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources
    Ultramicroscopy  95  (2003) 171 – 181

    92. W. Leitenberger, H. Wendrock,  L. Bischoff, T. Panzer, U. Pietsch, J. Grenzer and A. Pucher
    Double pinhole diffraction of white synchrotron radiation
    7th International Conference on Surface X-Ray and Neutron Scattering
    September 23-27, 2002, Lake Tahoe, California,  USA
    Physica B (submitted)

    93. Ch. Akhmadaliev, L. Bischoff, GLR. Mair, CJ. Aidinis, Th. Ganetsos and M. Anagnostakis
    Temperature dependence of emission frequency spectra of a liquid metal anode
    J. Phys. D: Applied Physics 36 (2003) L18 – L20

    94. J. Seidel, S. Grafström, L. Eng, and L. Bischoff
    Surface plasmon transmission across narrow grooves in thin silver films
    Appl. Phys. Lett. (accepted)

    95. L. Bischoff, GLR Mair, C.J. Aidinis, and Th. Ganetsos
    Erbium ions from a liquid Metal Ion Source for optoelectronic applications
    J. Phys. D: Appl. Phys. (submitted)

    96. L. Bischoff and B. Schmidt
    Low capacitance point diodes fabricated with focused ion beam implantation
    Solid State Electronics (accepted, Ref.-Nr. 02-45)

    97. M. Posselt, L. Bischoff , J. Teichert and A. Ster
    Dose rate and temperature dependence of  ion-beam-induced defect evolution in Si and SiC: Influence on the shape of channeling implantation profiles
    J. Appl. Phys. 93 (2) (2003) 1004 - 1013

    98. GLR. Mair, Ch. Akhmadaliev, L. Bischoff, Th. Ganetsos, C.J. Aidinis and E.A. Anagnostakis
    The effect of electrode geometry on the current fluctuations and emission frequency spectra in a liquid metal ion emitter
    J. Phys. D: Appl. Phys. (submitted)

    99. L. Bischoff, B. Schmidt, K.-H. Heinig, T. Müller, S. Hellwig
    Plasmonic Structures Fabricated by Focused Ion Beams
    Vorbereitungstreffen des DFG-Schwerpunktes „Nanodrähte und Nanoröhren“
    MPI für Mikrostrukturphysik, Halle 17.01.2003

       

    Patents

      J. Teichert and E. Hesse
      Flüssigmetallionenquelle zur Emission von Kobaltionenstrahlen
      Deutsches Patent DE 4312028 A1 (1994)
      Europäisches Patent 94105227.6 (1994)

      B. Köhler, L. Bischoff and J. Teichert
      Vorrichtung und Verfahren zur gezielten Probenbearbeitung, vorzugsweise von Halbleiterbauelementen, mittels einer Ionen-Feinstrahlanlage
      Patentanmeldung 196.06.479.3 (1996)

      B. Schmidt, L. Bischoff, L. Eng,
      Verfahren zur Herstellung von integrierten Abtastnadeln
      Patent: DE 100 57 656 C1 (2000)
      Patent: EP 1 209 689 A2

      T. Tsvetkova, L. Bischoff, J. Teichert,
      Schichtmaterial für optische Informationsträger und Lichtmasken sowie Verfahren zur Herstellung des Schichtmaterials
      Patentanmeldung  AZ 101 43 616.5 06.09 (2001)

 
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